DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ687 SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A) RDS(on)3 = 20 mΩ MAX. (VGS = −2.5 V, ID = −10 A) • 2.5 V drive available • Avalanche capability ratings ORDERING INFORMATION PART NUMBER 2SJ687-ZK-E1-AY Note 2SJ687-ZK-E2-AY Note LEAD PLATING PACKING PACKAGE Pure Sn (Tin) Tape 2500 p/reel TO-252 (MP-3ZK) 0.27 g TYP. Note Pb-free (This product does not contain Pb in external electrode.) (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −20 V Gate to Source Voltage (VDS = 0 V) VGSS m12 V Drain Current (DC) (TC = 25°C) ID(DC) m20 A ID(pulse) m60 A PT1 36 W Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) PT2 1.0 W Channel Temperature Tch 150 °C °C Tstg −55 to +150 Single Avalanche Current Note2 IAS −20 A Single Avalanche Energy Note2 EAS 40 mJ Storage Temperature Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = −10 V, RG = 25 Ω, VGS = −12 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18719EJ2V0DS00 (2nd edition) Date Published May 2007 NS Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2007 2SJ687 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V −10 μA <R> Gate Leakage Current IGSS VGS = m12 V, VDS = 0 V m100 nA <R> Gate to Source Cut-off Voltage VGS(off) VDS = −10 V, ID = −1 mA −0.6 −1.45 V | yfs | VDS = −10 V, ID = −10 A 20 RDS(on)1 VGS = −4.5 V, ID = −10 A 5.4 7.0 mΩ RDS(on)2 VGS = −3.0 V, ID = −10 A 7.1 9.0 mΩ RDS(on)3 VGS = −2.5 V, ID = −10 A 10.8 20 mΩ Input Capacitance Ciss VDS = −10 V, 4400 pF Output Capacitance Coss VGS = 0 V, 1070 pF Reverse Transfer Capacitance Crss f = 1 MHz 760 pF Turn-on Delay Time td(on) VDD = −10 V, ID = −10 A, 36 ns Rise Time tr VGS = −4.5 V, 220 ns Turn-off Delay Time td(off) RG = 3 Ω 270 ns Fall Time tf 310 ns Total Gate Charge QG VDD = −16 V, 57 nC Gate to Source Charge QGS VGS = −4.5 V, 12 nC QGD ID = −20 A 28 nC VF(S-D) IF = −20 A, VGS = 0 V 0.85 Reverse Recovery Time trr IF = −20 A, VGS = 0 V, 200 ns Reverse Recovery Charge Qrr di/dt = −100 A/μs 240 nC Note Forward Transfer Admittance Drain to Source On-state Resistance Note Gate to Drain Charge Body Diode Forward Voltage Note −1.2 S 1.5 V Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω D.U.T. L RL 50 Ω PG. VGS = −12 → 0 V VDD RG PG. VGS(−) VGS Wave Form 0 VGS 10% 90% VDD VDS(−) − IAS BVDSS VDS ID VGS(−) 0 VDS Wave Form τ VDD Starting Tch τ = 1 μs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. PG. 2 IG = −2 mA RL 50 Ω VDD Data Sheet D18719EJ2V0DS VDS 90% 90% 10% 10% 0 td(on) tr td(off) ton tf toff 2SJ687 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 40 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 35 30 25 20 15 10 5 0 0 0 25 50 75 100 125 0 150 25 Tch - Channel Temperature - °C 50 75 100 125 150 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA -100 ID(pulse) ID(DC) -10 Po w RDS(on) Limited (VGS = −4.5 V) -1 er D PW = 1 ms is si p at io 10 ms n Li m it e d TC = 25°C Single Pulse -0.1 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A -1000 Rth(ch-A) = 125°C/Wi 100 10 Rth(ch-C) = 3.47°C/Wi 1 0.1 Single Pulse 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D18719EJ2V0DS 3 2SJ687 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS -100 VGS = −4.5 V -40 VDS = −10 V Pulsed -10 ID - Drain Current - A ID - Drain Current - A -60 −2.5 V -20 -1 Tch = −55°C −25°C 25°C 75°C 125°C 150°C -0.1 -0.01 -0.001 Pulsed 0 -0.0001 0 -1 -2 -3 0 -1 VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VGS(off) – Gate to Source Cut-off Voltage - V -2 -1.5 -1 -0.5 VDS = −10 V ID = −1 mA 0 -75 -25 25 75 125 175 100 Tch = −55°C −25°C 10 1 25°C 75°C 125°C 150°C 0.1 0.01 -0.001 -0.01 50 ID = −10 A Pulsed 30 20 10 0 -5 -10 -15 VGS - Gate to Source Voltage - V 4 -1 -10 -100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0 -0.1 VDS = −10 V Pulsed ID - Drain Current - A Tch - Channel Temperature - °C 40 -3 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE <R> -2 60 Pulsed 50 40 30 20 VGS = −2.5 V 10 0 -0.1 −4.5 V -1 -10 ID - Drain Current - A Data Sheet D18719EJ2V0DS -100 2SJ687 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 15 VGS = −2.5 V 10 −4.5 V 5 ID = −10 A Pulsed Ciss, Coss, Crss - Capacitance - pF -25 25 75 125 Coss 1000 Crss VGS = 0 V f = 1 MHz 100 -0.01 0 -75 Ciss 175 Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS -10 -100 -25 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns -1 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 td(off) tf tr 100 VDD = −10 V VGS = −4.5 V RG = 3 Ω 10 -0.1 td(on) -1 -5 VDD = −16 V −10 V −4 V -20 -4 -15 -3 VGS -10 -2 -5 -1 VDS ID = −20 A 0 -10 -100 0 0 10 20 30 40 50 ID - Drain Current - A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 60 10000 −4.5 V -10 VGS = 0 V −2.5 V -1 -0.1 Pulsed trr - Reverse Recovery Time - ns -100 IF - Diode Forward Current - A -0.1 VDS - Drain to Source Voltage - V 1000 100 -0.01 0 -0.5 -1 -1.5 VF(S-D) - Source to Drain Voltage - V di/dt = −100 A/μs VGS = 0 V 10 -0.1 -1 -10 -100 IF - Diode Forward Current - A Data Sheet D18719EJ2V0DS 5 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 2SJ687 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 120 Energy Derating Factor - % IAS - Single Avalanche Current - A -100 IAS = −20 A -10 EAS = 40 mJ Starting Tch = 25°C VDD = −10 V RG = 25 Ω VGS = −12 → 0 V -1 0.01 0.1 80 60 40 20 0 1 10 L - Inductive Load - mH 6 VDD = −10 V RG = 25 Ω VGS = −12 → 0 V IAS ≤ −20 A 100 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C Data Sheet D18719EJ2V0DS 2SJ687 PACKAGE DRAWING (Unit: mm) TO-252 (MP-3ZK) 2.3±0.1 1.0 TYP. 6.5±0.2 5.1 TYP. 4.3 MIN. 0.5±0.1 No Plating 1.14 MAX. 3 0.51 MIN. 2 0.8 1 6.1±0.2 10.4 MAX. (9.8 TYP.) 4.0 MIN. 4 No Plating 0 to 0.25 0.5±0.1 0.76±0.12 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1.0 EQUIVALENT CIRCUIT Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Data Sheet D18719EJ2V0DS 7 2SJ687 • The information in this document is current as of May, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1