GWM 100-01X1 Three phase full Bridge VDSS =100V = 90A ID25 RDSon typ. = 7.5mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 100 V ± 20 V ID25 ID90 TC = 25°C TC = 90°C 90 68 A A IF25 IF90 TC = 25°C (diode) TC = 90°C (diode) 90 68 A A Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. RDSon 1) on chip level at VGS = 10 V; ID = 80 A TJ = 25°C TJ = 125°C VGS(th) VDS = 20 V; ID = 250 µA IDSS VDS = VDSS; VGS = 0 V IGSS VGS = ± 20 V; VDS = 0 V Qg Qgs Qgd VGS = 10 V; VDS = 65 V; ID = 90 A td(on) tr td(off) tf Eon Eoff Erecoff RthJC RthJH 1) typ. max. 7.5 14 8.5 2.5 TJ = 25°C TJ = 125°C inductive load VGS = 10 V; VDS = 48 V ID = 70 A; RG = 33 Ω; TJ = 125°C mW mW 4.5 V 1 µA mA 0.2 µA 0.1 90 30 30 nC nC nC 130 95 290 55 ns ns ns ns 0.4 0.4 0.007 mJ mJ mJ with heat transfer paste (IXYS test setup) 1.3 1.0 1.6 AC drives • in automobiles -electric power steering -starter generator • in industrial vehicles -propulsion drives -fork lift drives • in battery supplied equipment Features • MOSFETs in trench technology: -low RDSon -optimized intrinsic reverse diode • package: -high level of integration -high current capability 300 A max. -aux. terminals for MOSFET control -terminals for soldering or welding connections -isolated DCB ceramic base plate with optimized heat transfer •Space and weight savings Package options • 2 lead frames available - straight leads (SL) - SMD lead version (SMD) K/W K/W VDS = ID·(RDS(on) + 2RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110307e 1-6 GWM 100-01X1 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. VSD (diode) IF = 70 A; VGS = 0 V trr QRM IRM IF = 70 A; -diF/dt = 800 A/µs; VR = 48 V typ. max. 0.9 1.2 55 0.95 33 V ns µC A Component Symbol Conditions Maximum Ratings IRMS per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections TJ Tstg VISOL IISOL < 1 mA, 50/60 Hz, f = 1 minute FC mounting force with clip Symbol Conditions Rpin to chip 1) coupling capacity between shorted pins and mounting tab in the case Weight 1) A -55...+175 -55...+125 °C °C 1000 V~ 50 - 250 N Characteristic Values min. CP 300 typ. max. 0.6 mW 160 pF 25 g VDS = ID·(RDS(on) + 2RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110307e 2-6 GWM 100-01X1 Straight Leads GWM 100-01X1-SL 37,5 +0,20 5 ±0,05 (11x) 3 ±0,05 1,5 1 ±0,05 1 ±0,05 0,5 ±0,02 25 +0,20 53 ±0,15 2,1 4,5 12 ±0,05 4 ±0,05 (3x) 6 ±0,05 Surface Mount Device GWM 100-01X1-SMD 37,5 +0,20 1,5 (11x) 3 ±0,05 5 ±0,05 1 ±0,05 0,5 ±0,02 R1 ±0,2 25 +0,20 39 ±0,15 2,1 1 ±0,05 12 ±0,05 4,5 5 ±0,10 4 ±0,05 5° ±2° (3x) 6 ±0,05 Leads Ordering Straight Standard SMD Standard Part Name & Packing Unit Marking Part Marking Delivering Mode Base Qty. Ordering Code GWM 100-01X1 - SL GWM 100-01X1 Blister 28 505 535 GWM 100-01X1 - SMD GWM 100-01X1 Blister 28 505 542 IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110307e 3-6 GWM 100-01X1 180 1.2 140 120 1.0 ID - [A] VDSS [V] normalized 1.1 0.9 100 80 60 20 0 0 25 50 75 100 125 150 180 VGS= 20 V 15 V 160 140 TJ = 25°C 0 1 2 3 5 6 7 8 10 V Fig. 2 Typical transfer characteristic 180 TJ = 25°C VGS = 20 V 15 V 160 140 TJ = 125°C 10 V 120 120 ID [A] 100 7V 80 60 6V 20 5.5 V 5V 0 1 2 3 4 5 100 7V 80 6.5 V 60 6.5 V 40 40 6V 20 5.5 V 5V 0 6 0 1 2 VDS [V] 5.5 V 6 V 4.5 16 RDS(on) RDS(on) normalized 12 1.0 8 0.5 4 RDS(on) [mΩ] 1.5 5.0 20 VGS = 10 V ID = 90 A 2.0 4 0 25 50 75 100 125 0 150 TJ [°C] Fig. 5 Drain source on-state resistance RDS(on) versus junction temperature TJ IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 6 6.5 V TJ = 125°C 4.0 3.5 3.0 7V 2.5 2.0 VGS = 1.5 10 V 1.0 0.0 -25 5 Fig. 4 Typical output characteristic RDS(ON) - normalized 2.5 3 VDS [V] Fig. 3 Typical output characteristic RDS(on) normalized 4 VGS [V] TJ [°C] Fig. 1 Drain source breakdown voltage VDSS vs. junction temperature TJ 0 TJ = 125°C 40 0.8 0.7 -25 ID [A] VDS = 30 V 160 IDSS = 0.25 mA 0.5 15 V 20 V 0 20 40 60 80 100 120 140 160 180 200 ID [A] Fig. 6 Drain source on-state resistance RDS(on) versus ID 20110307e 4-6 GWM 100-01X1 14 120 12 10 100 80 VDS = 65 V 8 ID - [A] 6 40 4 20 2 0 20 40 60 80 100 0 120 0 25 50 Fig.7 Gate charge characteristic Fig. 8 Drain current ID vs. case temperature TC 0.6 600 250 0.5 VDS = 48 V VGS = +10/0 V 200 0.4 TJ = 125°C 0.3 td(on) tr 0.2 150 100 Eoff [mJ] TJ = 125°C 400 0.3 td(off) 0.2 300 200 Eon 0.1 0.0 Erec(off) x10 0 50 0.1 0 0.0 10 20 30 40 50 60 70 80 90 100 Eoff 0 0 350 td(on) TJ = 125°C 1.0 Eon 0.8 tr 200 0.4 100 0.0 0 1.0 50 0 10 20 30 40 50 60 70 80 90 100 RG [Ω] Fig. 11 Typ. turn-on energy & switching times vs. gate resistor, inductive switching IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 1000 ID = 90 A 0.8 250 150 Erec(off) x10 1200 VDS = 48 V VGS = +10/0 V 300 0.6 0.2 1.2 400 Eoff [mJ] 1.2 ID = 90 A Fig. 10 Typ. turn-off energy & switching times vs. collector current, inductive switching t [ns] 1.4 VDS = 48 V VGS = +10/0 V 100 ID [A] Fig. 9 Typ. turn-on energy & switching times vs. collector current, inductive switching 1.6 tf 10 20 30 40 50 60 70 80 90 100 ID [A] Eon, Erec(off) [mJ] 500 RG = 33 Ω RG = 33 Ω t [ns] Eon, Erec(off) [mJ] 0.6 300 VDS = 48 V VGS = +10/0 V 0.4 100 125 150 175 200 TC [°C] QG [nC] 0.5 75 t [ns] 0 60 800 TJ = 125°C td(off) 0.6 0.4 400 Eoff 0.2 0.0 tf 0 600 t [ns] VGS [V] TJ = 175°C VDS = 20 V ID = 90 A TJ = 25°C 200 0 10 20 30 40 50 60 70 80 90 100 RG [Ω] Fig. 12 Typ. turn-off energy & switching times vs. gate resistor, inductive switching 20110307e 5-6 GWM 100-01X1 70 60 60 50 60 A IF = 90 A 30 A 40 40 60 A IRM [A] 50 trr [ns] IF = 90 A 30 30 A 30 20 20 VR = 48 V TJ = 125°C 10 0 200 400 600 VR = 48 V TJ = 125°C 10 0 200 800 1000 1200 1400 1600 400 600 -diF /dt [A/µs] -diF/dt [A/µs] Fig. 13 Reverse recovery time trr of the body diode vs. di/dt 1.4 Fig. 14 Reverse recovery current IRM of the body diode vs. di/dt 180 IF = 90 A 1.2 140 1.0 120 30 A IF [A] Qrr [µC] VGS = 0 V 160 60 A 0.8 0.6 100 TJ = -25°C 25°C 125°C 150°C 80 60 0.4 40 VR = 48 V TJ = 125°C 0.2 0.0 200 400 600 800 1000 1200 1400 1600 20 0 800 1000 1200 1400 1600 0.0 0.2 0.4 -diF /dt [A/µs] 0.6 0.8 1.0 1.2 VSD [V] Fig. 15 Reverse recovery charge Qrr of the body diode vs. di/dt Fig. 16 Source drain diode current IF vs. source drain voltage VSD (body diode) VGS VDS ID 0.9 VGS t 0.1 VGS 0.9 ID 0.9 ID 0.1 ID td(on) 0.1 ID tr td(off) t tf Thermal Response [K/W] 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 GWM 160-0055X1 1 10 100 1000 10000 t [ms] Fig. 17 Definition of switching times IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Fig. 18 Typ. thermal impedance junction to heatsink ZthJH with heat transfer paste 20110307e 6-6