GWM 70-01P2 Advanced Technical Information VDSS = 100 V ID25 = 70 A Ω RDSon typ. = 11 mΩ Three phase full bridge with Trench MOSFETs in DCB isolated high current package L+ G3 G5 S3 S5 Pins Gate G1 S1 L1 L2 L3 G4 G6 S4 S6 G2 S2 Pow s er Pin L- Applications MOSFETs Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C IF25 IF90 TC = 25°C (diode) TC = 90°C (diode) Symbol Conditions RDSon on chip level at VGS = 10 V; ID = 35 A VGSth VDS = 20 V; ID = 1 mA IDSS VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C IGSS 100 V ±20 V 70 50 A A 130 85 A A Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. TVJ = 25°C TVJ = 125°C 11 24 2 14 mΩ mΩ 4 V 1 µA mA 0.2 µA 0.1 VGS = ±20 V; VDS = 0 V Qg Qgs Qgd VGS= 10 V; VDS = 80 V; ID = 25 A 110 18 44 nC nC nC td(on) tr td(off) tf VGS= 10 V; VDS = 30 V; ID = 25 A; RG = 10 Ω 35 85 150 70 ns ns ns ns VF (diode) IF = 35 A; VGS= 0 V 0.8 t rr (diode) IF = 75 A; -di/dt = 100 A/µs; VDS = 30 V 80 ns RthJC RthJH with heat transfer paste 1.7 0.85 K/W K/W IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 1.25 AC drives • in automobiles - electric power steering - starter generator • in industrial vehicles - propulsion drives - fork lift drives • in battery supplied equipment Features • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode • package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer V 0604 Symbol 1-2 Advanced Technical Information Component GWM 70-01P2 Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings IRMS per pin in main current paths (L+, L-, L1, L2, L3) may be additionally limited by external connections TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 min FC Mounting force with clip Symbol Conditions 300 A -40...+175 -55...+125 °C °C 1000 V~ 50 - 250 N Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. Rpin to chip CP coupling capacity between shorted pins and mounting tab in the case Weight typ. 0.6 mΩ 160 pF 25 g Thermal Response junction - case (typ.) Cth1 = 0.039 J/K; Rth1 = 0.28 K/W Cth2 = 0.069 J/K; Rth2 = 0.57 K/W Dimensions in mm (1 mm = 0.0394") S6 G6 S5 G5 S4 G4 S3 G3 S2 G2 S1 G1 L2 L1 L- L+ 0604 L3 © 2006 IXYS All rights reserved 2-2