ISAHAYA 2SC5625

〈SMALL-SIGNAL TRANSISTOR〉
2SC5625
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE(mini type)
DESCRIPTION
OUTLINE DRAWING
Unit:mm
2SC5625 is a super mini package resin sealed
silicon NPN epitaxial transistor,
2.5
It is designed for low frequency voltage application.
1.5
0.95
0.95
2.9
1.90
FEATURE
①
②
0.5
0.4
0.5
.
③
● Small collector to emitter saturation voltage.
VCE(sat)=0.5V max
0.16
0∼0.1
0.8
1.1
●Super mini package for easy mounting
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
JEITA:SC-59
TERMINAL CONNECTER
MAXIMUM RATINGS(Ta=25℃)
Symbol
①:BASE
Parameter
Ratings
VCBO
Collector to Base voltage
VCEO
Collector to Emitter voltage
VEBO
Emitter to Base voltage
I
Unit
300
300
V
7
V
Collector current
100
mA
Pc
Collector dissipation
150
mW
Tj
Junction temperature
+125
℃
Tstg
Storage temperature
-55∼+125
℃
O
②:EMITTER
V
③:COLLECTOR
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parameter
Symbol
Test conditions
Limits
Min
Typ
Max
Unit
C to B break down voltage
V(BR)CBO
I C=50μA ,I E=0
300
-
-
V
E to B break down voltage
V(BR)EBO
I C=50μA ,I C=0
7
-
-
V
C to E break down voltage
V(BR)CEO
300
-
-
V
-
-
0.5
μA
-
-
0.5
μA
60
-
I C=1mA ,R
BE=∞
Collector cut off current
ICBO
V
CB=300V, I E=0mA
Emitter cut off current
IEBO
V
EB=5V,
DC forward current gain
hFE
V
※1
CE=10V, I C=10mA C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
VCE(sat)
I C=0mA
305
I C=100mA ,IB=10mA
-
-
0.5
V
fT
V
CE=6V, I E=-10mA
-
40
-
MHz
Cob
V
CB=6V,
-
3.0
-
pF
I E=0mA,f=1MHz
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Jan.2003