〈Transistor〉 ISA2191AT2 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING ISA2191AT2 is a super mini package resin sealed silicon PNP epitaxial Unit:mm transistor,It is designed for low frequency application. 1.21±0.1 Since it is a super-thin flat lead type package,a high-density 0.25±0.02 0.79±0.1 ● Excellent linearly of DC forward current gain. 0.4 ● Super-thin flat lead type package. t=0. 5mm ① ② 0.8 1.21±0.1 FEATURE 0.4 mounting are possible. ③ ● Low collector to emitter saturation voltage 0.5±0.03 0.11±0.02 VCE(sat)=-0.3V max (@Ic=-100mA/IB=-10mA) APPLICATION For hybrid IC,small type machine low frequency voltage amplify application JEITA:─ ISAHAYA:T-USM MAXIMUM RATINGS(Ta=25℃) Symbol Parameter TERMINAL CONNECTER Ratings Unit ①:BASE ②:EMITTER VCBO Collector to Base voltage -60 V VEBO Emitter to Base voltage -6 V VCEO Collector to Emitter voltage -50 V IC Collector current -150 mA PC Collector dissipation 125(※) mW Tj Junction temperature 125 ℃ Tstg Storage temperature -55~125 ℃ ③:COLLECTOR MARKING Abbreviation for Kind hFE Item J F 7 I H ※package mounted on 9×19×1mm glass-epoxy substrate. A B C D E F G A~F running No. G~J Month of manufacture 電気的特性(Ta=25℃) Parameter Collector to Emitter Breakdown voltage Symbol V(BR)CEO Limits Test conditions IC=-100μA, R BE =∞ Min Min -50 - - V - - -0.1 μA - - -0.1 μA Collector cut off current ICBO V CB Emitter cut off current IEBO V EB=-6V, I C=0mA DC forward current gain hFE* V CE =-6V, I C=-1mA 150 - 500 - DC forward current gain hFE V CE =-6V, I C=-100μA 90 - - - C to E saturation voltage Gain bandwidth product Collector output capacitance VCE(sat) =-60V, I E=0mA Unit Min IC=-100mA, I B=-10mA - - -0.3 V fT V CE=-6V, I E=10mA - 200 - MHz Cob V CB - 3.0 - pF =-6V, I E=0A, f=1MHz ※ It shows hFE classification in below table ISAHAYA ELECTRONICS CORPORATION Item E F hFE 150~300 250~500 〈Transistor〉 ISA2191AT2 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE Collector dissipation-AMBIENT TEMPERTURE COMMON EMITTER OUTPUT -50 IB=-0.25mA 200 IB=-0.20mA IB=-0.15mA COLLECTOR CURRENT IC(mA) Collector dissipation Pc (mW) -40 150 100 50 IB=-0.10mA -30 -20 IB=-0.05mA -10 Ta=25℃ VCE=-6V IB=-0mA 0 0 25 50 75 100 AMBIENT TEMPERTURE Ta (℃) 125 -0 150 -0 -2 -4 -6 -8 COLLECTOR TO EMITTER VOLTAGE VCE(V) -10 DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT 10000 250 GAIN BAND WIDTH PRODUCT fT(MHz) 1000 100 Ta=25℃ VCE=-6V f=100MHz 200 150 100 50 0 10 -0.1 -1 -10 COLLECTOR CURRENT IC(mA) 1 -100 10 EMITTER CURRENT IE(mA) 100 COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE COMMON EMITTER TRANSFER 100 -50 COLLECTOR OUTPUT CAPACITANCE Cob(pF) Ta=25℃ VCE=-6V -40 COLLECTOR CURRENT IC(A) DC FORWARD CURRENT GAIN hFE Ta=25℃ VCE=-6V -30 -20 -10 Ta=25℃ IE=0 f=1MHz 10 1 0 -0 0.0 0.2 0.4 0.6 0.8 BASE TO EMITTER VOLTAGE VBE(V) 1.0 -1 -10 COLLECTOR TO BASE VOLTAGE VCB(V) ISAHAYA ELECTRONICS CORPORATION -100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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