CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CHM9424JPT CURRENT 7.7 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) 4.06 (0.160) 3.70 (0.146) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. 8 1 CONSTRUCTION 5.00 (0.197) 4.69 (0.185) * P-Channel Enhancement .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 4 5 1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002) CIRCUIT 8 1 D D D D S S S G 5 6.20 (0.244) 5.80 (0.228) Dimensions in millimeters 4 Absolute Maximum Ratings Symbol .25 (0.010) .17 (0.007) SO-8 TA = 25°C unless otherwise noted Parameter CHM9424JPT Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±8 V Maximum Drain Current - Continuous -7.7 ID A - Pulsed PD Maximum Power Dissipation TJ TSTG (Note 3) -30 2500 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 50 °C/W 2008-04 ELECTRICAL CHARACTERISTIC ( CHM9424JPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min -20 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS -1 µA VGS = 8V, VDS = 0 V +100 nA VGS = -8V, VDS = 0 V -100 nA -1 V (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance VDS = VGS, ID = -250 µA -0.6 VGS=-4.5V, ID=-7.7A 20 25 VGS=-2.5V, ID=-6.6A 29 35 VDS = -10V, ID = -7.7 23 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 2130 VDS = -10V, VGS = 0V, f = 1.0 MHz 760 pF 127 SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge VDS=-6V, ID=-7.7A VGS=-4.5V 45 54 6 nC 14 t on Turn-On Time V DD= -6V 60 80 tr Rise Time I D = -1.0A , VGS = -4.5 V 90 130 t off Turn-Off Time RGEN= 6 Ω 310 400 tf Fall Time 190 250 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = -2.3A , VGS = 0 V (Note 2) (Note 1) -2.3 A -1.2 V