Low VCE(sat) IGBT with Diode High speed IGBT with Diode Combi Packs VCES IXGH10N60U1 600 V IXGH10N60AU1 600 V IC25 VCE(sat) 20 A 20 A 2.5 V 3.0 V TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 20 A I C90 TC = 90°C 10 A I CM TC = 25°C, 1 ms 40 A SSOA (RBSOA) VGE = 15 V, T VJ = 125°C, RG = 150 Ω Clamped inductive load, L = 300 µH ICM = 20 @ 0.8 VCES A PC TC = 25°C 100 W Features -55 ... +150 °C l TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque (M3) 1.13/10 Nm/lb.in. G G = Gate, E = Emitter, l l l Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 6 g 300 °C C l l E C = Collector, TAB = Collector International standard package JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode FRED) - soft recovery with low IRM Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. l l l BVCES IC = 750 µA, VGE = 0 V 600 VGE(th) IC = 500 µA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V I GES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V l TJ = 25°C TJ = 125°C 10N60U1 10N60AU1 V 5.5 V 260 2.5 µA mA ±100 nA 2.5 3.0 V V l Advantages l l l © 1996 IXYS All rights reserved AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Space savings (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost 91751G(3/96) IXGH10N60U1 IXGH10N60AU1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Cies Coes Cres VCE = 25 V, VGE = 0 V, f = 1 MHz Qg Q ge Q gc IC = IC90, VGE = 15 V, VCE = 0.5 VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff 4 70 25 45 nC nC nC 10N60AU1 10N60AU1 10N60U1 10N60AU1 10N60U1 10N60AU1 100 200 1 900 570 360 2.0 1.2 ns ns mJ 1500 ns 2000 ns 600 ns mJ mJ 0.25 1.25 K/W K/W RthJC RthCK Reverse Diode (FRED) pF pF pF ns ns mJ ns ns mJ Inductive load, TJ = 125°°C Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased RG 750 125 30 100 200 0.4 600 300 0.6 IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES , RG = Roff = 150 Ω IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 V CES, RG = Roff = 150 Ω S 50 15 25 Inductive load, TJ = 25°°C Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased RG 8 TO-247 AD Outline 1 = Gate 2 = Collector 3 = Emitter Tab = Collector Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90, VGE = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % I RM trr IF = IC90, VGE = 0 V, -diF/dt = 64 A/µs VR = 360 V TJ = 100°C IF = 1 A; -di/dt = 50 A/µs; VR = 30 V TJ = 25°C RthJC 2.5 165 35 1.75 V 50 A ns ns 2.5 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGH10N60U1 IXGH10N60AU1 Fig. 1 Saturation Characteristics 20 18 80 9V IC - Amperes 14 12 10 8 7V 6 60 40 10 0 0 3 4 11V 30 2 2 13V 50 20 1 V GE = 15V 70 4 0 Output Characterstics T J = 25°C 90 11V 16 IC - Amperes 100 13V VGE=15V TJ = 25°C Fig. 2 5 9V 7V 0 2 4 6 8 VCE - Volts Fig. 4 1.4 VCE(sat) - Normalized 8 7 VCE - Volts Temperature Dependence of Output Saturation Voltage 1.5 T J = 25°C 9 6 5 4 IC = 20A 3 IC = 10A 2 IC = 5A 1 VGE = 15V IC = 20A 1.3 1.2 1.1 IC = 10A 1.0 0.9 0.8 IC = 5A 0.7 0 0.6 5 6 7 8 9 10 11 12 13 14 15 -50 -25 0 VGE - Volts Fig. 6 1.2 20 18 BV / VGE(th) - Normalized VCE = 10 V 16 14 12 10 8 T J = 25°C 6 T J = 125°C 4 TJ = - 40°C 2 0 0 1 2 3 4 5 6 7 8 9 1.1 50 75 100 125 150 Temperature Dependence of Breakdown and Threshold Voltage VGE(th) IC = 250µA 1.0 0.9 BV CES IC = 250µA 0.8 0.7 0.6 -50 10 VGE - Volts -25 0 25 50 75 TJ - Degrees C G © 1996 IXYS All rights reserved 25 TJ - Degrees C Fig. 5 Input Admittance IC - Amperes 18 20 VCE - Volts Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 10 10 12 14 16 N JNB 100 125 150 IXGH10N60U1 IXGH10N60AU1 Fig.7 Gate Charge Fig.8 Turn-Off Safe Operating Area 15 100 V CE = 480V 13 IG = 10mA T J = 125°C 10 IC = 10A dV/dt < 3V/ns IC - Amperes VGE - Volts 11 9 7 5 1 0.1 3 1 0.01 0 10 20 30 40 50 0 100 Total Gate Charge - (nC) 200 300 400 500 600 VCE - Volts Fig.9 Capacitance Curves 800 Capacitance - pF 700 Cies f = 1MHz 600 500 400 300 200 Coes 100 Cres 0 0 5 10 15 20 25 VCE - Volts Thermal Response - K/W Fig.10 Transient Thermal Impedance 1.00 D=0.5 D=0.2 D=0.1 0.10 D=0.05 D=0.02 D=0.01 0.01 10 -5 Single Pulse 10 -4 10-3 10-2 10-1 10 0 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGH10N60U1 IXGH10N60AU1 Fig.11 Maximum Forward Voltage Drop Fig.12 40 Peak Forward Voltage VFR and Forward Recovery Time tFR 25 1000 TJ = 125°C IF = 8A 30 800 V FR 25 20 TJ = 100°C 15 TJ = 150°C 10 0 0.0 600 10 400 tfr 5 TJ = 25°C 5 15 0 0.5 1.0 1.5 2.0 2.5 0 50 100 Voltage Drop - Volts 150 200 250 200 0 300 diF/dt - A/µs Fig.13 Junction Temperature Dependence off IRM and Qr Fig.14 Reverse Recovery Charge 1.0 1.4 T J = 100°C Qr - nanocoulombs Normalized IRM / Qr 1.2 1.0 0.8 IRM 0.6 Qr 0.4 V R = 350V 0.8 IF = 8A max 0.6 0.4 0.2 0.2 0.0 0.0 0 40 80 120 160 1 10 TJ - Degrees C 1000 diF /dt - A/µs Fig.15 Peak Reverse Recovery Current Fig.16 Reverse Recovery Time 400 25 TJ = 100°C T J = 100°C VR = 350V 20 IF = 8A trr - nanoseconds IRM - Amperes 100 max 15 10 5 0 VR = 350V 300 IF = 8A 200 100 0 0 100 200 diF /dt - A/µs © 1996 IXYS All rights reserved 300 400 0 100 200 diF /dt - A/µs 300 400 tfr - nanoseconds 20 VFR - Volts Current - Amperes 35 IXGH10N60U1 IXGH10N60AU1 Fig.17 Diode Transient Thermal resistance junction to case 3.0 RthJC - K/W 2.0 1.0 0.1 0.001 0.01 0.1 1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025