MUBW 50-06 A7 Converter - Brake - Inverter Module (CBI2) 21 D11 D13 22 D7 D15 7 1 2 3 D12 D14 D16 T1 D1 16 15 6 T7 14 23 T2 11 10 T3 18 17 D5 20 19 5 T4 D2 T5 D3 T6 D4 12 4 D6 13 24 8 NTC 9 Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600V IDAVM = 44 A IFSM = 400 A VCES = 600 V IC25 = 35 A VCE(sat) = 2.1 V VCES = 600 V IC25 = 75 A VCE(sat) = 1.9 V Application: AC motor drives with Input Rectifier Bridge D11 - D16 ● Conditions Maximum Ratings VRRM 1600 V IFAV IDAVM IFSM TC = 80°C; sine 180° TC = 80°C; rectangular; d = 1/3 TVJ = 25°C; t = 10 ms; sine 50 Hz 30 29 400 A A A Ptot TC = 25°C 120 W ● ● Features ● ● ● Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VF IF = 50 A; TVJ = 25°C TVJ = 125°C 1.5 1.6 IR VR = VRRM; TVJ = 25°C TVJ = 125°C trr VR = 100 V; IF = 20 A; di/dt = -20 A/µs RthJC (per diode) IXYS reserves the right to change limits, test conditions and dimensions. © 2001 IXYS All rights reserved 1.8 ● V V ● 2 mA mA ● 1 µs 0.2 Input from single or three phase grid Three phase synchronous or asynchronous motor electric braking operation High level of integration - only one power semiconductor module required for the whole drive Fast rectifier diodes for enhanced EMC behaviour NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ruggedness Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery Industry standard package with insulated copper base plate and soldering pins for PCB mounting Temperature sense included 1.06 K/W 105 Symbol 1-8 MUBW 50-06 A7 Output Inverter T1 - T6 Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 IC80 TC = 25°C TC = 80°C 75 50 A A RBSOA VGE = ±15 V; RG = 22 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH ICM = 100 VCEK ≤ VCES A tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C Symbol Conditions IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 1 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES Inductive load, TVJ = 125°C VCE = 300 V; IC = 50 A VGE = ±15 V; RG = 22 Ω Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 50 A RthJC (per IGBT) µs IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.82 V; R0 = 28 mΩ 250 W Free Wheeling Diode (typ. at TJ = 125°C) V0 = 0.89 V; R0 = 8 mΩ 1.9 2.2 4.5 2.4 V V 6.5 V 0.8 mA mA 200 nA 0.7 Conditions IF25 IF80 TC = 25°C TC = 80°C T7 / D7 IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.9 V; R0 = 65 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.07 V; R0 = 23 mΩ Thermal Response 50 55 300 30 2.3 1.7 ns ns ns ns mJ mJ D11 - D16 2800 120 pF nC Rectifier Diode (typ.) Cth1 = 0.131 J/K; Rth1 = 0.851 K/W Cth2 = 0.839 J/K; Rth2 = 0.209 K/W 0.5 K/W T1 - T6 / D1 - D6 IGBT (typ.) Cth1 = 0.221 J/K; Rth1 = 0.382 K/W Cth2 = 1.377 J/K; Rth2 = 0.119 K/W Output Inverter D1 - D6 Symbol Rectifier Diode (typ. at TJ = 125°C) V0 = 1.0 V; R0 = 12 mΩ 10 VCE = 0 V; VGE = ± 20 V td(on) tr td(off) tf Eon Eoff D11 - D16 T1 - T6 / D1 - D6 Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) Conduction Maximum Ratings 72 45 A A Free Wheeling Diode (typ.) Cth1 = 0.116 J/K; Rth1 = 0.973 K/W Cth2 = 0.88 J/K; Rth2 = 0.217 K/W T7 / D7 Symbol Conditions VF IF = 50 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C 1.3 V V IRM trr IF = 25 A; diF/dt = -500 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V 25 90 A ns RthJC (per diode) © 2001 IXYS All rights reserved Characteristic Values min. typ. max. 1.8 IGBT (typ.) Cth1 = 0.108 J/K; Rth1 = 0.79 K/W Cth2 = 0.921 J/K; Rth2 = 0.209 K/W Free Wheeling Diode (typ.) Cth1 = 0.043 J/K; Rth1 = 2.738 K/W Cth2 = 0.54 J/K; Rth2 = 0.462 K/W 1.19 K/W 2-8 MUBW 50-06 A7 Brake Chopper T7 Symbol Conditions VCES TVJ = 25°C to 150°C 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 IC80 TC = 25°C TC = 80°C 35 25 A A RBSOA VGE = ±15 V; RG = 47 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH ICM = 40 VCEK ≤ VCES A tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 47 Ω; TVJ = 125°C non-repetitive 10 µs Ptot TC = 25°C 125 W Symbol Conditions VCE(sat) IC = 25 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 0.5 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES td(on) tr td(off) tf Eon Eoff Cies QGon Maximum Ratings Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.1 2.4 4.5 2.6 V V 6.5 V 0.5 mA mA 200 nA 0.3 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 300 V; IC = 25 A VGE = ±15 V; RG = 47 Ω 50 60 300 30 1.15 0.85 ns ns ns ns mJ mJ VCE = 25 V; VGE = 0 V; f = 1 MH z VCE = 300 V; VGE = 15 V; IC = 25 A 1100 65 pF nC RthJC 1.0 K/W Brake Chopper D7 Symbol Conditions VRRM TVJ = 25°C to 150°C IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions VF IF = 25 A; TVJ = 25°C TVJ = 125°C 1.8 VR = VRRM; TVJ = 25°C TVJ = 125°C IR IRM trr IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 300 V RthJC © 2001 IXYS All rights reserved Maximum Ratings 600 V 22 15 A A Characteristic Values min. typ. max. 2.5 V V 0.06 0.07 mA mA 11 80 A ns 3.2 K/W 3-8 MUBW 50-06 A7 Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 B25/50 T = 25°C 4.75 5.0 3375 5.25 kΩ K Module Symbol Conditions TVJ TJM Tstg Operating VISOL Maximum Ratings -40...+125 150 -40...+125 °C °C °C IISOL ≤ 1 mA; 50/60 Hz 2500 V~ Md Mounting torque (M5) 2.7 - 3.3 Nm Symbol Conditions Characteristic Values min. typ. max. Rpin-chip 5 dS dA Creepage distance on surface Strike distance in air RthCH with heatsink compound Weight 6 6 mΩ mm mm 0.02 K/W 180 g Dimensions in mm (1 mm = 0.0394") © 2001 IXYS All rights reserved 4-8 MUBW 50-06 A7 Input Rectifier Bridge D11 - D16 120 200 A A 100 160 IFSM IF 80 103 50Hz, 80% VRRM A2s TVJ= 45°C I2t TVJ= 45°C TVJ= 125°C TVJ= 125°C 120 TVJ= 25°C 60 80 40 TVJ= 125°C 40 20 0 0.0 0.5 1.0 1.5 VF 2.0 V 102 0 0.001 2.5 0.01 0.1 1 s 1 t Fig. 1 Forward current versus voltage drop per diode 2 3 4 5 6 7 ms 8 910 t Fig. 3 I2t versus time per diode Fig. 2 Surge overload current 100 800 A W 80 Id(AV) 600 Ptot RthA: 0.05 K/W 0.15 K/W 0.3 K/W 0.5 K/W 1 K/W 2 K/W 5 K/W 400 60 40 200 20 0 0 0 40 80 120 A 0 20 40 60 80 100 120 140 °C Id(AV)M Fig. 4 1 Tamb Power dissipation versus direct output current and ambient temperature, sin 8 0 ° 0 20 40 60 80 100 120 140 °C TC Fig. 5 Max. forward current versus case temperature 1.2 K/W 1.0 ZthJC 0.8 0.6 0.4 0.2 DWFN21-16 0.0 0.001 0.01 0.1 Fig. 6 Transient thermal impedance junction to case © 2001 IXYS All rights reserved 1 s 10 t 5-8 MUBW 50-06 A7 Output Inverter T1 - T6 / D1 - D6 150 IC 150 VGE= 17V 15V 13V A 120 A 120 IC 90 VGE= 17V 15V 13V 90 11V 60 11V 60 9V 30 9V 30 TVJ = 125°C TVJ = 25°C 0 0 0 1 2 3 4 VCE V 5 0 6 Fig. 7 Typ. output characteristics 1 2 3 4 VCE 5 V 6 Fig. 8 Typ. output characteristics 90 150 75 A A 120 IF IC 60 90 45 TVJ = 125°C 60 TVJ = 25°C 30 TVJ = 125°C TVJ = 25°C 30 15 VCE = 20V 0 4 6 8 10 12 VGE 0 0.0 14 V 16 Fig. 9 Typ. transfer characteristics 0.5 1.0 1.5 VF V 2.0 Fig. 10 Typ. forward characteristics of free wheeling diode # 50 20 V 40 A 15 IRM VGE ns trr trr ' 30 10 $ 20 5 VCE = 300V IC = 50A TVJ = 125°C VR = 300V IF = 30A 10 IRM MUBW5006A7 0 0 0 40 80 120 QG Fig. 11 Typ. turn on gate charge © 2001 IXYS All rights reserved nC 160 ! 0 200 400 600 800 A/µs -di/dt 1000 Fig. 12 Typ. turn off characteristics of free wheeling diode 6-8 MUBW 50-06 A7 Output Inverter T1 - T6 / D1 - D6 10.0 Eon 4 100 Jd(on) mJ ns mJ 7.5 75 3 t Eoff 400 300 t Jr Jd(off) 5.0 2 50 200 VCE = 300V VGE = ±15V VCE = 300V VGE = ±15V RG = 22Ω TVJ = 125°C 2.5 RG = 22Ω TVJ = 125°C 1 25 Eon 0.0 0 40 A 80 IC Jf 0 0 120 0 Fig. 13 Typ. turn on energy and switching times versus collector current 4 Jd(on) Eon Eon 3 Jr 2 VCE = 300V VGE = ±15V IC = 50A TVJ = 125°C 0 0 10 20 30 40 RG ns t Eoff Eoff 2 400 t Jd(off) VCE = 300V VGE = ±15V IC = 50A TVJ = 125°C 1 20 200 Jf 0 0 50 Ω 60 0 Fig. 15 Typ. turn on energy and switching times versus gate resistor 10 20 30 0 50 Ω 60 40 RG Fig.16 Typ. turn off energy and switching times versus gate resistor 120 10 A K/W 90 0 120 A 600 40 1 ICM 80 IC 3 mJ 80 60 40 100 Fig. 14 Typ. turn off energy and switching times versus collector current ns mJ ns Eoff ZthJC diode 1 IGBT 0.1 60 0.01 30 single pulse 0.001 RG = 22 Ω TVJ = 125°C 0 0 100 200 300 400 500 600 VCE 700 V Fig. 17 Reverse biased safe operating area RBSOA © 2001 IXYS All rights reserved 0.0001 0.00001 0.0001 0.001 MUBW5006A7 0.01 0.1 1 s 10 t Fig. 18 Typ. transient thermal impedance 7-8 MUBW 50-06 A7 Brake Chopper T7 / D7 60 20 A A 50 IC IF 15 40 TVJ = 25°C TVJ = 125°C TVJ = 125°C 30 TVJ = 25°C 10 20 5 10 VGE = 15V 0 0 0 1 2 3 4 5 0 V 6 1 2 VF VCE Fig. 19 Typ. output characteristics 2.0 400 1.0 ns mJ Eoff 1.5 300 t Eoff 500 mJ ns 0.8 400 t Eoff 0.6 1.0 200 VCE = 300V VGE = ±15V Jf 0.0 0 10 20 30 40 A 100 300 Jd(off) 0.4 RG = 47Ω TVJ = 125°C Eoff 3 Fig. 20 Typ. forward characteristics of free wheeling diode Jd(off) 0.5 V VCE = 300V VGE = ±15V IC = 25A TVJ = 125°C 0.2 0 50 Jf 0.0 0 20 40 60 200 100 0 100 Ω 120 80 IC RG Fig. 21 Typ. turn off energy and switching times versus collector current Fig. 22 Typ. turn off energy and switching times versus gate resistor 10 diode K/W 1 Temperature Sensor NTC IGBT ZthJC 10000 0.1 Ω R 0.01 1000 0.001 single pulse 0.0001 0.00001 0.0001 0.001 MUBW5006A7 100 0.01 0.1 1 s 10 t Fig. 23 Typ. transient thermal impedance © 2001 IXYS All rights reserved 0 25 50 75 100 125 °C 150 T Fig. 24 Typ. thermistorresistance versus temperature 8-8