IXYS IXFK60N25Q

Advanced Technical Information
HiPerFETTM
Power MOSFETs
IXFH 60N25Q
IXFK 60N25Q
IXFT 60N25Q
Q-Class
VDSS
ID25
= 250 V
= 60 A
= 47 mW
£ 250 ns
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Low Gate Charge and Capacitances
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
250
250
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
60
240
60
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
45
1.5
mJ
J
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
5
V/ns
PD
TC = 25°C
360
W
(TAB)
TO-268 (D3) ( IXFT)
G
TO-264 AA (IXFK)
G
D
TL
1.6 mm (0.063 in) from case for 10 s
Md
Mounting torque
Weight
TO-247
TO-264
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
TO-247
TO-264
TO-268
6
10
4
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 1 mA
250
VGS(th)
VDS = VGS, ID = 4 mA
2
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
g
g
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
°C
300
V
4
V
±200
nA
50
1
mA
mA
47 mW
(TAB)
S
°C
°C
°C
-55 ... +150
150
-55 ... +150
TJ
TJM
Tstg
TO-247 AD (IXFH)
G = Gate
S = Source
D (TAB)
S
TAB = Drain
Features
• Low gate charge
• International standard packages
• Epoxy meet UL 94 V-0, flammability
classification
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Avalanche energy and current rated
• Fast intrinsic Rectifier
Advantages
• Easy to mount
• Space savings
• High power density
98630 (6/99)
1-2
IXFH 60N25Q IXFK 60N25Q
IXFT 60N25Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 0.5 • ID25, pulse test
22
35
S
5100
pF
1000
pF
C rss
400
pF
td(on)
27
ns
C iss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
60
ns
td(off)
RG = 2.0 W (External),
80
ns
25
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
Inches
Min. Max.
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
ns
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
180
nC
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
39
nC
90
nC
G
H
1.65 2.13
4.5
0.065 0.084
0.177
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
0.35
TO-247
TO-264
Dim. Millimeter
Min. Max.
A
B
RthJC
RthCK
TO-247 AD (IXFH) Outline
0.25
0.15
K/W
K/W
K/W
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5 2.49
0.087 0.102
TO-264 AA (IXFK) Outline
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
VSD
t rr
QRM
IRM
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
60
A
Repetitive; pulse width limited by TJM
240
A
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.5
V
250
ns
mC
A
1
8
IF = IS -di/dt = 100 A/ms, VR = 100 V
TO-268AA (IXFT) (D3 PAK)
Dim.
A
A1
A2
b
b2
C
D
E
E1
e
H
L
L1
L2
L3
L4
© 2000 IXYS All rights reserved
Millimeter
Min. Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
25.91
19.81
5.46
0.00
0.00
20.32
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
5.13
2.89
2.10
1.42
2.69
3.09
0.83
26.16
19.96
BSC
0.25
0.25
20.83
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-2