Shantou Huashan Electronic Devices Co.,Ltd. HBS170 N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-92 These products have been designed to minimize on-state resistance While provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. 1- D 2-G 3-S █ Features High density cell design for low Rds(on). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. █ Maximum Ratings（Ta=25℃ unless otherwise specified） T stg ——Storage Temperature ------------------------------------------------------ -55~150℃ T j ——Operating Junction Temperature ---------------------------------------------- -55~150℃ V DSS —— Drain-Source Voltage ---------------------------------------------------------- 60V VDGR —— Drain-Gate Voltage (RGS≤1MΩ) --------------------------------------------------------- 60V VGSS —— Gate-Source Voltage ------------------------------------------------------------------------ ±20V ID —— Drain Current (Continuous) ---------------------------------------------------------------- 500mA PD —— Maximum Power Dissipation 0.83W ------------------------------------------------------------ █ Electrical Characteristics（Ta=25℃ unless otherwise specified） Symbol Items BVDSS Drain-Source Breakdown Voltage IDSS IGSSF Zero Gate Voltage Drain Current Gate – Body Leakage, Forward Gate Threshold Voltage VGS(TH) RDS(ON) gFS Ciss Coss Min. Typ. 60 0.8 Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Max. 320 24 Unit Conditions V VGS=0V, ID=100uA 0.5 10 uA nA VDS =25V, VGS=0V VGS=15V , VDS =0V 3.0 5 V Ω VDS = VGS , ID=1mA VGS=10V, ID=200mA mS VDS=10V, ID=200mA 40 pF 17 30 pF 7 Crss ton Reverse Transfer Capacitance 10 pF Turn - On Time 10 nS toff Turn - Off Time 10 nS VDS = 10 V, VGS = 0 V, f = 1.0 MHz VDD = 25 V, ID = 200 m A, VGS = 10 V, RGEN = 25 Ω Shantou Huashan Electronic Devices Co.,Ltd. █ Performance Curves HBS170 Shantou Huashan Electronic Devices Co.,Ltd. █ Performance Curves HBS170 Shantou Huashan Electronic Devices Co.,Ltd. █ Performance Curves HBS170