IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE(sat) tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C 30 A ICM TC = 25°C, 1 ms 140 A SSOA (RBSOA) VGE= 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µH ICM = 90 @ 0.8 VCES A tSC (SCSOA) VGE= 15 V, VCE = 720 V, TJ = 125°C RG = 22 Ω, non repetitive 10 µs PC TC = 25°C 250 150 W W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Maximum Ratings 2500 V~ z 300 °C z IGBT Diode TJ VISOL 50/60 Hz, RMS = 1200 V = 70 A = 3.6 V = 180 ns t = 1 min leads-to housing Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s ISOPLUS 247TM E 153432 G G = Gate, E = Emitter 5 g E Isolated backside* C = Collector, * Patent pending Features z z Weight C z DCB Isolated mounting tab Meets TO-247AD package outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications z Symbol Test Conditions BVCES IC = 3 mA, VGE = 0 V VGE(th) IC = 250 µA, VCE = VGE ICES V CE = 0.8 • VCES V GE = 0 V IGES V CE = 0 V, VGE = ±20 V VCE(sat) IC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 V 3 6 TJ = 25°C TJ = 150°C z z z V 1 mA 3 mA ±100 nA 3.6 V = IT, VGE = 15 V z Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages z z Easy assembly High power density c Device must be heatsunk for high temperature measurements to avoid thermal runaway. IXYS reserves the right to change limits, test conditions and dimensions © 2002 IXYS All rights reserved 98741A (01/02) IXSR 35N120BD1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC= IT; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 16 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 23 S 3600 pF 315 pF Crss 75 pF Qg 120 nC 33 nC 49 nC IC = IT, VGE = 15 V, VCE = 0.5 VCES Qge Qgc td(on) Inductive load, TJ = 25°°C 36 ns tri IC = IT, VGE = 15 V, L = 100 µH, VCE = 0.8 VCES, RG = 2.7 Ω 27 ns td(off) Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG tfi Eoff td(on) 160 300 ns 180 300 ns 5 9 mJ 38 ns 29 ns 6 mJ 240 ns 340 ns 9 mJ Inductive load, TJ = 125°°C tri IC = IT, VGE = 15 V, L = 100 µH Eon VCE = 0.8 VCES, RG = 2.7 Ω td(off) Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG tfi Eoff RthJC 0.5 K/W RthCK 0.15 Reverse Diode (FRED) 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IT, VGE = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IRM t rr K/W ISOPLUS 247 OUTLINE IF = IT, VGE = 0 V, -diF/dt = 100 A/µs VR = 100 V IF = 1 A; -di/dt = 200 A/µs; VR = 30 V 7 2.75 1.85 V 14.3 A 40 RthJC ns 0.83 K/W Note: 1. IT = 35A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1