〈SMALL-SIGNAL TRANSISTOR〉 ISA1989AU1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(ULTRA SUPER MINI TYPE) OUTLINE DRAWING DESCRIPTION Unit：ｍｍ ISA1989AU1 is a ultra super mini package resin sealed 1.6 silicon PNP epitaxial transistor, 0.4 It is designed for low frequency voltage application. 0.8 0.4 0.3 0.5 ② 1.6 1.0 ① 0.5 . FEATURE ③ ● Small collector to emitter saturation voltage. VCE(sat)=-0.3V max（@ I C=-30mA ,IB=-1.5mA） 0.15 0～0.1 ●Super mini package for easy mounting 0.55 0.7 ●Excellent linearity of DC forward gain. APPLICATION For Hybrid IC,small type machine low frequency voltage JEITA：SC-75A Amplify application. TERMINAL CONNECTER ①：BASE ②：EMITTER ③：COLLECTOR MAXIMUM RATINGS（Ta=25℃） Symbol . Parameter Ratings Unit VCBO Collector to Base voltage -50 V VCEO Collector to Emitter voltage -50 V VEBO Emitter to Base voltage -6 V Collector current -100 mA Pc Collector dissipation 150 mW Tj Junction temperature ＋150 ℃ Tstg Storage temperature -55～＋150 ℃ I O MARKING . TR ELECTRICAL CHARACTERISTICS（Ta=25℃） Parameter C to E break down voltage Symbol V(BR)CEO Limits Test conditions Unit Min Typ Max -50 - - =-50V, I E=0mA - - -0.5 μA =-4V, I C=0mA - - -0.5 μA I C=-100μA ,R BE =∞ V Collector cut off current ICBO V CB Emitter cut off current IEBO V EB DC forward current gain hFE V CE 120 - 560 DC forward current gain hFE V CE=-6V, I C=-0.1mA 70 - - I C=-30mA ,IB=-1.5mA - - -0.3 V - 200 - MHz - 2.5 - pF C to E Saturation Vlotage Gain bandwidth product Collector output capacitance VCE(sat) =-6V, I C=-1mA fT V CE Cob V CE=-6V, I E=0,f=1MHz ※ =-6V, I E=10mA ※） It shows hFE classification in below table. Item Q R S hFE item 120～270 180～390 270～560 ISAHAYA ELECTRONICS CORPORATION 〈SMALL-SIGNAL TRANSISTOR〉 ISA1989AU1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(ULTRA SUPER MINI TYPE) TYPICAL CHARACTERISTICS Collector dissipation－AMBIENT TEMPERTURE GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT 400 200 GAIN BAND WIDTH PRODUCT fT[MHz] 150 100 50 300 200 100 0 0 25 50 75 100 AMBIENT TEMPERTURE Ta (℃) 125 150 0 0.1 1 10 100 EMITTER CURRENT IE[mA] DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 1000 100 COLLECTOR OUTPUT CAPACITANCE Cob[pF] DC FORWARD CURRENT GAIN hFE VCE=-6V 100 10 -0.1 -1 -10 -100 -1000 COLLECTOR CURRENT IC[mA] 10 1 0 -0.1 -1 COMMON EMITTER TRANSFER VCE=-6V -40 -30 -20 -10 -0 -0.0 -0.2 -0.4 -0.6 -0.8 -10 COLLECTOR TO BASE VOLTAGE VCB[V] -50 COLLECTOR CURRENT IC[mA] Collector dissipation Pc (mW) VCE=-6V -1.0 BASE TO EMITTER VOLTAGE VBE[V] ISAHAYA ELECTRONICS CORPORATION -100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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