JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401 P-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE z High dense cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability 1. GATE 2. SOURCE 3. DRAIN D MARKING: R1 G S Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID -4.2 A Power Dissipation PD 350 mW RθJA 357 ℃/W Thermal Resistance from Junction to Ambient (t<5s) Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ A,Dec,2010 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -30 V Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V -1 µA Gate-source leakage current IGSS VGS =±12V, VDS = 0V ±100 nA VGS =-10V, ID =-4.2A 65 mΩ VGS =-4.5V, ID =-4A 75 mΩ VGS =-2.5V,ID=-1A 90 mΩ On characteristics Drain-source on-resistance RDS(on) (note 1) Forward tranconductance (note 1) Gate threshold voltage Dynamic characteristics gFS VGS(th) VDS =VGS, ID =-250µA 7 S -0.7 -1.3 V (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Switching characteristics VDS =-5V, ID =-5A VDS =-15V,VGS =0V,f =1MHz 954 pF 115 pF 77 pF (note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall Time td(on) tr td(off) 6.3 ns VGS=-10V,VDS=-15V, 3.2 ns RL=3.6Ω,RGEN=6Ω 38.2 ns 12 ns -1 V tf Drain-source diode characteristics and maximum ratings Diode forward voltage (note 1) VSD IS=-1A,VGS=0V Note : 1. Pulse Test : Pulse width≤300µs, duty cycle≤2%. 2. These parameters have no way to verify. A,Dec,2010 Typical Characteristics CJ3401 Transfer Characteristics Output Characteristics -25 -5 Ta=25℃ VGS=-10V VGS=-4.5V Ta=25℃ VGS=-3.0V Pulsed Pulsed VGS=-2.0V ID DRAIN CURRENT -10 VGS=-2.5V -3 DRAIN CURRENT ID -15 (A) -4 (A) -20 -2 -5 -1 -0 -0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE RDS(ON) —— VDS -0 -0.0 -5 (V) -0.5 -1.0 -1.5 GATE TO SOURCE VOLTAGE ID RDS(ON) —— -2.0 VGS -2.5 (V) VGS 100 120 Ta=25℃ Ta=25℃ Pulsed Pulsed 80 RDS(ON) 80 VGS=-4.5V ON-RESISTANCE ON-RESISTANCE RDS(ON) VGS=-2.5V (mΩ) (mΩ) 100 60 VGS=-10V 40 20 60 ID=-2A 40 20 -0 -2 -4 -6 DRAIN CURRENT IS -10 —— ID -8 -10 (A) -0 -2 -4 -6 GATE TO SOURCE VOLTAGE -8 VGS -10 (V) VSD Ta=25℃ Pulsed -0.1 SOURCE CURRENT IS (A) -1 -0.01 -1E-3 -1E-4 -1E-5 -0.0 -0.3 -0.6 SOURCE TO DRAIN VOLTAGE -0.9 VSD -1.2 (V) A,Dec,2010