ＲＴ１Ｐ４３１Ｘ SERIES Semiconductor 〈Transistor〉 Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE DRAWING UNIT：mm RT1P431X is a one chip transistor with built-in bias resistor,NPN type is RT1N431X. RT1P431U RT1P431C 1.6 0.4 FEATURE 2.5 0.8 0.4 0.5 1.5 0.5 ③ 0.4 2.9 1.90 0.95 0.95 0.3 0.5 ② 1.6 1.0 ① 0.5 ・Built-in bias resistor (R1=4.7kΩ,R2=4.7kΩ). ① ② ③ APPLICATION C (OUT) 0.16 0.8 0∼0.1 EIAJ：− JEDEC：− R2 E (GND) EIAJ：SC-59 JEDEC：Similar to TO-236 Terminal Connector ①：Base ②：Emitter ③：Collector Terminal Connector ①：Base ②：Emitter ③：Collector RT1P431M RT1P431S 4.0 2.1 1.25 0.425 ② ③ 0.1 1.0 14.0 ① 1.0 0.3 2.0 1.3 0.65 0.65 3.0 0.425 0.45 0∼0.1 0.4 2.5 0.7 0.15 1.27 1.27 0.9 B (IN) 0∼0.1 Equivalent circuit R1 1.1 0.15 0.55 0.7 Inverted circuit,switching circuit,interface circuit, driver circuit. EIAJ：SC-70 JEDEC：− Terminal Connector ①：Base ②：Emitter ③：Collector ISAHAYA ELECTRONICS CORPORATION ① ② ③ EIAJ：− JEDEC：− Terminal Connector ①：Emitter ②：Collector ③：Base ＲＴ１Ｐ４３１Ｘ SERIES MITSUBISHI Semiconductor 〈Transistor〉 Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type MAXIMUM RATING (Ta=25℃) SYMBOL PARAMETER ＶＣＢＯ ＶＥＢＯ ＶＣＥＯ Ｉ Ｃ Ｉ ＣＭ ＰＣ Ｔ ｊ Ｔｓｔｇ Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature RT1P431U 150 +150 -55∼+150 RATING RT1P431M RT1P431C -50 -10 -50 -100 -200 200 +150 -55∼+150 RT1P431S UNIT V V V mA mA mW ℃ ℃ 450 ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL PARAMETER Ｖ（ＢＲ）ＣＥＯ Ｉ ＣＢＯ ｈＦＥ ＶＣＥ（ｓａｔ） ＶＩ（ＯＮ） ＶＩ（ＯＦＦ） Ｒ１ Ｒ２／Ｒ１ ｆＴ C to E break down voltage Collector cut off current DC forward current gain C to E saturation voltage Input on voltage Input off voltage Input resistance Resistance ratio Gain band width product TEST CONDITION I C=-100μA，RBE=∞ VCB=-50V，I E =0 VCE=-5V，I C =-10mA I C =-10mA，I B =-0.5mA VCE=-0.2V，I C =-5mA VCE=-5V，I C =-100μA MIN -50 LIMIT TYP -0.1 20 -0.8 3.3 0.8 VCE=-6V，I E =10mA -0.1 -1.4 -1.1 4.7 1.0 150 TYPICAL CHARACTERISTICS INPUT ON VOLTAGE VS.COLLECTOR CURRENT D C F O R W A R D C U R R E N T G A IN VS.COLLECTOR CURRENT 1000 VCE=-0.2V DC FORWARD CURRENT GAIN ｈＦＥ INPUT ON VOLTEGE ＶI(ON)（Ｖ） -10 -1 VCE=-5V 100 10 -0.1 -1 -10 -100 COLLECTOR CURRENT ＩＣ（ｍＡ） -1 -10 -100 COLLECTOR CURRENT Ｉ ｍＡ） Ｃ（ COLLECTOR CURRENT VS.INPUT OFF VOLTAGE COLLECTOR CURRENT ＩＣ（μＡ） -1000 VCE=-5V -100 -10 0 MAX -0.4 -0.8 -1.2 -1.6 -2 INPUT OFF VOLTAGE ＶＩ（ＯＦＦ）（Ｖ） ISAHAYA ELECTRONICS CORPORATION -0.3 -2.3 6.1 1.2 UNIT V μA − V V V kΩ MHz Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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