DSEP 60-04A HiPerFREDTM Epitaxial Diode IFAV = 60 A VRRM = 400 V trr = 30 ns with soft recovery VRSM VRRM V V 400 400 Type A C TO-247 AD C DSEP 60-04A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 120°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS IAR 70 60 A A 600 A TVJ = 25°C; non-repetitive IAS = 3.5 A; L = 180 µH 1.6 mJ VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.4 A -55...+175 175 -55...+150 °C °C °C 230 W 0.8...1.2 Nm 6 g TVJ TVJM Tstg Ptot TC = 25°C Md mounting torque Weight typical Symbol Conditions IR ① VF ② Characteristic Values typ. max. TVJ = 25°C; VR = VRRM TVJ = 150°C;VR = VRRM 650 2 µA mA IF = 60 A; 1.01 1.24 V V 0.65 K/W K/W TVJ = 150°C TVJ = 25°C RthJC RthCH 0.25 t rr IF = 1 A; -di/dt = 300 A/µs; VR = 30 V; TVJ = 25°C 30 IRM VR = 100 V; IF = 130 A; -diF/dt = 100 A/µs TVJ = 100°C 6.0 Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % ns 7.5 A Features • • • • • • • International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation • Soft reverse recovery for low EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 311 Data according to IEC 60747 and per diode unless otherwise specified 1-2 DSEP 60-04A 100 3000 A nC 2500 80 IF VR = 200 V IF = 120 A IF = 120 A 40 IF = 60 A IF = 30 A IF = 60 A IF = 30 A 30 IRM Qr TVJ = 100°C 1500 TVJ = 25°C TVJ = 100°C VR = 200 V 50 2000 TVJ = 150°C 60 70 A 60 TVJ = 100°C 40 1000 20 20 500 0 0.0 0.4 0.8 1.2 V VF 10 0 100 1.6 Fig. 1 Forward current IF versus VF 0 A/µs 1000 -diF/dt Fig. 2 Typ. reverse recovery charge Qr 160 2.0 50 400 600 A/µs 800 1000 -diF/dt 1.80 µs tfr V VR = 200 V 40 trr Kf 200 Fig. 3 Typ. peak reverse current IRM TVJ = 100°C ns 140 1.5 0 IF = 120 A 120 VFR VFR 30 IF = 60 A IF = 30 A 1.75 tfr 1.70 100 1.0 TVJ = 100°C 20 IRM IF = 60 A 80 1.65 0.5 Qr 10 60 40 0.0 0 40 80 0 0 120 °C 160 200 400 TVJ 600 A/µs 800 1000 -diF/dt Fig. 4 Typ. dynamic parameters Qr, IRM 1.60 Fig. 5 Typ. recovery time trr versus -diF/dt 0 200 400 1.55 600 A/µs 800 1000 diF/dt Fig. 6 Typ. peak forward voltage VFR and tfr 10 K/W 1 ZthJC 0.1 0.01 0.001 0.0001 DSEP 60-04A 0.001 0.01 s 0.1 1 t IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 311 Fig. 7 Transient thermal resistance junction to case 2-2