ISAHAYA ISA2191AT2

〈Transistor〉
ISA2191AT2
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
ISA2191AT2 is a super mini package resin sealed silicon PNP epitaxial
Unit:mm
transistor,It is designed for low frequency application.
1.21±0.1
Since it is a super-thin flat lead type package,a high-density
0.25±0.02
0.79±0.1
● Excellent linearly of DC forward current gain.
0.4
● Super-thin flat lead type package. t=0. 5mm
①
②
0.8
1.21±0.1
FEATURE
0.4
mounting are possible.
③
● Low collector to emitter saturation voltage
0.5±0.03
0.11±0.02
VCE(sat)=-0.3V max (@Ic=-100mA/IB=-10mA)
APPLICATION
For hybrid IC,small type machine low frequency voltage amplify
application
JEITA:─
ISAHAYA:T-USM
MAXIMUM RATINGS(Ta=25℃)
Symbol
Parameter
TERMINAL CONNECTER
Ratings
Unit
①:BASE
②:EMITTER
VCBO
Collector to Base voltage
-60
V
VEBO
Emitter to Base voltage
-6
V
VCEO
Collector to Emitter voltage
-50
V
IC
Collector current
-150
mA
PC
Collector dissipation
125(※)
mW
Tj
Junction temperature
125
℃
Tstg
Storage temperature
-55~125
℃
③:COLLECTOR
MARKING
Abbreviation for Kind
hFE Item
J
F
7
I
H
※package mounted on 9×19×1mm glass-epoxy substrate.
A
B
C
D
E
F
G
A~F running No.
G~J Month of manufacture
電気的特性(Ta=25℃)
Parameter
Collector to Emitter Breakdown voltage
Symbol
V(BR)CEO
Limits
Test conditions
IC=-100μA, R
BE
=∞
Min
Min
-50
-
-
V
-
-
-0.1
μA
-
-
-0.1
μA
Collector cut off current
ICBO
V
CB
Emitter cut off current
IEBO
V
EB=-6V, I C=0mA
DC forward current gain
hFE*
V
CE
=-6V, I C=-1mA
150
-
500
-
DC forward current gain
hFE
V
CE
=-6V, I C=-100μA
90
-
-
-
C to E
saturation voltage
Gain bandwidth product
Collector output capacitance
VCE(sat)
=-60V, I E=0mA
Unit
Min
IC=-100mA, I B=-10mA
-
-
-0.3
V
fT
V
CE=-6V, I E=10mA
-
200
-
MHz
Cob
V
CB
-
3.0
-
pF
=-6V, I E=0A, f=1MHz
※ It shows hFE classification in below table
ISAHAYA ELECTRONICS CORPORATION
Item
E
F
hFE
150~300
250~500
〈Transistor〉
ISA2191AT2
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
Collector dissipation-AMBIENT TEMPERTURE
COMMON EMITTER OUTPUT
-50
IB=-0.25mA
200
IB=-0.20mA
IB=-0.15mA
COLLECTOR CURRENT IC(mA)
Collector dissipation Pc (mW)
-40
150
100
50
IB=-0.10mA
-30
-20
IB=-0.05mA
-10
Ta=25℃
VCE=-6V
IB=-0mA
0
0
25
50
75
100
AMBIENT TEMPERTURE Ta (℃)
125
-0
150
-0
-2
-4
-6
-8
COLLECTOR TO EMITTER VOLTAGE VCE(V)
-10
DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT
GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT
10000
250
GAIN BAND WIDTH PRODUCT fT(MHz)
1000
100
Ta=25℃
VCE=-6V
f=100MHz
200
150
100
50
0
10
-0.1
-1
-10
COLLECTOR CURRENT IC(mA)
1
-100
10
EMITTER CURRENT IE(mA)
100
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
COMMON EMITTER TRANSFER
100
-50
COLLECTOR OUTPUT CAPACITANCE Cob(pF)
Ta=25℃
VCE=-6V
-40
COLLECTOR CURRENT IC(A)
DC FORWARD CURRENT GAIN hFE
Ta=25℃
VCE=-6V
-30
-20
-10
Ta=25℃
IE=0
f=1MHz
10
1
0
-0
0.0
0.2
0.4
0.6
0.8
BASE TO EMITTER VOLTAGE VBE(V)
1.0
-1
-10
COLLECTOR TO BASE VOLTAGE VCB(V)
ISAHAYA ELECTRONICS CORPORATION
-100
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Nov.2006