JIANGSU 2N7002M

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate MOSFET
2N7002M
MOSFET( N-Channel )
D
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
DESCRIPTION
TOP
High cell density, DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable, and fast switching
G
performance. They can be used in most applications requiring up to 400mA DC
D
and can deliver pulsed currents up to 2A. These products are particularly suited
1. GATE
for low voltage, low current applications such as small servo motor control, power
2. SOURCE
MOSFET gate drivers, and other switching applications.
S
BACK
3. DRAIN
S
G
FEATURES
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
APPLICATION
N-Channel Enhancement Mode Field Effect Transistor
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: 72
D
72
G
S
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
Value
Units
60
V
VDS
Drain-Source voltage
ID
Drain Current
115
mA
PD
Power Dissipation
150
mW
RθJA
Thermal Resistance. Junction to Ambient Air
625
℃/W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS(Ta=25℃
Parameter
Symbol
unless
Test
otherwise
conditions
specified)
MIN
VGS=0V,ID=10µA
60
VGS=0V,ID=3mA
60
1
Drain-Source Breakdown Voltage
V(BR)DSS
Gate-Threshold Voltage*
Vth(GS)
VDS=VGS, ID=250µA
Gate-body Leakage
lGSS
VDS=0V, VGS=±25V
Zero Gate Voltage Drain Current
IDSS
On-state Drain Current*
ID(ON)
TYP
MAX
V
2.5
±100
VDS=60V, VGS=0V
1
500
VDS=60V,VGS=0V,Tj=125℃
VGS=10V, VDS=7V
500
1.2
7.5
VGS=5V, ID=50mA
1.7
7.5
RDS(0n)
Drain-Source On- Voltage *
VDS(0n)
Forward Tran conductance*
gts
VDS=10V, ID=200mA
Diode Forward Voltage
VSD
IS=115mA, VGS=0V
Input Capacitance
Ciss
Output Capacitance
COSS
Reverse Transfer Capacitance
CrSS
nA
µA
mA
VGS=10V, ID=500mA
Drain-Source On-Resistance*
UNIT
VGS=10V, ID=500mA
3.75
VGS=5V, ID=50mA
0.375
80
Ω
V
ms
1.2
V
50
VDS=25V, VGS=0V,f=1MHz
25
pF
5
* Pulse test , pulse width≤300µs, duty cycle≤2% .
SWITCHING TIME
Turn-on Time
td(0n)
Turn-off Time
td(off)
VDD=25V,RG=25Ω
ID=500mA,VGEN=10V
RL=50Ω
20
40
ns
Typical Characteristics
2N7002M
Sym bol
A
A1
b
b1
b2
D
E
D2
E2
e
L
L1
L2
k
z
D im e n s io n s In M illim e t e r s
M in .
M ax.
0 .4 5 0
0 .5 5 0
0 .0 1 0
0 .0 9 0
0 .1 7 0
0 .2 7 0
0 .2 7 0
0 .3 7 0
0 .2 5 0 R E F .
1 .1 5 0
1 .2 5 0
1 .1 5 0
1 .2 5 0
0 .4 7 0 R E F .
0 .8 1 0 R E F .
0 .8 0 0 T Y P .
0 .2 8 0 R E F .
0 .2 3 0 R E F .
0 .1 5 0 R E F .
0 .3 0 0 R E F .
0 .0 9 0 R E F .
D im e n s io n s In In c h e s
M in .
M ax.
0 .0 1 8
0 .0 2 2
0 .0 0 0
0 .0 0 4
0 .0 0 7
0 .0 1 1
0 .0 1 1
0 .0 1 5
0 .0 1 0 R E F .
0 .0 4 5
0 .0 4 9
0 .0 4 5
0 .0 4 9
0 .0 0 2 R E F .
0 .0 3 2 R E F .
0 .0 3 2 T Y P .
0 .0 1 1 R E F .
0 .0 0 9 R E F .
0 .0 0 6 R E F .
0 .0 1 2 R E F .
0 .0 0 4 R E F .