ISAHAYA ISA1530AC1

〈SMALL-SIGNAL TRANSISTOR〉
ISA1530AC1 ISA1603AM1
.
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
For small type machine low frequency voltage
amplify application.
0.3
①
②
③
0.7
2.0
1.3
0.65 0.65
0.9
③
0.16
APPLICATION
①
②
2.1
0.425 1.25 0.425
0.5
0.8
・Small collector to emitter saturation voltage
VCE(sat)=-0.3Vmax
2.5
1.5
ISA1603AM1
0.4
2.9
1.90
0.95 0.95
・Excellent linearity of DC forward current gain.
0.5
1.1
FEATURE
ISA1530AC1
0.15
ISA1530AC1 ISA1603AM1 is super mini
package resin sealed silicon PNP epitaxial type
transistor.
These are designed for low frequency voltage
amplify application .
UNIT:mm
0~0.1
0~0.1
JEITA:SC-59
JEDEC:TO-236 resemblance
JEITA:SC-70
JEDEC:-
TERMINAL CONNECTOR
①:BASE
②:EMITTER
③:COLLECTOR
TERMINAL CONNECTOR
①:BASE
②:EMITTER
③:COLLECTOR
MAXIMUM RATINGS(Ta=25℃)
Symbol
Parameter
VCBO
VEBO
VCEO
I C
PC
Tj
Tstg
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
ISA1530AC1 ISA1603AM1
-60
-6
-50
-150
200
+150
-55~+150
MARKING
UNIT
V
V
V
mA
mW
℃
℃
. TR
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
V(BR)CEO
I CBO
I EBO
hFE*
hFE
VCE(sat)
fT
Cob
NF
Parameter
Collector to Emitter Breakdown voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
Collector to Emitter saturation voltage
Gain bandwidth product
Collector output capacitance
Noise figure
Test conditions
I C=-100μA,RBE=∞
VCB=-60V,I E =0
VEB=-4V,I C =0
VCE=-6V,I C =-1mA
VCE=-6V,I C =-0.1mA
I C =-100mA,I B =-10mA
VCE=-6V,I E =10mA
VCB=-6V,I E =0,f=1MHz
VCE=-6V,I E =0.3mA
f=100Hz,RG=10kΩ
*:It shows hFE classification in below table.
hFE
Min
-50
Limits
Ave
-0.1
-0.1
560
120
70
Q
120~270
Max
-0.3
200
4.0
20
R
180~390
UNIT
V
μA
μA
-
-
V
MHz
pF
dB
S
270~560
〈SMALL-SIGNAL TRANSISTOR〉
ISA1530AC1 ISA1603AM1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
COLLECTOR DISSIPATION VS AMBIENT TEMPERATURE
GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT
400
VCE=-6V
GAIN BAND WIDTH PRODUCT fT[MHz]
COLLECTOR DISSIPATION Pc[mW]
200
150
100
50
300
200
100
0
0
0
50
100
0.1
150
1
10
100
EMITTER CURRENT IE[mA]
AMBIENT TEMPERATURE Ta[℃]
DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
1000
100
COLLECTOR OUTPUT CAPACITANCE Cob[pF]
DC FORWARD CURRENT GAIN hFE
VCE=-6V
100
10
-0.1
-1
-10
-100
-1000
COLLECTOR CURRENT IC[mA]
10
1
0
-0.1
-1
COMMON EMITTER TRANSFER
-50
VCE=-6V
COLLECTOR CURRENT IC[mA]
-40
-30
-20
-10
-0
-0.0
-0.2
-0.4
-0.6
-0.8
-10
COLLECTOR TO BASE VOLTAGE VCB[V]
-1.0
BASE TO EMITTER VOLTAGE VBE[V]
ISAHAYA ELECTRONICS CORPORATION
-100
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
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Jan.2007