MWI 100-12 E8 MKI 100-12 E8 IC25 = 165 A = 1200 V VCES VCE(sat) typ. = 2.0 V IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13, 21 13, 21 1 5 9 1 9 2 6 10 2 10 3 7 11 4 14, 20 8 12 3 4 14, 20 12 19 17 15 MWI 19 15 11 MKI Features IGBTs Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES 1200 V ± 20 V IC25 IC80 TC = 25°C TC = 80°C 165 115 A A ICM VCEK VGE = ±15 V; RG = 12 Ω; TVJ = 125°C RBSOA; clamped inductive load; L = 100 µH 200 VCES A tSC VCE = 900 V; VGE = ±15 V; RG = 12 Ω; TVJ = 125°C SCSOA; non-repetitive 10 µs Ptot TC = 25°C 640 W Symbol Conditions VCE(sat) IC = 100 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 4 mA; VGE = VCE ICES VCE = VCES; • NPT3 IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits • HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current • Industry Standard Package - solderable pins for PCB mounting - isolated copper base plate Typical Applications td(on) tr td(off) tf Eon Eoff 2.0 2.3 4.5 VGE = 0 V; TVJ = 25°C TVJ = 125°C 2.5 V V 6.5 V 1.4 mA mA 400 nA 1.4 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 100 A VGE = ±15 V; RG = 12 Ω 330 15 750 45 12 10 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 150 A 7.4 0.76 nF µC RthJC (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved • MWI - AC drives - power supplies with power factor correction • MKI - motor control . DC motor amature winding . DC motor excitation winding . synchronous motor excitation winding - supply of transformer primary winding . power supplies . welding . X-ray . battery charger 0.19 K/W 448 IGES Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1-4 MWI 100-12 E8 MKI 100-12 E8 Diodes Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C 200 130 Symbol Conditions Characteristic Values min. typ. max. VF IF = 100 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C 2.3 1.7 IRM trr IF = 120 A; diF/dt = -750 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V 58 190 RthJC (per diode) Conduction A A 2.6 V V A ns 0.3 K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.95 V; R0 = 14 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.3 V; R0 = 7 mΩ Thermal Response Module Symbol Conditions TVJ TJM Tstg operating VISOL Maximum Ratings -40...+125 +150 -40...+125 °C °C °C IISOL ≤ 1 mA; 50/60 Hz 2500 V~ Md Mounting torque (M5) 2.7 - 3.3 Nm Symbol Conditions Characteristic Values min. typ. max. Rpin-chip 1.8 dS dA Creepage distance on surface Strike distance in air RthCH with heatsink compound 10 10 Weight IGBT (typ.) Cth1 = 0.389 J/K; Rth1 = 0.139 K/W Cth2 = 2.154 J/K; Rth2 = 0.051 K/W Free Wheeling Diode (typ.) Cth1 = 0.301 J/K; Rth1 = 0.24 K/W Cth2 = 2.005 J/K; Rth2 = 0.062 K/W mΩ mm mm 0.01 K/W 300 g Dimensions in mm (1 mm = 0.0394") IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 448 pins 5, 6, 7, 8 and 17 for MWI only 2-4 MWI 100-12 E8 MKI 100-12 E8 300 300 A 250 13 V VGE = 17 V A 15 V 250 11 V TVJ = 25°C IC 13 V IC TVJ = 125°C 200 200 150 150 100 11 V 100 9V 9V 50 50 0 0 0 1 2 3 4 V 0 5 1 2 3 VCE 5 Fig. 2 Typ. output characteristics 300 A 250 300 VCE = 20 V A V 4 VCE Fig. 1 Typ. output characteristics 250 IC 15 V VGE = 17 V IF 200 200 150 150 TVJ = 125°C 100 100 TVJ = 125°C 50 50 TVJ = 25°C TVJ = 25°C 0 0 5 6 7 8 9 V 0 10 1 2 Fig. 3 Typ. transfer characteristics V Fig. 4 Typ. forward characteristics of free wheeling diode 20 90 300 A 250 60 200 ns VCE = 600 V IC = 150 A V 3 VF VGE 15 IRM VGE trr trr 150 10 TVJ = 125°C VR = 600 V IF = 120 A 30 5 100 50 IRM MWI100-12E8 0 0 200 400 600 800 nC 1000 QG Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 0 200 400 600 800 A/µs 0 1000 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 448 0 3-4 MWI 100-12 E8 MKI 100-12 E8 40 mJ Eon 400 20 ns mJ ns 16 800 td(on) 30 300 t VCE = 600 V VGE = ±15 V Eon 4 0 50 100 A 150 400 200 Eoff tr 0 600 RG = 12 Ω TVJ = 125°C 8 100 t VCE = 600 V VGE = ±15 V 200 10 0 td(off) Eoff 12 RG = 12 Ω TVJ = 125°C 20 1000 tf 0 200 0 50 100 A 150 IC 0 200 IC Fig. 7 Typ. turn on energy and switching times versus collector current 16 Fig. 8 Typ. turn off energy and switching times versus collector current 16 400 ns mJ td(on) Eon 12 300 td(off) mJ t Eoff 12 1000 ns 750 t Eoff 8 4 8 200 VCE = 600 V VGE = ±15 V IC = 100 A TVJ = 125°C Eon 500 VCE = 600 V VGE = ±15 V IC = 100 A TVJ = 125°C 4 100 250 tf tr 0 0 5 10 15 Ω 0 0 20 0 0 5 10 RG Ω 20 15 RG Fig. 9 Typ. turn on energy and switching times versus gate resistor Fig.10 Typ. turn off energy and switching times versus gate resistor 250 1 A K/W 200 diode IGBT 0.1 ICM ZthJC 150 0.01 100 0 0 200 400 single pulse 0.001 600 800 1000 1200 1400 V VCE Fig. 11 Reverse biased safe operating area RBSOA IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 0.0001 0.0001 MWI100-12E8 0.001 0.01 0.1 1 s 10 t Fig. 12 Typ. transient thermal impedance 448 RG = 12 Ω TVJ = 125°C 50 4-4