GWM 120-0075P3 VDSS = 75 V ID25 = 125 A Ω RDSon typ. = 3.7 mΩ Three phase full bridge with Trench MOSFETs in DCB isolated high current package L+ G3 G5 S3 S5 Pins Gate G1 S1 L1 L2 L3 G4 G6 S4 S6 G2 S2 Pow s er Pin L- Applications MOSFETs Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 75 V ±20 V ID25 ID90 TC = 25°C TC = 90°C 125 95 A A IF25 IF90 TC = 25°C (diode) TC = 90°C (diode) 130 85 A A Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. RDSon on chip level at VGS = 10 V; ID = 60 A VGSth VDS = 20 V; ID = 1 mA IDSS VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C 3.7 6.4 2 4.5 mΩ mΩ 4 V 1 µA mA 0.2 µA 0.1 IGSS VGS = ±20 V; VDS = 0 V Qg Qgs Qgd VGS= 10 V; VDS = 60 V; ID = 25 A td(on) tr td(off) tf VGS= 10 V; VDS = 30 V; ID = 25 A; RG = 10 Ω VF (diode) IF = 60 A; VGS= 0 V 0.9 t rr (diode) IF = 20 A; -di/dt = 100 A/µs; VDS = 30 V 90 ns RthJC RthJH with heat transfer paste 1.1 0.85 K/W K/W IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 91 19 28 nC nC nC 36 56 130 50 ns ns ns ns 1.4 AC drives • in automobiles - electric power steering - starter generator • in industrial vehicles - propulsion drives - fork lift drives • in battery supplied equipment Features • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode • package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer V 0604 Symbol 1-3 GWM 120-0075P3 Component Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings IRMS per pin in main current paths (L+, L-, L1, L2, L3) may be additionally limited by external connections TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 min FC Mounting force with clip Symbol Conditions 300 A -40...+175 -55...+125 °C °C 1000 V~ 50 - 250 N Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. Rpin to chip CP coupling capacity between shorted pins and mounting tab in the case Weight typ. 0.6 mΩ 160 pF 25 g Thermal Response junction - case (typ.) Cth1 = 0.039 J/K; Rth1 = 0.28 K/W Cth2 = 0.069 J/K; Rth2 = 0.57 K/W Dimensions in mm (1 mm = 0.0394") S6 G6 S5 G5 S4 G4 S3 G3 S2 G2 S1 G1 L2 L1 IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved L- L+ 0604 L3 2-3 GWM 120-0075P3 2.4 1.5 VGS = 6 V 8V 10 V 12 V V 1.2 2.0 RDSon RDSon(25°C) 1.6 VDS 0.9 1.2 0.6 TVJ = 25°C 0.8 0.3 0.4 0.0 -50 0.0 0 100 A 200 300 0 50 ID Fig. 1: typ. output characteristics [VDS = ID (RDSon + 2x Rpin to chip)] 100 TVJ 150 C Fig. 2: typ. dependence of RDSon on temperature 10 300 A V 250 VGS ID 8 200 6 VDS = 14 V 150 VDS = 60 V 4 100 TVJ = 125°C 50 2 TVJ = 25°C 0 0 0 1 2 3 0 5 V 6 4 20 40 Fig. 3: typ.transfer characteristics 80 100 nC Fig. 4: typ. gate charge characteristics 1 300 A 60 QG VGS VGS = 0 V K/W 250 -ID 0.1 200 ZthJC 0.01 150 100 0.001 TVJ = 125°C 50 TVJ = 25°C 0.0001 0.2 0.4 0.6 0.8 1.0 VSD 1.2 V Fig. 5: typ. conduction characteristics of body diode 0.00001 0.001 0.01 0.1 1 s 10 t Fig. 6: typ. transient thermal impedance IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 0.0001 0604 0 0 0.0 3-3