Advanced Technical Information HiPerFREDTM Epitaxial Diode IFAV = 2x15 A VRRM = 400 V trr = 30 ns with common cathode and soft recovery VRSM VRRM V V 400 400 DSEC 30-04A TO-247 AD Type DSEC 30-04A A C A C A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 145°C; rectangular, d = 0.5 50 15 A A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine tbd A EAS TVJ = 25°C; non-repetitive IAS = tbd A; L = tbd µH tbd mJ VA = 1.5·VR typ.; f = 10 kHz; repetitive tbd A -55...+175 175 -55...+150 °C °C °C 95 W 0.8...1.2 Nm 6 g Features ● ● ● IAR TVJ TVJM Tstg Ptot TC = 25°C Md mounting torque Weight typical ● ● ● ● Applications ● ● Symbol IR ① Conditions TVJ = 25°C; TVJ = 150°C; Characteristic Values typ. max. VR = VRRM VR = VRRM 100 0.5 µA mA 1.06 1.47 V V 1.6 K/W K/W ● ● ● ● VF ② IF = 15 A; TVJ = 150°C TVJ = 25°C RthJC RthCH 0.25 t rr IF = 1 A; -di/dt = 100 A/µs; VR = 30 V; TVJ = 25°C 30 IRM VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs TVJ = 100°C 5.0 ns ● ● A ● ● Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages ● 6.3 International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see pages IXYS Data Book IXYS reserves the right to change limits, test conditions and dimensions. © 2001 IXYS All rights reserved 127 Data according to IEC 60747 and per diode unless otherwise specified 1-1