DSEP 60-025A HiPerFREDTM Epitaxial Diode IFAV = 60 A VRRM = 250 V trr = 30 ns with soft recovery Preliminary data sheet VRSM VRRM V V 250 250 Type A C TO-247 AD C DSEP 60-025A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 120°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS IAR 70 60 A A 600 A TVJ = 25°C; non-repetitive IAS = 3.5 A; L = 180 µH 1.6 mJ VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.4 A -55...+175 175 -55...+150 °C °C °C 230 W 0.8...1.2 Nm 6 g TVJ TVJM Tstg Ptot TC = 25°C Md mounting torque Weight typical Symbol Conditions IR ① VF ② Characteristic Values typ. max. TVJ = 25°C; VR = VRRM TVJ = 150°C;VR = VRRM 650 2.5 µA mA IF = 60 A; 1.07 1.31 V V 0.65 K/W K/W TVJ = 150°C TVJ = 25°C RthJC RthCH 0.25 t rr IF = 1 A; -di/dt = 300 A/µs; VR = 30 V; TVJ = 25°C 30 IRM VR = 100 V; IF = 130 A; -diF/dt = 100 A/µs TVJ = 100°C 5 ns 6 A Features • • • • • • • International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation • Soft reverse recovery for low EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved 237 Data according to IEC 60747 and per diode unless otherwise specified 1-1