MIO 1200-25E10 Advanced Technical Information IC80 = 1200 A = 2500 V VCES VCE(sat) typ. = 2.5 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C C C E E E C' G E' Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES 2500 V ± 20 V IC80 TC = 80°C 1200 A ICM tp = 1 ms; TC = 80°C 2400 A tSC VCC = 1800 V; VCEM CHIP = < 2500 V; VGE < 15 V; TVJ < 125°C 10 µs Symbol Conditions VCE(sat) ① IC = 1200 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C Typical Applications Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.5 3.1 6 3.4 V V 7.5 V VGE(th) IC = 240 mA; VCE = VGE ICES VCE = 2500 V; VGE = 0 V; TVJ = 125°C 120 mA IGES VCE = 0 V; VGE = ± 20 V; TVJ = 125°C 500 nA td(on) tr td(off) tf Eon Eoff • NPT³ IGBT - Low-loss - Smooth switching waveforms for good EMC • Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance Inductive load; TVJ = 125°C; VGE = ±15 V; VCC = 1250V; IC = 1200A; RG = 1.5Ω; Lσ = 100nH 365 250 980 345 1150 1250 ns ns ns ns mJ mJ Cies Coes Cres VCE = 25 V; VGE = 0 V; f = 1 MHz 186 13.7 3.0 nF nF nF Qge IC = 1200 A; VCE = 1250 V; VGE = ± 15 V 12.2 µC RthJC • AC power converters for - industrial drives - windmills - traction • LASER pulse generator 0.009 K/W IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 416 ① Collector emitter saturation voltage is given at chip level 1-6 Advanced Technical Information MIO 1200-25E10 Diode Symbol Conditions Maximum Ratings IF80 TC = 80°C IFSM VR = 0 V; TVJ = 125°C; tp = 10 ms; half-sinewave Symbol Conditions VF ② IF = 1200 A; IRM trr QRR Erec VCC = 1250 V; IC = 1200 A; VGE = ±15 V; RG = 1.5 Ω; TVJ = 125°C Inductive load; Lσ = 100nH 1200 A 11000 A Characteristic Values min. typ. max. TVJ = 25°C TVJ = 125°C 1.75 1.8 V V 1180 970 1150 990 A ns µC mJ RthJC 0.017 K/W ② Forward voltage is given at chip level Module Symbol Conditions Maximum Ratings TJM TVJ Tstg max. junction temperature Operating temperature Storage temperature VISOL 50 Hz Md Mounting torque Symbol Conditions dA Clearance distance terminal to base terminal to terminal 23 19 mm mm dS Surface creepage distance terminal to base terminal to terminal 33 33 mm mm Lσ Module stray inductance, C to E terminal Rterm-chip *) RthCH +150 -40...+125 -40...+125 °C °C °C 5000 V~ 4-6 8 - 10 Nm Nm Base-heatsink, M6 screws Main terminals, M8 screws Characteristic Values min. typ. max. 10 nH Resistance terminal to chip 0.085 mΩ per module; λ grease = 1 W/m•K 0.006 K/W 1500 g Weight 416 *) V = VCE(sat) + Rterm-chip · IC resp. V = VF + Rterm-chip · IF 2-6 © 2004 IXYS All rights reserved MIO 1200-25E10 Advanced Technical Information 2400 2400 2200 17 V 2200 2000 15 V 2000 1800 13 V 1800 11 V 1600 11 V 1400 9V 1600 IC [A] IC [A] 1400 1200 17 V 15 V 13 V 1200 1000 1000 800 800 600 600 9V 400 400 200 200 Tvj = 25°C 0 Tvj = 125 °C 0 0 1 2 3 4 5 6 0 1 2 3 VCE [V] 4 5 6 VCE [V] Fig. 1 Typical output characteristics, chip level Fig. 2 Typical output characteristics, chip level 2400 2400 2200 2200 2000 2000 25 °C 1800 125 °C 1600 1600 1400 1400 IC [A] IC [A] 1800 1200 1200 1000 1000 800 800 600 600 400 400 200 125 °C 25 °C 200 VGE = 15 V 0 0 0 1 2 3 4 5 0 1 2 3 4 VCE [V] 5 6 7 8 9 10 11 12 13 VGE [V] Fig. 3 Typical onstate characteristics, chip level Fig. 4 Typical transfer characteristics, chip level 1000 20 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV Cies VCC = 1250 15 100 C [nF] VGE [V] VCC = 1750 10 Coes 10 Cres 5 IC = 1200 A Tvj = 25 °C 0 1 2 4 6 Qg [µC] 8 10 Fig. 5 Typical gate charge characteristics © 2004 IXYS All rights reserved 12 0 5 10 15 20 VCE [V] Fig. 6 Typical capacitances vs collector-emitter voltage 25 30 35 416 0 3-6 MIO 1200-25E10 Advanced Technical Information 3.5 6.0 VCC = 1250 V R G = 1.5 ohm VGE = ±15 V Tvj = 125 °C Lσ = 100 nH 3.0 2.5 VCC = 1250 V IC = 1200 A VGE = ±15 V Tvj = 125 °C Lσ = 100 nH 5.0 E on Eon, Eoff [J] E on , E off [J] 4.0 2.0 E off 1.5 Eon 3.0 2.0 1.0 Eoff 1.0 0.5 0.0 0.0 0 1000 2000 3000 0 5 IC [A] Fig. 7 Typical switching energies per pulse vs collector current 15 20 Fig. 8 Typical switching energies per pulse vs gate resistor 10 10 VCC = 1250 V IC = 1200 A VGE = ±15 V Tvj = 125 °C Lσ = 100 nH td(off) 1 td(off) td(on) tf td(on), tr, td(off), tf td(on), tr, td(off), tf [µs] 10 RG [ohm] td(on) tr 1 0.1 tr tf VCC = 1250 V RG = 1.5 ohm VGE = ±15 V Tvj = 125 °C Lσ = 100 nH 0.01 0.1 0 500 1000 1500 2000 2500 0 5 IC [A] 10 15 20 RG [ohm] Fig. 9 Typical switching timesvs collector current Fig. 10 Typical switching timesvs gate resistor 2.5 2400 VCC ≤ 1800 V 2200 2000 2 1800 25 °C 1600 125 °C 1400 IF [A] ICpulse / IC 1.5 1200 1000 1 800 600 400 0.5 200 IC, Chip IC, Module 0 0 0 500 1000 1500 VCE [V] 2000 2500 3000 Fig. 11 Turn-off safe operating area (RBSOA) 4-6 0.5 1 1.5 2 2.5 VF [V] Fig. 12 Typical diode forward characteristics, chip level 416 0 © 2004 IXYS All rights reserved MIO 1200-25E10 Advanced Technical Information 1600 1200 1600 Q RR VCC = 1250 V IC = 1200 A VGE = ±15 V Tvj = 125 °C Lσ = 100 nH 1100 1400 1000 900 E rec 1200 800 1000 1000 800 600 200 QRR 600 800 Erec 500 600 VCC = 1250 V R G = 1.5 ohm VGE = ±15 V T vj = 125 °C Lσ = 100 nH 400 700 IRM [A], QRR [µC] IRM Erec [mJ] E rec [mJ], I RM [A], Q RR [µC] 1200 1400 400 IRM 300 400 200 200 100 0 0 0 500 1000 1500 2000 0 0 2500 5 10 IF [A] 15 20 RG [ohm] Fig. 13 Typical reverse recovery characteristics vs forward current Fig. 14 Typical reverse recovery characteristics vs gate resistor 0.1 n Zth JC(t) = ∑ Ri(1 - e -t/τ i ) 0.01 i =1 0.001 0.0001 0.001 0.01 0.1 t [s] 1 i 1 2 3 4 IGBT Zth(j-c) IGBT Ri(K/kW) 5.97 1.99 0.619 0.465 τi(ms) 179 22 2.4 0.54 DIODE Zth(j-h) [K/W] IGBT, DIODE Zth(j-c) Diode Ri(K/kW) 11.1 3.36 1.27 1.34 τi(ms) 189 30 7.4 1.4 10 416 Fig. 15 Thermal impedance vs time © 2004 IXYS All rights reserved 5-6 Advanced Technical Information MIO 1200-25E10 Outline drawing ' ' 416 Note: all dimensions are shown in mm 6-6 © 2004 IXYS All rights reserved