DSEP 30-12A DSEP 30-12AR HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 V trr = 40 ns with soft recovery VRSM VRRM V V 1200 1200 1200 1200 Type A C DSEP 30-12A DSEP 30-12AR ISOPLUS 247TM TO-247 AD Version A Version AR C C A A C (TAB) TAB A = Anode, C = Cathode Symbol IFRMS IFAVM Conditions Maximum Ratings 70 30 rectangular, d = 0.5; TC (Vers. A) = 115°C TC (Vers. AR)= 105°C IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS A A Features 200 A TVJ = 25°C; non-repetitive IAS = 11.5 A; L = 180 µH 14 mJ VA = 1.25·VR typ.; f = 10 kHz; repetitive 1.2 A -55...+175 175 -55...+150 °C °C °C ● ● ● ● IAR TVJ TVJM Tstg Ptot TC = 25°C; Version A Version AR 165 135 W W Md * FC mounting torque mounting force with clip 0.8...1.2 20...120 Nm N VISOL ** 50/60 Hz RMS; IISOL £ 1 mA; leads-to-tab 2500 V~ Weight typical 6 g ① Conditions Characteristic Values typ. max. TVJ = 25°C; VR = VRRM TVJ = 150°C; VR = VRRM 250 1 µA mA VF ② IF = 30 A; 1.78 2.74 V V RthJC Version A Version AR 0.9 1.1 K/W K/W K/W IR ● ● ● Applications ● ● ● ● * Version A only; ** Version AR only Symbol ● TVJ = 150°C TVJ = 25°C RthCH 0.25 trr IF = 1 A; -di/dt = 200 A/µs; VR = 30 V; TVJ = 25°C 40 IRM VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs TVJ = 100°C 5.5 Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 ms, Duty Cycle < 2.0 % ns 11.4 A International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Version ..R isolated and UL registered E153432 ● ● ● ● Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages ● ● ● Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 018 Data according to IEC 60747 and per diode unless otherwise specified 1-2 DSEP 30-12A DSEP 30-12AR 70 A 60 5 Qr IF 50 60 TVJ= 100°C VR = 600V mC TVJ= 100°C VR = 600V A 50 4 IRM 40 TVJ=150°C 3 40 TVJ=100°C TVJ= 25°C 30 IF= 60A IF= 30A IF= 15A 2 IF= 60A IF= 30A IF= 15A 30 20 20 1 10 10 0 0 1 2 3 V 0 100 4 VF Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 2.0 220 ns 400 ms 1000 600 A/ 800 -diF/dt 1.2 TVJ= 100°C IF = 30A V tfr 0.8 VFR IF= 60A IF= 30A IF= 15A 1.0 160 µs tfr 80 180 IRM 200 Fig. 3 Peak reverse current IRM versus -diF/dt VFR trr Kf 0 120 TVJ= 100°C VR = 600V 200 1.5 0 A/ms 1000 -diF/dt 40 0.4 0.5 140 Qr 0.0 120 0 40 80 120 °C 160 0 TVJ 200 400 800 A/ ms 1000 600 0 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 2 DSEP 30-12AR 1 DSEP 30-12A K/W Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation ..A: i 1 2 3 ZthJC 0.1 0.0 ms 1000 600 A/ 800 diF/dt Rthi (K/W) ti (s) 0.465 0.179 0.256 0.0052 0.0003 0.0397 Constants for ZthJC calculation ..AR: i 0.01 0.001 0.00001 1 2 3 4 0.0001 0.001 0.01 s 0.1 Rthi (K/W) ti (s) 0.368 0.1417 0.0295 0.5604 0.0052 0.0003 0.0004 0.0092 1 t NOTE: Fig. 2 to Fig. 6 shows typical values © 2000 IXYS All rights reserved 018 Fig. 7 Transient thermal resistance junction to case 2-2