ISAHAYA RT1N240X

〈Transistor〉
RT1N240X SERIES
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
DESCRIPTION
OUTLINE
RT1N240X is a one chip transistor
with built-in bias resistor,PNP type is RT1P240X.
DRAWING
RT1N240U
UNIT:mm
RT1N240C
1.6
0.4
FEATURE
2.5
0.8
0.4
0.5
1.5
0.5
②
0.4
0.95
③
①
0.95
1.6
1.0
2.9
1.90
②
0.3
0.5
①
0.5
・Built-in bias resistor (R1=22kΩ) .
③
APPLICATION
C
(OUT)
0.16
0∼0.1
0.8
0∼0.1
Equivalent circuit
JEITA:−
JEDEC:−
B
(IN)
E
(GND)
JEITA:SC-59
JEDEC:Similar to TO-236
Terminal Connector
①:Base
②:Emitter
③:Collector
Terminal Connector
①:Base
②:Emitter
③:Collector
RT1N240M
RT1N240S
4.0
2.1
1.25
0.425
③
1.0
0.1
1.0
14.0
②
0.3
0.65
①
0.65
2.0
1.3
3.0
0.425
0.45
0∼0.1
0.4
2.5
0.7
0.9
1.27 1.27
0.15
R1
1.1
0.15
0.55
0.7
Inverted circuit,switching circuit,interface circuit,
driver circuit.
JEITA:SC-70
JEDEC:−
Terminal Connector
①:Base
②:Emitter
③:Collector
ISAHAYA ELECTRONICS CORPORATION
①
②
③
JEITA:−
JEDEC:−
Terminal Connector
①:Emitter
②:Collector
③:Base
RT1N240X SERIES
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
MAXIMUM RATING (Ta=25℃)
SYMBOL
PARAMETER
VCBO
VEBO
VCEO
I C
I CM
PC
Tj
Tstg
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RATING
RT1N240M
RT1N240C
50
6
50
100
200
150 200
+150
+150
-55∼+150
-55∼+150
RT1N240U
RT1N240S
UNIT
V
V
V
mA
mA
mW
℃
℃
450
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
PARAMETER
V(BR)CEO
I CBO
hFE
VCE(sat)
R1
fT
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input resistance
Gain band width product
TEST CONDITION
I C=100 μA,RBE=∞
VCB=50V,I E =0
VCE=5V,I C =1mA
I C =10mA,I B =0.5mA
MIN
50
LIMIT
TYP
0.1
100
15
VCE=6V,I
E
=-10mA
0.3
29
22
200
TYPICAL CHARACTERISTICS
IN P U T ON V OL TA GE
V S. C OL L EC TOR C U R R EN T
D C F OR W A R D C U R R EN T GA IN
V S. C OL L EC TOR C U R R EN T
10
1000
DC FORWARD CURRENT GAIN h FE
INPUT ON VOLTEGE VI(ON)(V)
VCE=0.2V
1
VCE=5V
100
10
0.1
1
10
COLLECTOR CURRENT I C(mA)
100
1
10
COLLECTOR CURRENT IC(mA)
C OL L EC TOR C U R R EN T
V S. IN P U T OF F V OL TA GE
COLLECTOR CURRENT I C(μA)
1000
VCE=5V
100
10
0
0.4
0.8
1.2
1.6
INPUT OFF VOLTAGE VI(OFF) (V)
MAX
2
ISAHAYA ELECTRONICS CORPORATION
100
UNIT
V
μA
−
V
kΩ
MHz
http://www.idc-com.co.jp
6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN
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