IXYS DSEP30-12A

DSEP 30-12A
DSEP 30-12AR
HiPerFREDTM Epitaxial Diode
IFAV = 30 A
VRRM = 1200 V
trr
= 40 ns
with soft recovery
VRSM
VRRM
V
V
1200
1200
1200
1200
Type
A
C
DSEP 30-12A
DSEP 30-12AR
ISOPLUS 247TM
TO-247 AD
Version A
Version AR
C
C
A
A
C (TAB)
TAB
A = Anode, C = Cathode
Symbol
IFRMS
IFAVM
Conditions
Maximum Ratings
70
30
rectangular, d = 0.5; TC (Vers. A) = 115°C
TC (Vers. AR)= 105°C
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
EAS
A
A
Features
200
A
TVJ = 25°C; non-repetitive
IAS = 11.5 A; L = 180 µH
14
mJ
VA = 1.25·VR typ.; f = 10 kHz; repetitive
1.2
A
-55...+175
175
-55...+150
°C
°C
°C
●
●
●
●
IAR
TVJ
TVJM
Tstg
Ptot
TC = 25°C; Version A
Version AR
165
135
W
W
Md *
FC
mounting torque
mounting force with clip
0.8...1.2
20...120
Nm
N
VISOL **
50/60 Hz RMS; IISOL £ 1 mA; leads-to-tab
2500
V~
Weight
typical
6
g
①
Conditions
Characteristic Values
typ.
max.
TVJ = 25°C; VR = VRRM
TVJ = 150°C; VR = VRRM
250
1
µA
mA
VF ②
IF = 30 A;
1.78
2.74
V
V
RthJC
Version A
Version AR
0.9
1.1
K/W
K/W
K/W
IR
●
●
●
Applications
●
●
●
●
* Version A only; ** Version AR only
Symbol
●
TVJ = 150°C
TVJ = 25°C
RthCH
0.25
trr
IF = 1 A; -di/dt = 200 A/µs;
VR = 30 V; TVJ = 25°C
40
IRM
VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs
TVJ = 100°C
5.5
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 ms, Duty Cycle < 2.0 %
ns
11.4
A
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Version ..R isolated and
UL registered E153432
●
●
●
●
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
●
●
●
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
018
Data according to IEC 60747 and per diode unless otherwise specified
1-2
DSEP 30-12A
DSEP 30-12AR
70
A
60
5
Qr
IF 50
60
TVJ= 100°C
VR = 600V
mC
TVJ= 100°C
VR = 600V
A
50
4
IRM
40
TVJ=150°C
3
40 TVJ=100°C
TVJ= 25°C
30
IF= 60A
IF= 30A
IF= 15A
2
IF= 60A
IF= 30A
IF= 15A
30
20
20
1
10
10
0
0
1
2
3
V
0
100
4
VF
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
2.0
220
ns
400
ms 1000
600 A/
800
-diF/dt
1.2
TVJ= 100°C
IF = 30A
V
tfr
0.8
VFR
IF= 60A
IF= 30A
IF= 15A
1.0
160
µs
tfr
80
180
IRM
200
Fig. 3 Peak reverse current IRM
versus -diF/dt
VFR
trr
Kf
0
120
TVJ= 100°C
VR = 600V
200
1.5
0
A/ms 1000
-diF/dt
40
0.4
0.5
140
Qr
0.0
120
0
40
80
120 °C 160
0
TVJ
200
400
800
A/
ms 1000
600
0
0
200
400
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
2
DSEP 30-12AR
1
DSEP 30-12A
K/W
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation ..A:
i
1
2
3
ZthJC
0.1
0.0
ms 1000
600 A/
800
diF/dt
Rthi (K/W)
ti (s)
0.465
0.179
0.256
0.0052
0.0003
0.0397
Constants for ZthJC calculation ..AR:
i
0.01
0.001
0.00001
1
2
3
4
0.0001
0.001
0.01
s
0.1
Rthi (K/W)
ti (s)
0.368
0.1417
0.0295
0.5604
0.0052
0.0003
0.0004
0.0092
1
t
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2000 IXYS All rights reserved
018
Fig. 7 Transient thermal resistance junction to case
2-2