〈SMALL-SIGNAL TRANSISTOR〉 2SC3052 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE(mini type) DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC3052 is a mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application. . FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=0.3V max（@Ic=100mA,IB=10mA） ●Excellent linearity of DC forward gain. ●Super mini package for easy mounting APPLICATION For Hybrid IC,small type machine low frequency voltage TERMINAL CONNECTER Amplify application. ①：BASE JEITA：SC-59 ②：EMITTER JEDEC：Similar to TO-236 ③：COLLECTOR MAXIMUM RATINGS（Ta=25℃） Symbol Ratings Unit VCBO Collector to Base voltage 50 V VCEO Collector to Emitter voltage 50 V VEBO I O Parameter Emitter to Base voltage Collector current 6 V 200 mA Pc Collector dissipation 200 mW Tj Junction temperature ＋150 ℃ Tstg Storage temperature -55∼＋150 ℃ MARKING L F Type name hFE Item ELECTRICAL CHARACTERISTICS（Ta=25℃） Parameter Symbol C to E break down voltage V(BR)CEO Limits Test conditions Max Unit 50 - - ICBO V CB=50V, I E=0mA - - 0.1 μA Emitter cut off current IEBO V EB =6V, I C=0mA - - 0.1 μA DC forward current gain hFE V CE 150 - 500 DC forward current gain hFE V CE=6V, I C=0.1mA 90 - - VCE(sat) BE =∞ Typ Collector cut off current C to E Saturation Vlotage I C=100μA ,R Min =6V, I C=1mA ※ V I C=100mA ,IB=10mA - - 0.3 V fT V CE=6V, I E=-10mA - 200 - MHz Collector output capacitance Cob V CB =6V, I E=0,f=1MHz - 2.5 - pF Noise figure NF V CE =6V, I E=-0.1mA,f=1kHz,RG=2kΩ - - 15 dB Gain bandwidth product ※） It shows hFE classification at right table. ISAHAYA ELECTRONICS CORPORATION Item E F hFE Item 150∼300 250∼500 〈SMALL-SIGNAL TRANSISTOR〉 2SC3052 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE(mini type) COMMON EMITTER TRANSFER COMMON EMITTER OUTPUT 0.16mA 50 Ta=25℃ 0.14mA Ta=25℃ VCE=6V 0.12mA 40 COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(mA) 50 0.10mA 30 0.08mA 0.06mA 20 0.04mA 10 0.02mA 40 30 20 10 IB=0 0 0 0 1 2 3 4 COLLECTOR EMITTER VOLTAGE VCE(V) 5 0 0.2 0.4 0.6 0.8 BASE TO EMITTER VOLTAGE VBE(V) GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 10000 250 GAIN BAND WIDTH PRODUCT fT(MHz) Ta=25℃ VCE=6V 100(@IC=1mA) 1000 100 10 Ta=25℃ VCE=6V 200 150 100 50 0 -0.1 1 0.1 1 10 100 1000 COLLECTOR CURRENT IC(mA) COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE -1 -10 EMITTER CURRENT IE(mA) -100 COLLECTOR DISSIPATION VS.AMBIENT TEMPERTURE 100 250 Ta=25℃ IE=0 f=1MHz COLLECTOR DISSIPATION Pc (mW) COLLECTOR OUTPUT CAPACITANCE Cob(pF) RELATIVE VALUE OF DC FORWARD CURRENT GAIN hFE 1 200 10 150 100 1 50 0 0 0.1 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE VCB(V) 25 50 75 100 AMBIENT TEMPERTURE Ta (℃) ISAHAYA ELECTRONICS CORPORATION 125 150 〈SMALL-SIGNAL TRANSISTOR〉 2SC3052 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE(mini type) ISAHAYA ELECTRONICS CORPORATION 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials ·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. ·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. ·All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. ·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Sep.2010