IXYS L486

MWI 100-12 E8
MKI 100-12 E8
IC25
= 165 A
= 1200 V
VCES
VCE(sat) typ. = 2.0 V
IGBT Modules
Sixpack, H Bridge
Short Circuit SOA Capability
Square RBSOA
13, 21
13, 21
1
5
9
1
9
2
6
10
2
10
3
7
11
4
14, 20
8
12
3
4
14, 20
12
19
17
15
MWI
19
15
11
MKI
Features
IGBTs
Symbol
Conditions
Maximum Ratings
VCES
TVJ = 25°C to 150°C
VGES
1200
V
± 20
V
IC25
IC80
TC = 25°C
TC = 80°C
165
115
A
A
ICM
VCEK
VGE = ±15 V; RG = 12 Ω; TVJ = 125°C
RBSOA; clamped inductive load; L = 100 µH
200
VCES
A
tSC
VCE = 900 V; VGE = ±15 V; RG = 12 Ω; TVJ = 125°C
SCSOA; non-repetitive
10
µs
Ptot
TC = 25°C
640
W
Symbol
Conditions
VCE(sat)
IC = 100 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
VGE(th)
IC = 4 mA; VGE = VCE
ICES
VCE = VCES;
• NPT3 IGBTs
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance also in resonant circuits
• HiPerFREDTM diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
• Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
Typical Applications
td(on)
tr
td(off)
tf
Eon
Eoff
2.0
2.3
4.5
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
2.5
V
V
6.5
V
1.4
mA
mA
400
nA
1.4
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 100 A
VGE = ±15 V; RG = 12 Ω
330
15
750
45
12
10
ns
ns
ns
ns
mJ
mJ
Cies
QGon
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 150 A
7.4
0.76
nF
µC
RthJC
(per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
• MWI
- AC drives
- power supplies with power factor
correction
• MKI
- motor control
. DC motor amature winding
. DC motor excitation winding
. synchronous motor excitation winding
- supply of transformer primary winding
. power supplies
. welding
. X-ray
. battery charger
0.19 K/W
448
IGES
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
1-4
MWI 100-12 E8
MKI 100-12 E8
Diodes
Equivalent Circuits for Simulation
Symbol
Conditions
Maximum Ratings
IF25
IF80
TC = 25°C
TC = 80°C
200
130
Symbol
Conditions
Characteristic Values
min.
typ. max.
VF
IF = 100 A; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
2.3
1.7
IRM
trr
IF = 120 A; diF/dt = -750 A/µs; TVJ = 125°C
VR = 600 V; VGE = 0 V
58
190
RthJC
(per diode)
Conduction
A
A
2.6
V
V
A
ns
0.3 K/W
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 0.95 V; R0 = 14 mΩ
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.3 V; R0 = 7 mΩ
Thermal Response
Module
Symbol
Conditions
TVJ
TJM
Tstg
operating
VISOL
Maximum Ratings
-40...+125
+150
-40...+125
°C
°C
°C
IISOL ≤ 1 mA; 50/60 Hz
2500
V~
Md
Mounting torque (M5)
2.7 - 3.3
Nm
Symbol
Conditions
Characteristic Values
min.
typ. max.
Rpin-chip
1.8
dS
dA
Creepage distance on surface
Strike distance in air
RthCH
with heatsink compound
10
10
Weight
IGBT (typ.)
Cth1 = 0.389 J/K; Rth1 = 0.139 K/W
Cth2 = 2.154 J/K; Rth2 = 0.051 K/W
Free Wheeling Diode (typ.)
Cth1 = 0.301 J/K; Rth1 = 0.24 K/W
Cth2 = 2.005 J/K; Rth2 = 0.062 K/W
mΩ
mm
mm
0.01
K/W
300
g
Dimensions in mm (1 mm = 0.0394")
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
448
pins 5, 6, 7, 8 and 17 for MWI only
2-4
MWI 100-12 E8
MKI 100-12 E8
300
300
A
250
13 V
VGE = 17 V
A
15 V
250
11 V
TVJ = 25°C
IC
13 V
IC
TVJ = 125°C
200
200
150
150
100
11 V
100
9V
9V
50
50
0
0
0
1
2
3
4
V
0
5
1
2
3
VCE
5
Fig. 2 Typ. output characteristics
300
A
250
300
VCE = 20 V
A
V
4
VCE
Fig. 1 Typ. output characteristics
250
IC
15 V
VGE = 17 V
IF
200
200
150
150
TVJ = 125°C
100
100
TVJ = 125°C
50
50
TVJ = 25°C
TVJ = 25°C
0
0
5
6
7
8
9
V
0
10
1
2
Fig. 3 Typ. transfer characteristics
V
Fig. 4 Typ. forward characteristics
of free wheeling diode
20
90
300
A
250
60
200
ns
VCE = 600 V
IC = 150 A
V
3
VF
VGE
15
IRM
VGE
trr
trr
150
10
TVJ = 125°C
VR = 600 V
IF = 120 A
30
5
100
50
IRM
MWI100-12E8
0
0
200
400
600
800 nC 1000
QG
Fig. 5 Typ. turn on gate charge
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
0
200
400
600
800
A/µs
0
1000
-di/dt
Fig. 6 Typ. turn off characteristics
of free wheeling diode
448
0
3-4
MWI 100-12 E8
MKI 100-12 E8
40
mJ
Eon
400
20
ns
mJ
ns
16
800
td(on)
30
300
t
VCE = 600 V
VGE = ±15 V
Eon
4
0
50
100
A
150
400
200
Eoff
tr
0
600
RG = 12 Ω
TVJ = 125°C
8
100
t
VCE = 600 V
VGE = ±15 V
200
10
0
td(off)
Eoff
12
RG = 12 Ω
TVJ = 125°C
20
1000
tf
0
200
0
50
100
A
150
IC
0
200
IC
Fig. 7 Typ. turn on energy and switching
times versus collector current
16
Fig. 8 Typ. turn off energy and switching
times versus collector current
16
400
ns
mJ
td(on)
Eon 12
300
td(off)
mJ
t
Eoff 12
1000
ns
750
t
Eoff
8
4
8
200
VCE = 600 V
VGE = ±15 V
IC = 100 A
TVJ = 125°C
Eon
500
VCE = 600 V
VGE = ±15 V
IC = 100 A
TVJ = 125°C
4
100
250
tf
tr
0
0
5
10
15
Ω
0
0
20
0
0
5
10
RG
Ω 20
15
RG
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
Fig.10 Typ. turn off energy and switching
times versus gate resistor
250
1
A
K/W
200
diode
IGBT
0.1
ICM
ZthJC
150
0.01
100
0
0
200
400
single pulse
0.001
600
800 1000 1200 1400 V
VCE
Fig. 11 Reverse biased safe operating area
RBSOA
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
0.0001
0.0001
MWI100-12E8
0.001
0.01
0.1
1
s 10
t
Fig. 12 Typ. transient thermal impedance
448
RG = 12 Ω
TVJ = 125°C
50
4-4