IXYS IXGT28N60BD1

Low VCE(sat)
IGBT with Diode
IXGH 28N60BD1
IXGT 28N60BD1
VCES = 600 V
= 40 A
IC25
VCE(sat) = 2.0 V
Preliminary data
Symbol
Test Conditions
Maximum Ratings
VCES
T J = 25°C to 150°C
600
V
VCGR
T J = 25°C to 150°C; RGE = 1 MW
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
40
A
IC90
TC = 90°C
28
A
ICM
TC = 25°C, 1 ms
80
A
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 10 W
Clamped inductive load, L = 100 mH
ICM = 56
@ 0.8 VCES
A
PC
TC = 25°C
150
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
Md
Mounting torque (M3) TO-247
Weight
TO-247
TO-268
G
E
C (TAB)
TO-247 AD
(IXGH)
G
C
E
1.13/10 Nm/lb.in.
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
TO-268
(IXGT)
300
°C
6
4
g
g
G = Gate,
E = Emitter,
TAB
C = Collector,
TAB = Collector
Features
• International standard packages
• IGBT and anti-parallel FRED in one
package
• Low VCE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES
IC
= 750 mA, VGE = 0 V
600
VGE(th)
IC
= 250 mA, VCE = VGE
2.5
ICES
VCE = 0.8 • VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
TJ = 25°C
TJ = 125°C
= IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
V
5.5
V
200
3
mA
mA
±100
nA
2.0
V
•
•
•
•
•
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
• Space savings (two devices in one
package)
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Reduces assembly time and cost
• High power density
98567A (7/00)
1-2
IXGH 28N60BD1
IXGT 28N60BD1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
9
C ies
S
1500
pF
170
pF
C res
40
pF
Qg
80
100
nC
15
30
nC
30
40
nC
Coes
Qge
VCE = 25 V, VGE = 0 V, f = 1 MHz
14
IC
= IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
Inductive load, TJ = 25°C
15
ns
t ri
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 10 W
25
ns
td(off)
tfi
Eoff
td(on)
t ri
Eon
td(off)
tfi
Eoff
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive load, TJ = 125°C
IC
= IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Reverse Diode (FRED)
Symbol
Test Conditions
ns
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
200
400
ns
3
6
mJ
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
G
H
1.65 2.13
4.5
0.065 0.084
0.177
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
15
ns
25
ns
1
mJ
400
ns
400
ns
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
6
mJ
N
1.5 2.49
0.087 0.102
0.25
IF = IC90, VGE = 0 V,
TJ = 150°C
Pulse test, t £ 300 ms, duty cycle d £ 2 % TJ = 25°C
IRM
t rr
IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms
VR = 100 V
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V
K/W
TJ = 100°C
TJ = 25°C
1.6
2.5
6
100
25
V
V
A
ns
ns
Dim.
1 K/W
Min. Recommended Footprint
© 2000 IXYS All rights reserved
TO-268AA (D3 PAK)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
RthJC
Inches
Min. Max.
400
0.83 K/W
TO-247
Dim. Millimeter
Min. Max.
200
RthJC
RthCK
TO-247 AD (IXGH) Outline
A
A1
A2
b
b2
C
D
E
E1
e
H
L
L1
L2
L3
L4
Millimeter
Min. Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
2-2