DSEC 60-03AQ HiPerFREDTM Epitaxial Diode IFAV = 2x30 A VRRM = 300 V trr = 30 ns with common cathode and soft recovery VRSM VRRM V V 300 300 A Type C A TO-3 P C (TAB) A DSEC 60-03AQ C A Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 145°C; rectangular, d = 0.5 IFSM 70 30 A A TVJ = 45°C; tp = 10 ms (50 Hz), sine 300 A EAS TVJ = 25°C; non-repetitive IAS = 3 A; L = 180 µH 1.2 mJ IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.3 A -55...+175 175 -55...+150 °C °C °C 165 W 0.8...1.2 20...120 Nm N TVJ TVJM Tstg Ptot TC = 25°C Md FC mounting torque mounting force with clip Weight typical Symbol Conditions IR ① VF ② 6 g Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM 250 1 µA mA IF = 30 A; 0.91 1.25 V V 0.9 K/W K/W TVJ = 150°C TVJ = 25°C RthJC RthCH 0.25 trr IF = 1 A; -di/dt = 200 A/µs; VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs TVJ = 100°C 30 ns 7 A = Anode, C = Cathode Features • • • • • • • International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation • Soft reverse recovery for low EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch A Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % IXYS reserves the right to change limits, Conditions and dimensions. © 2004 IXYS All rights reserved 413 Data according to IEC 60747 and per diode unless otherwise specified 1-3 DSEC 60-03AQ 60 800 30 TVJ = 100°C nC A VR = 150V 40 VR = 150V 25 600 IF TVJ = 100°C A IRM Qr 20 IF = 60A TVJ=150°C IF = 60A IF = 30A IF = 30A 400 TVJ=100°C IF = 15A 15 IF = 15A TVJ= 25°C 20 10 200 5 0 0.0 0.5 1.0 VF V 0 100 1.5 Fig. 1 Forward current IF versus VF 0 A/µs 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 1.4 90 1.2 trr 200 600 A/µs 800 1000 -diF/dt 400 Fig. 3 Peak reverse current IRM versus -diF/dt 14 TVJ = 100°C ns 0 TVJ = 100°C V VR = 150V 80 IF = 30A VFR Kf 0.8 70 IRM 60 0.6 0.6 IF = 30A IF = 15A Qr 10 0.4 50 0.4 0.2 40 0 40 80 120 °C 160 8 0 200 400 TVJ 600 800 1000 A/µs 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ tfr VFR IF = 60A 0.8 µs 1.0 tfr 12 1.0 1.2 Fig. 5 Recovery time trr versus -diF/dt 1 0.0 600 A/µs 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 1 2 3 ZthJC Rthi (K/W) ti (s) 0.465 0.179 0.256 0.005 0.0003 0.04 0.01 0.001 0.0001 0.00001 DSEP30-03A/DSEC 60-03A DSEC 60-03AQ 0.0001 0.001 0.01 s 0.1 NOTE: Fig. 2 to Fig. 6 shows typical values 1 t IXYS reserves the right to change limits, Conditions and dimensions. © 2004 IXYS All rights reserved 413 Fig. 7 Transient thermal resistance junction to case 2-3 DSEC 60-03AQ Dimensions in mm (1 mm = 0.0394) SYM MIN MAX MIN MAX IXYS reserves the right to change limits, Conditions and dimensions. © 2004 IXYS All rights reserved 413 A A1 A2 b b2 b4 c D D1 E E1 e L L1 ØP ØP1 S 3-3