IXYS DESC29-06AC

DSEC29-06AC
ADVANCE TECHNICAL INFORMATION
IFAV = 2x15 A
VRRM = 600 V
trr
= 35 ns
HiPerFREDTM Epitaxial Diode
ISOPLUS220TM
Electrically Isolated Back Surface
VRSM
VRRM
V
V
600
600
Type
ISOPLUS220TM
1
DSEC29-06AC
1
2
2
3
3
Isolated back surface *
* Patent pending
Symbol
Conditions
Maximum Ratings
TC = 140°C; rectangular, d = 0.5
35
15
A
A
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
110
A
EAS
TVJ = 25°C; non-repetitive
IAS = 0.9 A; L = 180 µH
0.1
mJ
IAR
VA = 1.5·VR typ.; f = 10 kHz; repetitive
0.1
A
-55...+175
175
-55...+150
°C
°C
°C
95
W
2500
V~
IFRMS
IFAVM
Features
l
l
l
TVJ
TVJM
Tstg
Ptot
TC = 25°C
VISOL
50/60 Hz RMS; IISOL ≤ 1 mA
FC
Mounting force
Weight
typical
l
l
l
l
l
11...65 / 2.4...11
3
N / lb
g
Applications
l
l
Symbol
IR
Q
VF R
Conditions
Characteristic Values
typ.
max.
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
100
0.5
µA
mA
IF = 15 A;
1.49
2.04
V
V
1.6
0.6
K/W
K/W
ns
TVJ = 150°C
TVJ = 25°C
l
l
l
l
l
l
RthJC
RthCH
trr
IF = 1 A; -di/dt = 100 A/µs;
VR = 30 V; TVJ = 25°C
35
IRM
VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs
TVJ = 100°C
4
4.9
Notes: Data given for TVJ = 25OC and per diode unless otherwise specified
R Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
S Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (<15pF)
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
A
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
l
l
l
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
98785 (12/00)
DSEC29-06AC
ISOPLUS220 OUTLINE
Note: All terminals are solder plated.
1 - Anode
2 - Common Cathode
3 - Anode