MUBW30-12E6K Converter - Brake - Inverter Module (CBI 1) SPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM =1600 V VCES =1200 V VCES =1200 V IDAVM25= 130 A IC25 IFSM = 19 A IC25 = 29 A = 300 A VCE(sat)= 2.9 V VCE(sat)= 2.9 V Part name (Marking on product) -o u t MUBW30-12E6K E72873 Features: h a s e Pin configuration see outlines. p •High level of integration - only one power semiconductor module required for the whole drive •Inverter with SPT IGBTs - low saturation voltage - positive temperature coefficient - fast switching - short tail current •Epitaxial free wheeling diodes with hiperfast and soft reverse recovery •Industry standard package with insu lated copper base plate and soldering pins for PCB mounting •Temperature sense included Application: Package: AC motor drives with •UL registered •Industry standard E1-pack •Input from single or three phase grid •Three phase synchronous or asynchronous motor •Electric braking operation IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 20071113a -9 MUBW30-12E6K Ouput Inverter T1 - T6 Ratings Symbol Definitions VCES collector emitter voltage Conditions VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient IC25 IC80 collector current Ptot total power dissipation VCE(sat) min. max. Unit 1200 V ±20 ±30 V V TC = 25°C TC = 80°C 30 21 A A TC = 25°C 130 W collector emitter saturation voltage IC = 30 A; VGE = 15 V TVJ= 25°C TVJ=125°C 3.6 V V VGE(th) gate emitter threshold voltage IC = 0.6 mA; VGE = VCE TVJ= 25°C 6.5 V ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ= 25°C TVJ=125°C 1 mA mA IGES gate emitter leakage current VCE = 0 V; VGE = ±20 V 200 nA Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 20 A td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse ICM reverse bias safe operating area tSC (SCSOA) short circuit safe operating area RthJC thermal resistance junction to case RthCH thermal resistance case to heatsink TVJ = 25°C to 150°C 3.1 3.8 4.5 0.6 pF 100 nC 210 110 320 180 4.1 1.5 ns ns ns ns mJ mJ RBSOA; VGE = ±15 V; RG = 68 W L = 100 µH; clamped induct. load TVJ=125°C VCEmax = VCES - LS·di/dt 45 A VCE = 900 V; VGE = ±15 V; RG = 68 W; non-repetitive 10 µs u t 1180 TVJ=125°C TVJ = 125°C s e -o inductive load VCE = 600 V; IC = 20 A VGE = ±15 V; RG = 68 W (per IGBT) 0.95 (per IGBT) 0.35 a h Output Inverter D1 - D6 typ. K/W K/W Ratings Definitions max. Unit VRRM max. repetitve reverse voltage IF25 IF80 forward current TVJ=150°C 1200 V TC = 25°C TC = 80°C 49 32 A A VF forward voltage IF = 30 A; VGE = 0 V TVJ= 25°C TVJ=125°C 2.9 2.0 V V IRM trr Erec(off) max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -500 A/µs IF = 30 A; VGE = 0 V TVJ=125°C 27 150 tbd A ns µJ RthJC thermal resistance junction to case (per diode) RthCH thermal resistance case to heatsink (per diode) p Symbol Conditions min. typ. 0.9 0.3 K/W K/W TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 20071113a -9 MUBW30-12E6K Brake Chopper T7 Ratings Symbol Definitions Conditions VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient IC25 IC80 collector current Ptot total power dissipation VCE(sat) min. max. Unit 1200 V ±20 ±30 V V TC = 25°C TC = 80°C 19 13 A A TC = 25°C 90 W collector emitter saturation voltage IC = 15 A; VGE = 15 V TVJ= 25°C TVJ=125°C 3.4 V V VGE(th) gate emitter threshold voltage IC = 0.4 mA; VGE = VCE TVJ= 25°C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ= 25°C TVJ=125°C IGES gate emitter leakage current VCE = 0 V; VGE = ±20 V Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 10 A td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse ICM reverse bias safe operating area tSC (SCSOA) short circuit safe operating area RthJC thermal resistance junction to case RthCH thermal resistance case to heatsink TVJ = 25°C to 150°C 2.9 3.5 4.5 6.5 V 0.5 mA mA 100 nA 0.8 pF 45 nC 45 40 290 60 1.2 1.1 ns ns ns ns mJ mJ RBSOA; VGE = ±15 V; RG = 82 W L = 100 µH; clamped induct. load TVJ=125°C VCEmax = VCES - LS·di/dt 20 A VCE = 720 V; VGE = ±15 V; RG = 82 W; non-repetitive 10 µs u t 600 TVJ=125°C TVJ = 125°C s e -o inductive load VCE = 600 V; IC = 10 A VGE = ±15 V; RG = 82 W (per IGBT) 1.35 K/W (per IGBT) 0.45 Conditions Ratings typ. max. Unit a h Brake Chopper D7 typ. Symbol Definitions VRRM max. repetitive reverse voltage TVJ=150°C 1200 V IF25 IF80 forward current TC = 25°C TC = 80°C 15 10 A A VF forward voltage IF = 15 A; VGE = 0 V TVJ= 25°C TVJ=125°C 3.5 2.0 V V IR reverse current VR = VRRM TVJ= 25°C TVJ=125°C 0.06 0.2 mA mA IRM trr max. reverse recovery current reverse recovery time VR = 600 V; IF = 10 A diF /dt = -400 A/µs TVJ=125°C 13 110 A ns RthJC thermal resistance junction to case (per diode) RthCH thermal resistance case to heatsink (per diode) p min. K/W 2.5 0.85 K/W K/W TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 20071113a -9 MUBW30-12E6K Input Rectifier Bridge D8 - D13 Symbol Definitions Conditions VRRM max. repetitive reverse voltage IFAV IDAVM IFSM average forward current max. average DC output current max. surge forward current sine 180° rectangular; d = 1/3; bridge t = 10 ms; sine 50 Hz Ptot total power dissipation Symbol Conditions Maximum Ratings 1600 V TC = 80°C TC = 80°C TC = 25°C 31 89 320 A A A TC = 25°C 80 W Characteristic Values min. typ. max. 1.35 V V 0.02 mA mA 1.4 K/W VF forward voltage IF = 30 A TVJ = 25°C TVJ = 125°C 1.0 1.1 IR reverse current VR = VRRM TVJ = 25°C TVJ = 125°C 0.4 RthJC thermal resistance junction to case (per diode) TVJ = 25°C RthCH thermal resistance case to heatsink (per diode) t 0.45 Definitions Conditions R25 B25/85 resistance Symbol Definitions Conditions TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature -40 VISOL isolation voltage Md mounting torque (M4) 2.0 dS dA creep distance on surface strike distance through air u Symbol s Temperature Sensor NTC 4.45 -o TC = 25°C min. min. e Module Ratings typ. max. 4.7 3510 Unit kW K Unit 125 150 125 °C °C °C 2500 V~ 2.2 Nm IISOL < 1 mA; 50/60 Hz a 5.0 Ratings typ. max. -40 12.7 12.7 h Weight K/W mm mm 40 g I V0 R0 p Equivalent Circuits for Simulation min. Ratings typ. max. Symbol Definitions Conditions V0 R0 rectifier diode Unit D8 - D13 TVJ=125°C 0.90 9 V mW V0 R0 IGBT T1 - T6 TVJ=125°C 1.10 90 V mW V0 R0 free wheeling diode D1 - D6 TVJ=125°C 1.5 14 V mW V0 R0 IGBT T7 TVJ=125°C 1.5 120 V mW V0 R0 free wheeling diode D7 TVJ=125°C 1.46 63 V mW TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 20071113a -9 MUBW30-12E6K Outline Drawing p h a s e -o u t Dimensions in mm (1 mm = 0.0394“) Product Marking Ordering Part Name Standard MUBW 30-12E6K Marking on Product Delivering Mode Base Qty Ordering Code MUBW30-12E6K IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Box 10 499 323 20071113a -9 MUBW30-12E6K Input Rectifier Bridge D8 - D13 80 200 103 A As TVJ = 125°C A TVJ = 25°C 60 2 TVJ= 45°C 150 2 It IFSM IF 40 TVJ= 45°C 100 TVJ= 150°C TVJ= 150°C 20 50 50Hz, 80% VRRM 0.6 1.8 V 1.2 0 0.001 2.4 0.01 0.1 VF s Fig. 2 Surge overload current 160 u Ptot a 40 60 80 A 0 20 40 60 20 80 100 120 140 C ID(AV)M h Tamb Fig. 4 Power dissipation versus direct output current and ambient temperature, sin 180°Fig. 0 0 20 40 60 80 100 120 140 C TC Fig. 5 Max. forward current vs. case temperature p 1.6 K/W 100 A 40 s 40 4 5 6 7ms 8 910 t 60 e 80 3 ID(AV)80 -o 120 20 2 Fig. 3 I2t versus time per diode RthA: 0.2 K/W 0.5 K/W 0.8 K/W 1.5 K/W 3 K/W 5 K/W 8 K/W W 0 1 t Fig. 1 Forward current versus voltage drop per diode 0 102 1 t 0 0.0 1.2 ZthJC 0.8 0.4 0.0 0.001 MUBW30-12E6K 0.01 0.1 IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved s 1 Fig. 6 Transient thermal impedance junction to case 10 t 20071113a -9 MUBW30-12E6K Output Inverter T1 - T6 / D1 - D6 80 60 VGE = 17 V A IC IC 15 V 60 VGE = 17 V A 50 TVJ = 125°C 15 V 40 TVJ = 25°C 13 V 13 V 40 30 11 V 11 V 20 20 9V 0 0 1 2 3 4 10 0 V 6 5 9V 0 1 2 3 4 VCE 50 u A TVJ = 25°C IF 60 30 TVJ = 125°C 5 10 15 V 0 20 a 0 TVJ = 25°C 10 s 20 TVJ = 125°C 20 e 40 0 40 -o IC Fig. 8 Typ. output characteristics VCE = 20 V 80 0 1 2 3 Fig. 10 Typ. forward characteristics of free wheeling diode p h Fig. 9 Typ. transfer characteristics 15 V VCE = 600 V IC = 20 A 12 4 V VF VGE VGE 6 V t Fig. 7 Typ. output characteristics A 5 VCE 50 250 A ns 40 200 30 150 IRM 9 trr trr 100 20 6 TVJ = 125°C VR = 600 V IF = 15 A 10 3 IRM 0 0 20 40 60 80 nC 100 QG Fig. 11 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 0 50 MUBW 30-12E6K 0 200 400 600 800 A/Ps 0 1000 -di/dt Fig. 12 Typ. turn off char. of free wheeling diode 20071113a -9 MUBW30-12E6K Output Inverter T1 - T6 / D1 - D6 20 td(on) mJ 16 100 4 0 2.5 2.0 RG = 68 : TVJ = 125°C 1.0 0 10 20 0.0 0 30 A 40 250 150 100 tf 0 10 20 t 2.5 u 10 mJ Eoff 2.0 -o 8 6 1.5 s e VCE = 600 V VGE = ±15 V IC = 20 A TVJ = 125°C 0 50 100 150 200 : 250 1250 VCE = 600 V VGE = ±15 V IC = 20 A TVJ = 125°C 0.5 250 0.0 tf 0 50 100 RG p h Fig.16 Typ. turn off energy and switching times versus gate resistor ZthJC 1 0.01 0.001 0 200 400 600 800 1000 1200 V VCE Fig. 17 Reverse biased safe operating area IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved IGBT 0.1 RG = 68 : TVJ = 125°C 10 0 diode K/W 40 20 0 200 : 250 150 10 ICM 30 750 500 Fig. 15 Typ. turn on energy versus gate resistor A t td(off) Eoff RG 50 ns 1000 1.0 a 0 0 40 Fig. 14 Typ. turn off energy and switching times versus collector current mJ 2 50 IC Fig. 13 Typ. turn on energy and switching times versus collector current 4 A 30 IC Eon t 200 Eoff 0.5 Eon ns 350 300 VCE = 600 V VGE = ±15 V 1.5 50 400 td(off) Eoff 3.0 150 RG = 68 : TVJ = 125°C 8 mJ 3.5 t VCE = 600 V VGE = ±15 V 12 4.0 ns 200 tr Eon 250 single pulse 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 s 10 t Fig. 18 Typ. transient thermal impedance 20071113a -9 MUBW30-12E6K Brake Chopper T7 / D7 A 25 IC 30 A 25 VGE = 15V 20 TVJ = 25°C 15 15 TVJ = 125°C 10 10 5 0 TVJ = 125°C IF 20 TVJ = 25°C 5 0 1 2 3 4 5 V 0 6 0 1 2 3 Fig. 20 Typ. forward characteristics of free wheeling diode mJ ns 3 td(off) VCE = 600V VGE = ±15V 200 RG = 82: TVJ = 125°C 1 Eoff 600 Eoff mJ 0.8 0.4 e 2 ns td(off) t 200 s Eoff 5 10 15 20 A 0.0 a 0 tf 0 0 20 40 60 80 100 IC 120 : 0 RG Fig. 22 Typ. turn off energy and switching times versus gate resistor p h Fig. 21 Typ. turn off energy and switching times versus collector current 10 K/W ZthJC 400 VCE = 600V VGE = ±15V IC = 20A TVJ = 125°C 100 tf 0 300 t 1.2 u 400 -o 4 t Fig. 19 Typ. output characteristics Eoff 4 V VF VCE diode 1 10000 IGBT : R 1000 0.1 single pulse 0.01 0.001 0.01 0.1 1 s 10 t Fig. 23 Typ. transient thermal impedance IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 100 0 25 50 75 100 125 C 150 T Fig. 24 Typ. thermistor resistance versus temperature 20071113a -9