IXYS IXGH32N50BU1S

Preliminary Data Sheet
IXGH32N50BU1
IXGH32N50BU1S
HiPerFASTTM IGBT
with Diode
Combi Pack
VCES
IC25
VCE(sat)
tfi
=
=
=
=
500 V
60 A
2.0 V
80 ns
TO-247 SMD
(32N50BU1S)
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
500
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
500
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
I C25
TC = 25°C
I C90
TC = 90°C
I CM
TC = 25°C, 1 ms
60
SSOA
(RBSOA)
VGE = 15 V, T VJ = 125°C, RG = 33 Ω
Clamped inductive load, L = 100 µH
PC
TC = 25°C
E
TO-247 AD
A
32
A
120
A
ICM = 64
@ 0.8 VCES
A
200
W
C (TAB)
G
-55 ... +150
°C
150
°C
Tstg
-55 ... +150
°C
300
°C
l
1.13/10
Nm/lb.in.
l
4
6
g
g
l
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque, TO-247 AD
Weight
TO-247 SMD
TO-247 AD
C
G = Gate,
E = Emitter,
TJM
TJ
C (TAB)
G
E
C = Collector,
TAB = Collector
Features
l
l
International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
High frequency IGBT and antiparallel
FRED in one package
High current handling capability
Newest generation HDMOSTM process
MOS Gate turn-on
- drive simplicity
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES
IC
= 750µA, VGE = 0 V
500
VGE(th)
IC
= 250 µA, VCE = VGE
2.5
ICES
VCE = 0.8 • VCES
VGE = 0 V
I GES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
= IC90, VGE = 15 V
© 1997 IXYS All rights reserved
TJ = 25°C
TJ = 125°C
V
5.5
V
500
8
µA
mA
±100
nA
2.0
V
l
l
l
l
l
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
l
l
l
Space savings (two devices in one
package)
High power density
Very fast switching speeds for high
frequency applications
95565A (4/97)
IXGH32N50BU1 IXGH32N50BU1S
Symbol
Test Conditions
gfs
I C = I C90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
20
S
15
2500
pF
270
pF
Cres
70
pF
Qg
125
150
nC
23
35
nC
50
75
nC
Cies
Coes
Q ge
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°°C
25
ns
IC = IC90, VGE = 15 V, L = 100 µH,
VCE = 0.8 V CES, RG = Roff = 4.7 Ω
30
ns
100
200
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • V CES,
higher TJ or increased RG
80
150
ns
0.7
1.5
mJ
Inductive load, TJ = 125°°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
RthJC
RthCK
Reverse Diode (FRED)
TO-247 AD Outline
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ns
25
ns
35
ns
1
mJ
120
ns
120
ns
1.2
mJ
0.25
0.62 K/W
K/W
∅P
e
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
2.2
2.6
A2
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-247 SMD Outline
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
VF
IF = IC90 , VGE = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I RM
trr
IF = IC90, VGE = 0 V, -diF /dt = 240 A/µs
10
VR = 360 V
TJ =125°C 150
35
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ =25°C
1.6
V
15
A
ns
ns
50
1 K/W
RthJC
Min. Recommended Footprint (Dimensions in inches and (mm))
1. Gate
2. Collector
3. Emitter
4. Collector
Dim.
Millimeter
Min.
Max.
Inches
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190
.090
.075
.205
.100
.085
b
b1
1.14
1.91
1.40
2.13
.045
.075
.055
.084
C
D
E
e
L
L1
L2
L3
L4
ØP
Q
R
S
0.61
20.80
15.75
5.45
4.90
2.70
2.10
0.00
1.90
3.55
5.59
4.32
6.15
0.80
21.34
16.13
BSC
5.10
2.90
2.30
0.10
2.10
3.65
6.20
4.83
BSC
.024
.819
.620
.215
.193
.106
.083
.00
.075
.140
.220
.170
.242
.031
.840
.635
BSC
.201
.114
.091
.004
.083
.144
.244
.190
BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025