IS61WV12816BLL IS64WV12816BLL ISSI ® 128K x 16 HIGH-SPEED CMOS STATIC RAM FEBRUARY 2006 FEATURES DESCRIPTION • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V • Operating Current: 25mA (typ.) • Stand by Current: 400µA(typ.) • TTL and CMOS compatible interface levels • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial and Automotive temperatures available • Lead-free available The ISSI IS61WV12816BLL and IS64WV12816BLL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. They are fabricated using ISSI's highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS61WV12816BLL and IS64WV12816BLL are packaged in the JEDEC standard 44-pin TSOP (Type II) and 48-pin mini BGA (6mm x 8mm). FUNCTIONAL BLOCK DIAGRAM A0-A16 DECODER 128Kx16 MEMORY ARRAY VDD GND I/O0-I/O7 Lower Byte I/O DATA CIRCUIT I/O8-I/O15 Upper Byte CE OE WE UB LB COLUMN I/O CONTROL CIRCUIT Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. C 02/03/06 1 IS61WV12816BLL IS64WV12816BLL ISSI ® TRUTH TABLE Mode Not Selected Output Disabled Read Write WE CE OE LB UB X H X H H H L L L H L L L L L L L L X H X L L L X X X X X H L H L L H L X X H H L L H L L PIN CONFIGURATION 44-Pin TSOP (Type II) (T) A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 VDD GND I/O4 I/O5 I/O6 I/O7 WE A16 A15 A14 A13 A12 2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 I/O PIN I/O0-I/O7 I/O8-I/O15 High-Z High-Z High-Z DOUT High-Z DOUT DIN High-Z DIN High-Z High-Z High-Z High-Z DOUT DOUT High-Z DIN DIN VDD Current ISB1, ISB2 ICC ICC ICC PIN DESCRIPTIONS 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 GND VDD I/O11 I/O10 I/O9 I/O8 NC A8 A9 A10 A11 NC A0-A16 Address Inputs I/O0-I/O15 Data Inputs/Outputs CE Chip Enable Input OE Output Enable Input WE Write Enable Input LB Lower-byte Control (I/O0-I/O7) UB Upper-byte Control (I/O8-I/O15) NC No Connection VDD Power GND Ground Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. C 02/03/06 IS61WV12816BLL IS64WV12816BLL ISSI ® PIN CONFIGURATION 48-Pin mini BGA (B) 1 2 3 4 5 6 PIN DESCRIPTIONS A0-A16 Address Inputs I/O0-I/O15 Data Inputs/Outputs CE Chip Enable Input A LB OE A0 A1 A2 NC OE Output Enable Input B I/O8 UB A3 A4 CE I/O0 WE Write Enable Input C I/O9 I/O10 A5 A6 I/O1 I/O2 LB Lower-byte Control (I/O0-I/O7) D GND I/O11 NC A7 I/O3 VDD UB Upper-byte Control (I/O8-I/O15) E VDD I/O12 NC A16 I/O4 GND NC No Connection F I/O14 I/O13 A14 A15 I/O5 I/O6 VDD Power G I/O15 NC A12 A13 WE I/O7 GND Ground H NC A8 A9 A10 A11 NC Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. C 02/03/06 3 IS61WV12816BLL IS64WV12816BLL ISSI ® ABSOLUTE MAXIMUM RATINGS(1) Symbol VDD VTERM TSTG PT Note: Parameter Power Supply Voltage Relative to GND Terminal Voltage with Respect to GND Storage Temperature Power Dissipation Value –0.5 to 4.0V –0.5 to VDD + 0.5 –65 to + 150 1.0 Unit V V °C W 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. OPERATING RANGE (VDD) Range Industrial Automotive Ambient Temperature –40°C to +85°C –40°C to +125°C VDD (15 nS) 2.5V-3.6V 2.5V-3.6V VDD (12 nS) 3.3V + 10% DC ELECTRICAL CHARACTERISTICS (Over Operating Range) VDD = 2.5V-3.6V Symbol Parameter Test Conditions Min. Max. Unit VOH Output HIGH Voltage VDD = Min., IOH = –1.0 mA 1.8 — V VOL Output LOW Voltage VDD = Min., IOL = 1.0 mA — 0.4 V VIH Input HIGH Voltage 2.0 VDD + 0.3 V VIL Input LOW Voltage(1) –0.3 0.4 V ILI Input Leakage GND ≤ VIN ≤ VDD –1 1 µA ILO Output Leakage GND ≤ VOUT ≤ VDD, Outputs Disabled –1 1 µA Min. Max. Unit Note: 1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested. VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns). Not 100% tested. DC ELECTRICAL CHARACTERISTICS (Over Operating Range) VDD = 3.3V + 10% Symbol Parameter Test Conditions VOH Output HIGH Voltage VDD = Min., IOH = –4.0 mA 2.4 — V VOL Output LOW Voltage VDD = Min., IOL = 8.0 mA — 0.4 V VIH Input HIGH Voltage 2 VDD + 0.3 V VIL Input LOW Voltage(1) –0.3 0.8 V ILI Input Leakage GND ≤ VIN ≤ VDD –1 1 µA ILO Output Leakage GND ≤ VOUT ≤ VDD, Outputs Disabled –1 1 µA Note: 1. 4 VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested. VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns). Not 100% tested. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. C 02/03/06 IS61WV12816BLL IS64WV12816BLL ISSI ® POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) Symbol Test Conditions VDD Operating Supply Current VDD = Max., CE = VIL IOUT = 0 mA, f = Max. ICC Parameter -12ns Min. Max. Com. Ind. Auto typ.(2) — — 35 40 — 25 -15 ns Min. Max. Unit — — — — 30 35 40 20 mA ISB1 TTL Standby Current (TTL Inputs) VDD = Max., VIN = VIH or VIL CE ≥ VIH, f = max Com. Ind. Auto — — 20 20 — — — 20 20 30 mA ISB2 CMOS Standby Current (CMOS Inputs) VDD = Max., CE ≥ VDD – 0.2V, VIN ≥ VDD – 0.2V, or VIN ≤ 0.2V, f = 0 Com. Ind. Auto typ.(2) — — 750 900 — 400 — — — — 750 900 6 400 μA μA mA μA Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 2. Typical values are measured at VDD=3.3V, TA=250C. Not 100% tested. CAPACITANCE(1) Symbol Parameter CIN Input Capacitance COUT Input/Output Capacitance Conditions Max. Unit VIN = 0V 6 pF VOUT = 0V 8 pF Note: 1. Tested initially and after any design or process changes that may affect these parameters. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. C 02/03/06 5 IS61WV12816BLL IS64WV12816BLL ISSI ® AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level (VRef) Output Load Unit (2.5V-3.6V) 0.4V to VDD-0.3V 1.5ns VDD/2 Unit (3.3V + 10%) 0.4V to VDD-0.3V 1.5ns VDD/2 + 0.05 See Figures 1 and 2 See Figures 1 and 2 AC TEST LOADS 319 Ω ZO = 50Ω 3.3V 50Ω 1.5V OUTPUT OUTPUT 30 pF Including jig and scope 353 Ω 5 pF Including jig and scope Figure 1. Figure 2. READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter -12 ns Min. Max. -15 ns Min. Max. Unit tRC Read Cycle Time 12 — 15 — ns tAA Address Access Time — 12 — 15 ns tOHA Output Hold Time 3 — 3 — ns tACE CE Access Time — 12 — 15 ns tDOE OE Access Time — 5 — 7 ns tHZOE(2) OE to High-Z Output — 5 — 6 ns tLZOE OE to Low-Z Output 0 — 0 — ns (2) tHZCE CE to High-Z Output 0 5 0 6 ns tLZCE(2) CE to Low-Z Output 3 — 3 — ns tBA (2) LB, UB Access Time — 5 — 7 ns (2) tHZB LB, UB to High-Z Output 0 5 0 6 ns (2) tLZB LB, UB to Low-Z Output 0 — 0 — ns Notes: 1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to 3.0V and output loading specified in Figure 1. 2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 6 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. C 02/03/06 IS61WV12816BLL IS64WV12816BLL ISSI ® AC WAVEFORMS READ CYCLE NO. 1(1,2) (Address Controlled) (CE = OE = VIL, UB or LB = VIL) t RC ADDRESS t AA t OHA t OHA DOUT DATA VALID PREVIOUS DATA VALID READ1.eps READ CYCLE NO. 2(1,3) t RC ADDRESS t AA t OHA OE t HZOE t DOE CE t LZOE t ACE t HZCE t LZCE LB, UB DOUT HIGH-Z t LZB t BA t HZB DATA VALID UB_CEDR2.eps Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE, UB, or LB = VIL. 3. Address is valid prior to or coincident with CE LOW transition. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. C 02/03/06 7 IS61WV12816BLL IS64WV12816BLL ISSI ® WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range) Symbol Parameter -12 ns Min. Max. -15 ns Min. Max. Unit tWC Write Cycle Time 12 — 15 — ns tSCE CE to Write End 8 — 10 — ns tAW Address Setup Time to Write End 8 — 10 — ns tHA Address Hold from Write End 0 — 0 — ns tSA Address Setup Time 0 — 0 — ns tPBW LB, UB Valid to End of Write 9 — 10 — ns tPWE1 WE Pulse Width (OE = HIGH) 8 — 10 — ns tPWE2 WE Pulse Width (OE = LOW) 10 — 12 — ns tSD Data Setup to Write End 6 — 7 — ns tHD Data Hold from Write End 0 — 0 — ns tHZWE(3) WE LOW to High-Z Output — 5 — 7 ns tLZWE(3) WE HIGH to Low-Z Output 0 — 0 — ns Notes: 1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to 3.0V and output loading specified in Figure 1. 2. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write. 3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 8 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. C 02/03/06 IS61WV12816BLL IS64WV12816BLL ISSI ® WRITE CYCLE NO. 1(1,2) (CE Controlled, OE = HIGH or LOW) t WC VALID ADDRESS ADDRESS t SA t SCE t HA CE t AW t PWE1 t PWE2 WE t PBW UB, LB t HZWE DOUT DATA UNDEFINED t LZWE HIGH-Z t SD DIN t HD DATAIN VALID UB_CEWR1.eps Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. C 02/03/06 9 IS61WV12816BLL IS64WV12816BLL ISSI ® WRITE CYCLE NO. 2(1) (WE Controlled, OE = HIGH during Write Cycle) t WC ADDRESS VALID ADDRESS t HA OE CE LOW t AW WE t PWE1 t SA t PBW UB, LB t HZWE DOUT t LZWE HIGH-Z DATA UNDEFINED t SD t HD DATAIN VALID DIN UB_CEWR2.eps WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle) t WC ADDRESS VALID ADDRESS OE LOW CE LOW t HA t AW WE t SA t PWE2 t PBW UB, LB t HZWE DOUT DATA UNDEFINED t LZWE HIGH-Z t SD DIN t HD DATAIN VALID UB_CEWR3.eps 10 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. C 02/03/06 IS61WV12816BLL IS64WV12816BLL ISSI ® WRITE CYCLE NO. 4 (LB, UB Controlled, Back-to-Back Write) (1,3) t WC ADDRESS t WC ADDRESS 1 ADDRESS 2 OE t SA CE LOW t HA t SA WE UB, LB t HA t PBW t PBW WORD 1 WORD 2 t HZWE DOUT t LZWE HIGH-Z DATA UNDEFINED t HD t SD DIN t HD t SD DATAIN VALID DATAIN VALID UB_CEWR4.eps Notes: 1. The internal Write time is defined by the overlap of CE = LOW, UB and/or LB = LOW, and WE = LOW. All signals must be in valid states to initiate a Write, but any can be deasserted to terminate the Write. The tSA, tHA, tSD, and tHD timing is referenced to the rising or falling edge of the signal that terminates the Write. 2. Tested with OE HIGH for a minimum of 4 ns before WE = LOW to place the I/O in a HIGH-Z state. 3. WE may be held LOW across many address cycles and the LB, UB pins can be used to control the Write function. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. C 02/03/06 11 IS61WV12816BLL IS64WV12816BLL ISSI ® DATA RETENTION SWITCHING CHARACTERISTICS Min. Typ.(1) Max. Unit 1.8 — 3.6 V — — 0.4 0.4 0.9 6 mA mA See Data Retention Waveform 0 — — ns See Data Retention Waveform tRC — — ns Symbol Parameter Test Condition Options VDR VDD for Data Retention See Data Retention Waveform IDR Data Retention Current VDD = 2.0V, CE ≥ VDD – 0.2V tSDR tRDR Data Retention Setup Time Recovery Time Ind. Auto Note 1: Typical values are measured at VDD = 3.3V, TA = 25 C. Not 100% tested. O DATA RETENTION WAVEFORM (CE Controlled) tSDR Data Retention Mode tRDR VDD VDR CE GND 12 CE ≥ VDD - 0.2V Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. C 02/03/06 IS61WV12816BLL IS64WV12816BLL ISSI ® ORDERING INFORMATION: Industrial Range: –40°C to +85°C Speed (ns) 1 12 (15 ) Order Part No. Package IS61WV12816BLL-12BI IS61WV12816BLL-12BLI IS61WV12816BLL-12TI IS61WV12816BLL-12TLI mini BGA (6mm x 8mm) mini BGA (6mm x 8mm), Lead-free Plastic TSOP (Type II) Plastic TSOP (Type II), Lead-free Note: 1. Speed = 12ns for VDD = 3.3V + 10%. Speed = 15ns for VDD = 2.5V-3.6V Automotive Range: –40°C to +125°C Speed (ns) 15 Order Part No. Package IS64WV12816BLL-15BA3 IS64WV12816BLL-15TA3 IS64WV12816BLL-15TLA3 mini BGA (6mm x 8mm) Plastic TSOP (Type II) Plastic TSOP (Type II), Lead-free Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. C 02/03/06 13 ISSI ® PACKAGING INFORMATION Mini Ball Grid Array Package Code: B (48-pin) Top View Bottom View φ b (48x) 1 2 3 4 5 6 6 A 4 3 2 1 A e B B C C D D D 5 D1 E E F F G G H H e E E1 A2 Notes: 1. Controlling dimensions are in millimeters. A A1 SEATING PLANE mBGA - 6mm x 8mm mBGA - 8mm x 10mm MILLIMETERS INCHES MILLIMETER Sym. Min. Typ. Max. Min. Typ. Max. N0. Leads 48 Sym. Min. Typ. Max. N0. Leads 48 INCHES Min. Typ. Max. A — — 1.20 — — 0.047 A — — 1.20 — — 0.047 A1 0.24 — 0.30 0.009 — 0.012 A1 0.24 — 0.30 0.009 — 0.012 A2 0.60 — — 0.024 — — A2 0.60 — — 0.024 — — D 7.90 — 8.10 0.311 — 0.319 D 9.90 — 10.10 0.390 — 0.398 D1 E 5.25 BSC 5.90 — 6.10 0.207 BSC 0.232 — 0.240 D1 E 5.25 BSC 7.90 — 0.207 BSC 8.10 0.311 — 0.319 E1 3.75 BSC 0.148 BSC E1 3.75 BSC 0.148 BSC e 0.75 BSC 0.030 BSC e 0.75 BSC 0.030 BSC 0.012 0.014 0.016 b b 0.30 0.35 0.40 0.30 0.35 0.40 0.012 0.014 0.016 Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. D 01/15/03 ISSI ® PACKAGING INFORMATION Plastic TSOP Package Code: T (Type II) N N/2+1 E1 1 Notes: 1. Controlling dimension: millimieters, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package. 4. Formed leads shall be planar with respect to one another within 0.004 inches at the seating plane. E N/2 D SEATING PLANE A ZD . b e Symbol Ref. Std. No. Leads A A1 b C D E1 E e L ZD α Millimeters Min Max Inches Min Max (N) 32 — 1.20 — 0.047 0.05 0.15 0.002 0.006 0.30 0.52 0.012 0.020 0.12 0.21 0.005 0.008 20.82 21.08 0.820 0.830 10.03 10.29 0.391 0.400 11.56 11.96 0.451 0.466 1.27 BSC 0.050 BSC 0.40 0.60 0.016 0.024 0.95 REF 0.037 REF 0° 5° 0° 5° L α A1 Plastic TSOP (T - Type II) Millimeters Inches Min Max Min Max 44 — 1.20 — 0.047 0.05 0.15 0.002 0.006 0.30 0.45 0.012 0.018 0.12 0.21 0.005 0.008 18.31 18.52 0.721 0.729 10.03 10.29 0.395 0.405 11.56 11.96 0.455 0.471 0.80 BSC 0.032 BSC 0.41 0.60 0.016 0.024 0.81 REF 0.032 REF 0° 5° 0° 5° Millimeters Min Max C Inches Min Max 50 — 1.20 0.05 0.15 0.30 0.45 0.12 0.21 20.82 21.08 10.03 10.29 11.56 11.96 0.80 BSC 0.40 0.60 0.88 REF 0° 5° — 0.047 0.002 0.006 0.012 0.018 0.005 0.008 0.820 0.830 0.395 0.405 0.455 0.471 0.031 BSC 0.016 0.024 0.035 REF 0° 5° Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. F 06/18/03