MIO 600-65E11 IC80 = 600 A = 6500 V VCES VCE(sat) typ = 4.2 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C' C C C 5 7 9 E E E 4 6 8 3 G 2 E' 1 Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES IC85 TC = 85°C ICM tp = 1 ms; TC = 85°C tSC VCC = 4400 V; VCEM CHIP = < 6500 V; VGE < 15 V; TVJ < 125°C 6500 V ± 20 V 600 A 1200 A 10 µs • NPT³ IGBT - Low-loss - Smooth switching waveforms for good EMC • Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance Typical Applications Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) ① IC = 600 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 240 mA; VCE = VGE ICES VCE = 6500 V; VGE = 0 V; TVJ = 125°C 120 mA IGES VCE = 0 V; VGE = ± 20 V; TVJ = 125°C 500 nA td(on) tr td(off) tf Eon Eoff RG = 3.9 Ω RG = 3.9 Ω Inductive load; TVJ = 125°C; R = 2.7 Ω G VGE = ±15 V; VCC = 3600 V; R = 2.7 Ω G IC = 600 A; Lσ = 280 nH RG = 3.9 Ω RG = 2.7 Ω 620 270 1500 930 4250 3250 ns ns ns ns mJ mJ Cies Coes C res VCE = 25 V; VGE = 0 V; f = 1 MHz 150 7.57 1.46 nF nF nF Qge IC = 600 A; VCE = 3600 V; VGE = ± 15 V 9.65 µC 4.2 5.4 6 RthJC • AC power converters for - industrial drives - windmills - traction • LASER pulse generator V V 8 V 0.011 K/W IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 0547 ① Collector emitter saturation voltage is given at chip level 1-5 MIO 600-65E11 Diode Symbol Conditions Maximum Ratings IF80 TC = 80°C IFSM VR = 0 V; TVJ = 125°C; tp = 10 ms; half-sinewave Symbol Conditions VF ② IF = 600 A; IRM trr QRR Erec VCC = 3600 V; IC = 600 A; VGE = ±15 V; RG = 3.9 Ω; TVJ = 125°C Inductive load; Lσ = 280 nH 600 A 6000 A Characteristic Values min. typ. max. TVJ = 25°C TVJ = 125°C 3.2 3.4 V V 930 2200 1150 2100 A ns µC mJ RthJC 0.021 K/W ② Forward voltage is given at chip level Symbol Conditions Maximum Ratings TJM TVJ Tstg max junction temperature Operatingtemperature Storage temperature VISOL 50 Hz, 1 min Md Mounting torque Symbol Conditions dA Clearance distance terminal to base IEC 60664-1 / EN 50124-1 terminal to terminal 40 26 mm mm dS Surface creepage dist. terminal to base IEC 60664-1 / EN 50124-1 terminal to terminal 64 56 mm mm VE Partial discharge extinction voltage f = 50 Hz, QPD ≤ 10pC (IEC 61287) 5100 V +125 -40...+125 -40...+125 °C °C °C 10200 V~ Base-heatsink, M6 screws Main terminals, M8 screws Auxiliary terminals, M4 screws CTI Comperative tracking index Lσ Module stray inductance, C to E terminal Rterm-chip * Resistance terminal to chip RthCH per module; λ grease = 1 W/m•K Characteristic Values min. typ. max. 600 18 nH 0.12 mΩ 0.006 K/W 1760 g 0547 Weight 4 - 6 Nm 8 - 10 Nm 2 - 3 Nm © 2005 IXYS All rights reserved 2-5 MIO 600-65E11 1200 1200 1000 1000 17V 15V 13V 17V 800 15V 13V 600 IC [A] IC [A] 800 11V 11V 600 400 400 9V 200 200 9V Tvj = 25 °C Tvj = 125 °C 0 0 0 1 2 3 4 5 6 7 0 8 1 2 3 4 5 6 7 8 9 10 VCE [V] VCE [V] Fig. 1 Typical output characteristics, chip level Fig. 2 Typical output characteristics, chip level 1200 1200 VCE = 20 V 1000 1000 25 °C 800 800 IC [A] IC [A] 125 °C 600 400 600 400 25 °C 125 °C 200 200 VGE = 15V 0 0 0 1 2 3 4 5 6 7 8 0 1 2 3 4 VCE [V] Fig. 3 5 6 7 8 9 10 11 12 13 VGE [V] Typical on-state characteristics, chip level Fig. 4 Typical transfer characteristics, chip level 1000 20 VGE = 0V fOSC = 1 MHz VOSC = 50 mV VCC = 3600 V Cies 15 100 C [nF] VGE [V] VCC = 4400 V 10 Coes 10 5 Cres IC = 600 A Tvj = 25 °C 0 1 1 2 3 4 5 Qg [µC] 6 7 8 9 Fig. 5 Typical gate charge characteristics © 2005 IXYS All rights reserved 0 5 10 15 20 VCE [V] 25 30 35 Fig. 6 Typical capacitances vs collector-emitter voltage 0547 0 3-5 MIO 600-65E11 20 12 VCC = 3600V RGon = 3.9 ohm RGoff = 2.7 ohm VGE = ±15V Tvj = 125 °C Ls = 280 nH Eon, E off [J] 8 6 16 14 Eon, E off [J] 10 VCC = 3600 V IC = 600A VGE = ±15 V Tvj = 125 °C Lσ = 280 nH 18 Eon Eoff 4 12 Eon 10 8 6 Eoff 4 2 2 E sw [J] = 4.5 x 10 -6 2 x I C + 8.6 x 10 -3 x I C + 0.61 0 0 0 300 600 900 0 1200 10 20 Fig. 7 Typical switching energies per pulse versus collector current 40 Fig. 8 Typical switching energies per pulse versus gate resistor 10 10 td(off) VCC = 3600 V RGon = 3.9 ohm RGoff = 2.7 ohm VGE = ±15 V Tvj = 125 °C Lσ = 280 nH td(on) td(on), t r, t d(off), t f [µs] td(off) td(on) tr, t d(off), t f [µs] 30 RG [ohm] IC [A] 1 tf tr 1 tf td(on) VCC = 3600 V IC = 600 A VGE = ±15 V Tvj = 125 °C Lσ = 280 nH tr 0.1 0.1 0 300 600 900 1200 0 10 IC [A] 20 30 40 RG [ohm] Fig. 9 Typical switching times vs. collector current Fig. 10 2.5 Typical switching times vs. gate resistor 1200 VCC ≤ 4400 V, Tvj = 125 °C, VGE = ±15 V RGoff = 2.7 ohm, Lσ ≤ 280 nH 1000 2 25 °C 800 125 °C IF [A] ICpulse / IC 1.5 1 600 400 200 0.5 Chip Module 0 0 0 1000 2000 3000 4000 VCE [V] 5000 6000 7000 Fig. 11 Turn-off safe operating area (RBSOA) 1 2 3 4 5 VF [V] Fig. 12 Typ. diode forward characteristics, chip level © 2005 IXYS All rights reserved 0547 0 4-5 Fig. 14 Typical diode forward characteristics, chip level MIO 600-65E11 3000 2500 RG = 27 ohm Irr 500 500 E rec [mJ] = -1.8 x 10 -3 2 x I F + 3.93 x I F + 403 0 RG = 15 ohm Irr 1000 RG = 5.6 ohm Erec 1000 RG = 8.2 ohm Qrr 1500 Erec [mJ] 1500 1000 800 600 400 VCC = 3600 V IF = 600 A Tvj = 125 °C Lσ = 280 nH 200 0 0 300 600 900 1200 Qrr [µC], Irr [A] 2000 RG = 2.2 ohm Qrr 2000 RG = 2.7 ohm Erec RG = 3.9 ohm 2500 Erec [mJ], Q rr [µC], Irr [A] 1200 VCC = 3600 V RG = 3.9 ohm Tvj = 125 °C Lσ = 280 nH 0 0 1 IF [A] 2 3 4 di/dt [kA/µs] Fig. 13 Typ. reverse recovery characteristics versus forward current Fig. 14 Typ. reverse recovery characteristics versus di/dt 0.1 1400 VCC ≤ 4400 V di/dt ≤ 4000 A/µs Tvj = 125 °C Lσ ≤ 280 nH 1200 Zth(j-c) Diode Zth(j-h) [K/W] IGBT, DIODE 1000 IR [A] 800 600 400 0.01 Zth(j-c) IGBT 0.001 200 0 0 1000 2000 3000 4000 5000 6000 7000 VR [V] Fig. 15 Safe operating area diode (SOA) 0.0001 0.001 0.01 0.1 t [s] 1 10 Fig. 16 Thermal impedance vs. time n Z th (j-c) (t) = ∑ R i (1 - e -t/τ i ) i =1 Outline drawing i 1 2 Ri [K/kW] ti [ms] 8.5 151 2 5.84 DIODE Ri [K/kW] ti [ms] 17 144 4.2 5.83 0547 IGBT © 2005 IXYS All rights reserved 5-5