MWI 30-06 A7 MWI 30-06 A7T IGBT Modules Sixpack IC25 = 45 A VCES = 600 V VCE(sat) typ. = 1.9 V Short Circuit SOA Capability Square RBSOA 13 1 2 Preliminary Data Type: NTC - Option: MWI 30-06 A7 MWI 30-06 A7T without NTC with NTC 5 6 9 10 T NTC 16 15 14 3 4 7 8 11 12 T 17 IGBTs Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate l Conditions VCES TVJ = 25°C to 150°C Maximum Ratings 600 V ± 20 V 45 30 A A ICM = 60 VCEK ≤ VCES A 10 µs VGES IC25 IC80 TC = 25°C TC = 80°C RBSOA VGE = ±15 V; RG = 33 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 33 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C l l l l l l l l l l Advantages 140 W l l Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 30 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 0.7 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES VCE = 0 V; VGE = ± 20 V td(on) tr td(off) tf Eon Eoff 1.9 2.2 4.5 2.4 V V 6.5 V 0.6 mA mA 200 nA 0.5 Inductive load, TVJ = 125°C VCE = 300 V; IC = 30 A VGE = ±15 V; RG = 33 Ω 50 50 270 40 1.4 1.0 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 30 A 1600 150 pF nC RthJC (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. B3 - 2 l space savings reduced protection circuits package designed for wave soldering Typical Applications l l l AC motor control AC servo and robot drives power supplies 0.88 K/W 023 Symbol © 2000 IXYS All rights reserved MWI 30-06 A7 MWI 30-06 A7T Diodes Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions VF IF = 30 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C 2.0 1.5 IRM trr IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V 13 90 RthJC (per diode) 36 24 Conduction A A Characteristic Values min. typ. max. 2.2 1.7 V V A ns 2.11 K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.95 V; R0 = 42 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.09 V; R0 = 12 mΩ Thermal Response Temperature Sensor NTC (MWI ... A7T version only) Symbol Conditions Characteristic Values min. typ. max. R25 B25/50 T = 25°C 4.75 5.0 3375 5.25 kΩ K Module Symbol Conditions Maximum Ratings TVJ Tstg -40...+150 -40...+125 °C °C VISOL IISOL ≤ 1 mA; 50/60 Hz 2500 V~ Md Mounting torque (M5) 2.7 - 3.3 Nm Symbol Conditions 5 Creepage distance on surface Strike distance in air RthCH with heatsink compound Dimensions in mm (1 mm = 0.0394") 6 6 mΩ mm mm 0.02 K/W 180 g 023 Weight Free Wheeling Diode (typ.) Cth1 = 0.065 J/K; Rth1 = 0.636 K/W Cth2 = 1.766 J/K; Rth2 = 0.344 K/W Characteristic Values min. typ. max. Rpin-chip dS dA IGBT (typ.) Cth1 = 0.156 J/K; Rth1 = 0.545 K/W Cth2 = 1.164 J/K; Rth2 = 0.155 K/W © 2000 IXYS All rights reserved B3 - 3 MWI 30-06 A7 MWI 30-06 A7T 90 90 A 75 IC A 75 IC VGE= 17V 15V 13V 60 VGE= 17V 15V 13V 60 11V 45 11V 45 30 30 9V 15 9V 15 TJ = 125°C TJ = 25°C 0 0 0 1 2 3 4 VCE 5 V 6 Fig. 1 Typ. output characteristics 1 2 3 4 VCE 5 V 6 Fig. 2 Typ. output characteristics 50 90 A 75 IC 0 IF 60 40 A 30 TJ = 125°C 45 TJ = 25°C 20 30 TJ = 125°C TJ = 25°C 10 15 VCE = 20V 0 4 6 8 10 12 VGE 0 0.0 14 V 16 Fig. 3 Typ. transfer characteristics 0.5 1.0 1.5 VF 2.0 V 2.5 Fig. 4 Typ. forward characteristics of free wheeling diode 150 50 20 V 40 A 15 VGE 120 ns trr IRM trr 90 30 10 60 20 5 VCE = 300V IC = 30A 0 20 40 60 80 nC 100 QG Fig. 5 Typ. turn on gate charge B3 - 4 10 0 0 120 TJ = 125°C VR = 300V IF = 15A IRM 0 30 MWI3006A7 200 400 600 800 A/µs -di/dt 0 1000 Fig. 6 Typ. turn off characteristics of free wheeling diode © 2000 IXYS All rights reserved MWI 30-06 A7 MWI 30-06 A7T 8 VCE = 300V mJ VGE = ±15V Eon tr R = 33Ω 6 G TVJ = 125°C 80 2.0 ns mJ 60 td(on) Eon t Eoff Eoff 1.5 1.0 RG = 33Ω 2 20 0.5 0 0 0.0 0 20 40 60 A t td(off) 200 TVJ = 125°C 100 tf 0 20 40 IC Eon td(on) VCE = 300V mJ VGE = ±15V = 30A I 3 C TVJ = 125°C 0 Fig. 8 Typ. turn off energy and switching times versus collector current 2.0 80 ns tr 60 Eon 2 60 A IC Fig. 7 Typ. turn on energy and switching times versus collector current 4 ns 300 VCE = 300V VGE = ±15V 40 4 400 t Eoff VCE = 300V mJ VGE = ±15V IC = 30A 1.5 T = 125°C VJ 1.0 td(off) 400 ns 300 t 200 Eoff 40 1 0.5 100 tf 0 0 10 20 30 40 50 60 RG 20 70 Ω 80 0.0 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor ICM 20 30 40 0 70 Ω 80 50 60 RG Fig.10 Typ. turn off energy and switching times versus gate resistor 80 10 A K/W 60 10 ZthJC diode 1 IGBT 0.1 40 0.01 20 0.001 RG = 33 Ω TVJ = 125°C 0 0 100 200 300 400 500 600 VCE 700 V Fig. 11 Reverse biased safe operating area RBSOA © 2000 IXYS All rights reserved single pulse 0.0001 0.00001 0.0001 0.001 MWI3006A7 0.01 0.1 1 s 10 t Fig. 12 Typ. transient thermal impedance B3 - 5