Preliminary Data Sheet IXGH32N50BU1 IXGH32N50BU1S HiPerFASTTM IGBT with Diode Combi Pack VCES IC25 VCE(sat) tfi = = = = 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 500 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C I C90 TC = 90°C I CM TC = 25°C, 1 ms 60 SSOA (RBSOA) VGE = 15 V, T VJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH PC TC = 25°C E TO-247 AD A 32 A 120 A ICM = 64 @ 0.8 VCES A 200 W C (TAB) G -55 ... +150 °C 150 °C Tstg -55 ... +150 °C 300 °C l 1.13/10 Nm/lb.in. l 4 6 g g l Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque, TO-247 AD Weight TO-247 SMD TO-247 AD C G = Gate, E = Emitter, TJM TJ C (TAB) G E C = Collector, TAB = Collector Features l l International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD High frequency IGBT and antiparallel FRED in one package High current handling capability Newest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 750µA, VGE = 0 V 500 VGE(th) IC = 250 µA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V I GES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V © 1997 IXYS All rights reserved TJ = 25°C TJ = 125°C V 5.5 V 500 8 µA mA ±100 nA 2.0 V l l l l l AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages l l l Space savings (two devices in one package) High power density Very fast switching speeds for high frequency applications 95565A (4/97) IXGH32N50BU1 IXGH32N50BU1S Symbol Test Conditions gfs I C = I C90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 20 S 15 2500 pF 270 pF Cres 70 pF Qg 125 150 nC 23 35 nC 50 75 nC Cies Coes Q ge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°°C 25 ns IC = IC90, VGE = 15 V, L = 100 µH, VCE = 0.8 V CES, RG = Roff = 4.7 Ω 30 ns 100 200 Remarks: Switching times may increase for VCE (Clamp) > 0.8 • V CES, higher TJ or increased RG 80 150 ns 0.7 1.5 mJ Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = Roff = 4.7 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG RthJC RthCK Reverse Diode (FRED) TO-247 AD Outline Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. ns 25 ns 35 ns 1 mJ 120 ns 120 ns 1.2 mJ 0.25 0.62 K/W K/W ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-247 SMD Outline Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90 , VGE = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % I RM trr IF = IC90, VGE = 0 V, -diF /dt = 240 A/µs 10 VR = 360 V TJ =125°C 150 35 IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ =25°C 1.6 V 15 A ns ns 50 1 K/W RthJC Min. Recommended Footprint (Dimensions in inches and (mm)) 1. Gate 2. Collector 3. Emitter 4. Collector Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.83 2.29 1.91 5.21 2.54 2.16 .190 .090 .075 .205 .100 .085 b b1 1.14 1.91 1.40 2.13 .045 .075 .055 .084 C D E e L L1 L2 L3 L4 ØP Q R S 0.61 20.80 15.75 5.45 4.90 2.70 2.10 0.00 1.90 3.55 5.59 4.32 6.15 0.80 21.34 16.13 BSC 5.10 2.90 2.30 0.10 2.10 3.65 6.20 4.83 BSC .024 .819 .620 .215 .193 .106 .083 .00 .075 .140 .220 .170 .242 .031 .840 .635 BSC .201 .114 .091 .004 .083 .144 .244 .190 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025