IGBT with Diode IXSN 62N60U1 VCES IC25 VCE(sat) Short Circuit SOA Capability = 600 V = 90 A = 2.5 V 3 2 4 1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 90 A IC90 TC = 90°C 50 A ICM TC = 25°C, 1 ms SSOA (RBSOA) 180 A VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH ICM = 100 @ 0.8 VCES A tSC (SCSOA) VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 W, non repetitive 10 ms PC TC = 25°C 250 W VISOL 50/60 Hz IISOL £ 1 mA 2500 3000 V~ V~ t = 1 min t=1s -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight Symbol 30 Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 3 mA, VGE = 0 V 600 VGE(th) IC = 4 mA, VCE = VGE 4 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC TJ = 25°C TJ = 125°C = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved g V 8 V 750 15 mA mA ±100 nA 2.5 V miniBLOC, SOT-227 B 1 2 4 3 1 = Emitter , 3 = Collector 2 = Gate, 4 = Emitter Either Emitter terminal can be used as Main or Kelvin Emitter Features • International standard package miniBLOC (ISOTOP) compatible • Aluminium-nitride isolation - high power dissipation • Isolation voltage 3000 V~ • Low VCE(sat) - for minimum on-state conduction losses • Fast Recovery Epitaxial Diode - short trr and IRM • Low collector-to-case capacitance (< 50 pF) - reducesd RFI • Low package inductance (< 10 nH) - easy to drive and to protect Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switch-mode and resonant-mode power supplies Advantages • Space savings • Easy to mount with 2 screws • High power density 92815I (7/00) 1-2 IXSN62N60U1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 20 C ies S 4500 pF 400 pF C res 90 pF Qg 190 250 nC 45 60 nC 88 120 nC Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 23 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 70 ns 220 ns 300 650 ns 400 700 ns 7 11 mJ miniBLOC, SOT-227 B M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 70 ns 220 ns 4 mJ P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 650 ns R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 ns T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 600 1000 9 RthJC mJ 0.50 K/W RthCK 0.05 Reverse Diode (FRED) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90, VGE = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % IRM t rr IF = IC90, VGE = 0 V, -diF/dt = 480 A/ms VR = 360 V TJ = 125°C IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25°C RthJC © 2000 IXYS All rights reserved K/W 19 175 35 1.8 V 50 A ns ns 0.80 K/W IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2