DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4082 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4082 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. (Isolated TO-220) FEATURES • Low on-state resistance RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 1.8 A) • Low gate charge QG = 13 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 3.5 A) • Gate voltage rating: ±30 V • Avalanche capability ratings ORDERING INFORMATION PART NUMBER 2SK4082-S17-AY LEAD PLATING PACKING PACKAGE Pure Sn (Tin) Tube 50 p/tube Isolated TO-220 (MP-45F) typ. 2.2 g Note Note Pb-free (This product does not contain Pb in external electrode.) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±3.5 A ID(pulse) ±14 A Total Power Dissipation (TC = 25°C) PT1 35 W Total Power Dissipation (TA = 25°C) PT2 2.0 W Drain Current (pulse) Note1 Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Single Avalanche Current Note2 IAS 2 A Single Avalanche Energy Note2 EAS 240 mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18786EJ1V0DS00 (1st edition) Date Published June 2007 NS Printed in Japan 2007 2SK4082 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V 10 μA Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±100 nA VGS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 V | yfs | VDS = 10 V, ID = 1.8 A 0.8 RDS(on) VGS = 10 V, ID = 1.8 A 1.7 Input Capacitance Ciss VDS = 10 V, 550 pF Output Capacitance Coss VGS = 0 V, 250 pF Reverse Transfer Capacitance Crss f = 1 MHz 49 pF Turn-on Delay Time td(on) VDD = 150 V, ID = 1.8 A, 13 ns Rise Time tr VGS = 10 V, 10 ns Turn-off Delay Time td(off) RG = 10 Ω 26 ns Fall Time tf 21 ns Total Gate Charge QG VDD = 450 V, 13 nC Gate to Source Charge QGS VGS = 10 V, 4.3 nC QGD ID = 3.5 A 5.2 nC VF(S-D) IF = 3.5 A, VGS = 0 V 0.87 Reverse Recovery Time trr IF = 3.5 A, VGS = 0 V, 220 ns Reverse Recovery Charge Qrr di/dt = 100 A/μs 840 nC Gate to Source Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note Gate to Drain Charge Body Diode Forward Voltage Note 3.0 S Ω 2.2 1.5 V Note Pulsed TEST CIRCUIT 2 SWITCHING TIME TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L VGS RL PG. 50 Ω VGS VDD VGS = 20 → 0 V RG PG. Wave Form 0 VGS 10% 90% VDD VDS IAS 90% BVDSS VDS ID VDS τ VDD Starting Tch τ = 1 μs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. PG. 2 IG = 2 mA RL 50 Ω VDD 90% VDS VGS 0 Data Sheet D18786EJ1V0DS 0 10% 10% tr td(off) Wave Form td(on) ton tf toff 2SK4082 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 40 35 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 30 25 20 15 10 5 0 0 0 25 50 75 100 125 0 150 75 100 125 150 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. CASE TEMPERATURE 4 PW 3.5 =1 i ID(DC) 00 1i m i d it e Lim V ) n) (o i0 S 1 RD S = G (V s 1i 0 i m 1 μs ID - Drain Current - A ID(pulse) 10 s w Po D er 0.1 p si is io at n d it e m Li 0.01 3 2.5 2 1.5 1 0.5 TC = 25°C Single Pulse 0 0.1 1 10 100 1000 0 25 VDS - Drain to Source Voltage - V 50 75 100 125 150 TC - Case Temperature - °C TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A 50 Tch - Channel Temperature - °C 100 0.001 25 Rth(ch-A) = 62.5°C/Wi 10 Rth(ch-C) = 3.57°C/Wi 1 0.1 Single Pulse 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D18786EJ1V0DS 3 2SK4082 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 6 10 VDS = 10 V Pulsed VGS = 20 V ID - Drain Current - A ID - Drain Current - A 5 4 10 V 3 2 1 Tch = −55°C −40°C −25°C 25°C 75°C 125°C 150°C 0.1 1 Pulsed 0.01 0 2 4 6 8 0 10 4 16 20 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 6 5 4 3 2 1 VDS = 10 V ID = 1 mA 0 -25 25 75 125 175 10 VDS = 10 V Pulsed 1 0.1 0.01 0.01 5 4 3 ID = 3.5 A 1.8 A Pulsed 0 0 5 10 15 1 10 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - Ω 6 1 0.1 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 2 Tch = −55°C −40°C −25°C 25°C 75°C 125°C 150°C Tch - Channel Temperature - °C RDS(on) - Drain to Source On-state Resistance - Ω 12 VGS - Gate to Source Voltage - V -75 VGS - Gate to Source Voltage - V 4 8 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(off) - Gate to Source Cut-off Voltage - V 0 6 5 4 3 VGS = 10 V 2 20 V 1 Pulsed 0 0.01 0.1 1 10 ID - Drain Current - A Data Sheet D18786EJ1V0DS 100 2SK4082 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 6 10000 VGS = 10 V Pulsed 5 4 Ciss, Coss, Crss - Capacitance - pF ID = 3.5 A 3 1.8 A 2 1 1000 Ciss 100 Coss 10 VGS = 0 V f = 1 MHz 0 1 -75 -25 25 75 125 175 0.1 10 100 1000 DYNAMIC INPUT/OUTPUT CHARACTERISTICS SWITCHING CHARACTERISTICS 1000 600 VDD = 150 V VGS = 10 V RG = 10 Ω tf 100 td(off) td(on) 10 tr VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 1 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C 12 VDD = 450 V 300 V 150 V 500 10 400 8 VGS 300 6 200 4 VDS 100 2 ID = 3.5 A 1 0 0.1 1 10 100 0 0 ID - Drain Current - A 2 4 6 8 10 12 14 QG - Gate Charge - nC REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 10 VGS = 10 V 1 0V 0.1 Pulsed 0.01 trr - Reverse Recovery Time - ns 100 IF - Diode Forward Current - A Crss 100 di/dt = 100 A/μs VGS = 0 V 10 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V 0.1 1 10 100 IF - Diode Forward Current - A Data Sheet D18786EJ1V0DS 5 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 2SK4082 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 120 Energy Derating Factor - % IAS - Single Avalanche Current - A 10 IAS = 2 A EAS = 240 mJ 1 VDD = 150 V RG = 25 Ω VGS = 20 → 0 V Starting Tch = 25°C 0.1 0.01 VDD = 150 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 2 A 100 80 60 40 20 0 0.1 1 10 100 1000 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C L - Inductive Load - H PACKAGE DRAWING (Unit: mm) EQUIVALENT CIRCUIT Isolated TO-220 (MP-45F) Drain 4.7±0.2 10.0±0.3 3.2±0.2 2.54±0.2 Body Diode 1.47 MAX Source 13.5 MAX. 3.0 TYP. 3.30±0.20 15.87±0.3 Gate 2.76±0.2 0.8±0.2 2.54 TYP. 2.54 TYP. 0.50±0.1 1. Gate 2. Drain 3. Source 1 2 3 Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 Data Sheet D18786EJ1V0DS 2SK4082 • The information in this document is current as of June, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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