ISSI ® IS62VV25616LL 256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM AUGUST 2002 FEATURES DESCRIPTION • High-speed access time: 70, 85, ns The ISSI IS62VV25616LL is a high-speed, 4,194,304 bit static RAMs organized as 262,144 words by 16 bits. They are fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices. • CMOS low power operation – 36 mW (typical) operating – 9 µW (typical) CMOS standby • Single 1.7V- 2.25 VDD power supply • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Available in the 44-pin TSOP (Type II) and 48-pin mini BGA (7.2mm x 8.7mm) For the IS62VV25616LL, when CE is HIGH (deselected) or CE is low and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS62VV25616LL is packaged in the JEDEC standard 44-pin TSOP (Type II) and 48-pin mini BGA (7.2mm x 8.7mm). FUNCTIONAL BLOCK DIAGRAM A0-A17 DECODER 256K x 16 MEMORY ARRAY I/O DATA CIRCUIT COLUMN I/O VDD GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte CE OE WE UB LB CONTROL CIRCUIT Copyright © 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B 08/07/02 1 ISSI IS62VV25616LL ® PIN CONFIGURATIONS 44-Pin TSOP (Type II) A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 VDD GND I/O4 I/O5 I/O6 I/O7 WE A16 A15 A14 A13 A12 48-Pin mini BGA (7.2mm x 8.7mm) 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 GND VDD I/O11 I/O10 I/O9 I/O8 NC A8 A9 A10 A11 A17 1 2 3 4 5 6 A LB OE A0 A1 A2 N/C B I/O8 UB A3 A4 CE I/O0 C I/O9 I/O10 A5 A6 I/O1 I/O2 D GND I/O11 A17 A7 I/O3 VDD E VDD I/O12 NC A16 I/O4 GND F I/O14 I/O13 A14 A15 I/O5 I/O6 G I/O15 NC A12 A13 WE I/O7 H NC A8 A9 A10 A11 NC PIN DESCRIPTIONS A0-A17 Address Inputs LB Lower-byte Control (I/O0-I/O7) I/O0-I/O15 Data Inputs/Outputs UB Upper-byte Control (I/O8-I/O15) CE Chip Enable Input NC No Connection OE Output Enable Input VDD Power WE Write Enable Input GND Ground TRUTH TABLE 2 I/O PIN I/O0-I/O7 I/O8-I/O15 WE CE OE LB UB Not Selected X X H L X X X H X H High-Z High-Z High-Z High-Z ISB1, ISB2 ISB1, ISB2 Output Disabled H X L L H X X H X H High-Z High-Z High-Z High-Z ICC ISB1, ISB2 Read H H H L L L L L L L H L H L L DOUT High-Z DOUT High-Z DOUT DOUT I CC Write L L L L L L X X X L H L H L L DIN High-Z DIN High-Z DIN DIN I CC Mode Vdd Current Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B 08/07/02 ISSI IS62VV25616LL ® OPERATING RANGE Range Commercial Industrial Ambient Temperature 0°C to +70°C –40°C to +85°C VDD 1.7V - 2.25V 1.7V - 2.25V ABSOLUTE MAXIMUM RATINGS(1) Symbol VTERM VDD TSTG PT Parameter Terminal Voltage with Respect to GND Vdd Related to GND Storage Temperature Power Dissipation Value –0.2 to VDD+0.25 –0.2 to +2.5 –65 to +150 1.0 Unit V V °C W Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Symbol Parameter Test Conditions Min. Max. Unit VOH Output HIGH Voltage IOH = -0.1 mA 1.4 — V VOL Output LOW Voltage IOL = 0.1 mA — 0.2 V VIH VIL(1) Input HIGH Voltage 1.4 VDD + 0.2 V Input LOW Voltage –0.3 0.4 V ILI Input Leakage GND ≤ VIN ≤ VDD –1 1 µA ILO Output Leakage GND ≤ VOUT ≤ VDD, Outputs Disabled –1 1 µA Notes: 1. VIL (min.) = –1.0V for pulse width less than 10 ns. CAPACITANCE(1) Symbol Parameter CIN Input Capacitance COUT Input/Output Capacitance Conditions Max. Unit VIN = 0V 8 pF VOUT = 0V 10 pF Note: 1. Tested initially and after any design or process changes that may affect these parameters. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B 08/07/02 3 ISSI IS62VV25616LL ® AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load Unit 0.4V to VDD - 0.2V 5 ns 0.9V See Figures 1 and 2 AC TEST LOADS 3070 Ω 2.8V OUTPUT OUTPUT 30 pF Including jig and scope Figure 1 4 3070 Ω 2.8V 3150 Ω 5 pF Including jig and scope 3150 Ω Figure 2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B 08/07/02 ISSI IS62VV25616LL ® POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) -70 Min. Max. Parameter ICC Vdd Dynamic Operating VDD = Max., Supply Current IOUT = 0 mA, f = fMAX Com. Ind. — — 30 35 — — 30 35 mA ICC1 Operating Supply Current VDD = Max., IOUT = 0 mA, f = 1 MHZ Com. Ind. — — 3 3 — — 3 3 mA ISB1 TTL Standby Current (TTL Inputs) VDD = Max., VIN = VIH or VIL CE ≥ VIH , f = 0 Com. Ind. — — 0.3 0.3 — — 0.3 0.3 mA CMOS Standby VDD = 1.95V., Com. Current (CMOS Inputs) CE ≥ VDD – 0.2V, Ind. VIN ≥ VDD – 0.2V, or VIN ≤ 0.2V, f = 0 OR ULB Control VDD = 1.95V., CE = VIL VIN ≤ 0.2V, f = 0; UB / LB = VDD – 0.2V — — 10 10 — — 10 10 µA OR ULB Control ISB2 Test Conditions -85 Min. Max. Symbol Unit Vdd = Max., VIN = VIH or VIL CE = VIL, f = 0, UB = VIH, LB = VIH Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter -70 Min. Max. -85 Min. Max. Unit tRC Read Cycle Time 70 — 85 — ns tAA Address Access Time — 70 — 85 ns tOHA Output Hold Time 10 — 10 — ns tACE CE Access Time — 70 — 85 ns OE Access Time — 35 — 40 ns (2) OE to High-Z Output — 25 — 25 ns (2) tLZOE OE to Low-Z Output 5 — 5 — ns tHZCE(2) CE to High-Z Output 0 25 0 25 ns tLZCE CE to Low-Z Output 10 — 10 — ns tBA LB, UB Access Time — 70 — 85 ns tHZB LB, UB to High-Z Output 0 25 0 25 ns tLZB LB, UB to Low-Z Output 0 — 0 — ns tDOE tHZOE (2) Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V, input pulse levels of 0.4 to 1.4V and output loading specified in Figure 1. 2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B 08/07/02 5 ISSI IS62VV25616LL ® AC WAVEFORMS READ CYCLE NO. 1(1,2) (Address Controlled) (CE = OE = VIL, UB or LB = VIL) tRC ADDRESS tAA tOHA tOHA DOUT DATA VALID PREVIOUS DATA VALID AC WAVEFORMS READ CYCLE NO. 2(1,3) (CE, OE, AND UB/LB Controlled) tRC ADDRESS tAA tOHA OE tHZOE tDOE CE tLZOE tACE tHZCE tLZCE LB, UB tBA DOUT HIGH-Z tHZB tLZB DATA VALID Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE, UB, or LB = VIL. 3. Address is valid prior to or coincident with CE LOW transition. 6 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B 08/07/02 ISSI IS62VV25616LL ® WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range) -70 Symbol Parameter -85 Min. Max. Min. Max. Unit tWC tSCE Write Cycle Time 70 — 85 — 1ns CE to Write End 65 — 70 — ns tAW tHA Address Setup Time to Write End 65 — 70 — ns Address Hold from Write End 0 — 0 — ns tSA tPWB Address Setup Time 0 — 0 — ns LB, UB Valid to End of Write 60 — 70 — ns tPWE tSD WE Pulse Width 55 — 60 — ns Data Setup to Write End 30 — 35 — ns tHD tHZWE(3) Data Hold from Write End 0 — 0 — ns WE LOW to High-Z Output — 30 — 30 ns tLZWE WE HIGH to Low-Z Output 5 — 5 — ns (3) Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V, input pulse levels of 0.4V to 1.4V and output loading specified in Figure 1. 2. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write. 3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. AC WAVEFORMS WRITE CYCLE NO. 1(1,2) (CE Controlled, OE = HIGH or LOW) t WC VALID ADDRESS ADDRESS t SA t SCS t HA CE t AW t PWE1 t PWE2 WE t PBW UB, LB t HZWE DOUT DATA UNDEFINED t LZWE HIGH-Z t SD DIN t HD DATAIN VALID UB_CSWR1.eps Notes: 1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CE and WE inputs and at least one of the LB and UB inputs being in the LOW state. 2. WRITE = (CE) [ (LB) = (UB) ] (WE). Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B 08/07/02 7 ISSI IS62VV25616LL ® WRITE CYCLE NO. 2 (WE Controlled: OE is HIGH During Write Cycle) t WC ADDRESS VALID ADDRESS t HA OE CE LOW t AW t PWE1 WE t SA t PBW UB, LB t HZWE DOUT t LZWE HIGH-Z DATA UNDEFINED t SD t HD DATAIN VALID DIN UB_CSWR2.eps WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle) t WC ADDRESS VALID ADDRESS OE LOW CE LOW t HA t AW t PWE2 WE t SA t PBW UB, LB t HZWE DOUT DATA UNDEFINED t LZWE HIGH-Z t SD DIN t HD DATAIN VALID UB_CSWR3.eps 8 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B 08/07/02 ISSI IS62VV25616LL ® WRITE CYCLE NO. 4 (UB/LB Controlled) t WC ADDRESS t WC ADDRESS 1 ADDRESS 2 OE t SA CE LOW t HA t SA WE UB, LB t HA t PBW t PBW WORD 1 WORD 2 t HZWE DOUT t LZWE HIGH-Z DATA UNDEFINED t HD t SD DATAIN VALID DIN t HD t SD DATAIN VALID UB_CSWR4.eps DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter Test Condition Min. Max. Unit VDR Vdd for Data Retention See Data Retention Waveform 1.0 2.25 V IDR Data Retention Current VDD = 1.0V, CE ≥ VDD – 0.2V — 10 µA tSDR tRDR Data Retention Setup Time See Data Retention Waveform 0 — ns Recovery Time See Data Retention Waveform tRC — ns DATA RETENTION WAVEFORM (CE Controlled) tSDR Data Retention Mode tRDR VDD 2.3V 2.0V VDR CE GND CE ≥ VDD Ð 0.2V Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B 08/07/02 9 ISSI IS62VV25616LL ® ORDERING INFORMATION Commercial Range: 0°C to +70°C Speed (ns) Order Part No. Package 70 IS62VV25616LL-70T IS62VV25616LL-70M TSOP (Type II) MiniBGA (7.2mmx8.7mm) 85 IS62VV25616LL-85T IS62VV25616LL-85M TSOP (Type II) MiniBGA (7.2mmx8.7mm) Industrial Range: –40°C to +85°C Speed (ns) 10 Order Part No. Package 70 IS62VV25616LL-70TI IS62VV25616LL-70MI TSOP (Type II) MiniBGA (7.2mmx8.7mm) 85 IS62VV25616LL-85TI IS62VV25616LL-85MI TSOP (Type II) MiniBGA (7.2mmx8.7mm) Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. B 08/07/02