DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3918 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3918 is N-channel MOS FET device that PART NUMBER PACKAGE 2SK3918 TO-251 (MP-3) 2SK3918-ZK TO-252 (MP-3ZK) features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES (TO-251) • Low on-state resistance RDS(on)1 = 7.5 mΩ MAX. (VGS = 10 V, ID = 24 A) • Low Ciss: Ciss = 1300 pF TYP. • 5 V drive available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 25 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±48 A ID(pulse) ±192 A Total Power Dissipation (TC = 25°C) PT1 29 W Total Power Dissipation PT2 1.0 W Channel Temperature Tch 150 °C Drain Current (pulse) Note1 Tstg −55 to +150 °C Single Avalanche Current Note2 IAS 22 A Single Avalanche Energy Note2 EAS 48 mJ Storage Temperature (TO-252) Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17077EJ3V0DS00 (3rd edition) Date Published January 2005 NS CP(K) Printed in Japan The mark shows major revised points. 2004 2SK3918 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 25 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA VGS(off) VDS = 10 V, ID = 1 mA 2.0 2.5 3.0 V | yfs | VDS = 10 V, ID = 12 A 6 12 RDS(on)1 VGS = 10 V, ID = 24 A 5.9 7.5 mΩ RDS(on)2 VGS = 5.0 V, ID = 12 A 11 22.2 mΩ Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) Rise Time tr Turn-off Delay Time td(off) Fall Time S VDS = 10 V 1300 pF VGS = 0 V 310 pF 220 pF VDD = 12.5 V, ID = 24 A 13 ns VGS = 10 V 14 ns 38 ns 14 ns f = 1 MHz RG = 10 Ω tf Total Gate Charge QG VDD = 20 V 28 nC Gate to Source Charge QGS VGS = 10 V 5 nC 10 nC Gate to Drain Charge QGD Body Diode Forward Voltage Note ID = 48 A VF(S-D) IF = 48 A, VGS = 0 V 0.98 V Reverse Recovery Time trr IF = 48 A, VGS = 0 V 27 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 15 nC Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% IAS VDS VDS ID Starting Tch τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE PG. 2 50 Ω 10% 0 10% Wave Form VDD D.U.T. IG = 2 mA 90% VDS VGS 0 BVDSS RL VDD Data Sheet D17077EJ3V0DS td(on) tr ton td(off) tf toff 2SK3918 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 35 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 30 25 20 15 10 0 5 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 100 PW = 100 µs ID(DC) RDS(on) Limited (at VGS = 10 V) 10 1 ms Power Dissipation Limited 1 10 ms TC = 25°C Single pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A ID(pulse) Rth(ch-A) = 125°C/W 100 10 Rth(ch-C) = 4.31°C/W 1 0.1 Single pulse 0.01 100 µ 1m 10 m 100 m 1 PW - Pulse Width - s Data Sheet D17077EJ3V0DS 10 100 1000 3 2SK3918 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 200 1000 ID - Drain Current - A ID - Drain Current - A VGS = 10 V 150 100 5.0 V 50 100 Tch = −55°C 25°C 75°C 125°C 150°C 10 1 0.1 VDS = 10 V Pulsed Pulsed 0 0.01 0 1 2 3 0 VDS - Drain to Source Voltage - V 2 1 RDS(on) - Drain to Source On-state Resistance - mΩ 50 100 150 | yfs | - Forward Transfer Admittance - S 3 100 5 6 1 VDS = 10 V Pulsed 0.1 0.1 1 10 100 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 Pulsed 15 VGS = 5.0 V 10 10 V 5 0 1 10 100 1000 15 Pulsed 10 ID - Drain Current - A 4 4 Tch = −55°C 25°C 75°C 125°C 150°C 10 200 RDS(on) - Drain to Source On-state Resistance - mΩ VGS(off) - Gate Cut-off Voltage - V VDS = 10 V ID = 1 mA 0 3 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 4 -50 2 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 0 -100 1 ID = 24 A 5 0 0 5 10 15 VGS - Gate to Source Voltage - V Data Sheet D17077EJ3V0DS 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 15 10 VGS = 10 V 5 ID = 24 A Pulsed -50 0 50 100 150 Ciss 1000 Coss VGS = 0 V f = 1 MHz 100 0.01 200 Tch - Channel Temperature - °C td(off) tr td(on) VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 30 VDD =12.5 V VGS = 10 V RG = 10 Ω 10 10 100 12 ID = 48 A, 42 A (at VDD = 5 V) 25 10 VDD = 20 V 12.5 V 5V 20 8 15 6 VGS 10 4 5 2 VDS 0 1 0.1 1 10 0 0 100 10 20 30 QG - Gate Charge - nC ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 trr - Reverse Recovery Time - ns 1000 IF - Diode Forward Current - A 1 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 tf 0.1 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 100 Crss VGS = 10 V 100 10 0V 1 0.1 di/dt = 100 A/µs VGS = 0 V 100 10 Pulsed 0.01 1 0 0.5 1 1.5 1 10 100 IF - Diode Forward Current - A VF(S-D) - Source to Drain Voltage - V Data Sheet D17077EJ3V0DS 5 VGS - Gate to Source Voltage - V 0 -100 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3918 2SK3918 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 120 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 IAS = 22 A EAS = 48 mJ 10 VDD = 12.5 V RG = 25 Ω VGS = 20 → 0 V Starting Tch= 25°C 1 0.01 80 60 40 20 0 0.1 1 10 L - Inductive Load - mH 6 VDD = 12.5 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 22 A 100 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C Data Sheet D17077EJ3V0DS 2SK3918 PACKAGE DRAWINGS (Unit: mm) 1) TO-251 (MP-3) 2) TO-252 (MP-3ZK) 2.3 ±0.1 0.5 ±0.1 6.1 ±0.2 1 2 1.14 MAX. 1.02 TYP. 2.3 TYP. 3 No Plating 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1. Gate 2. Drain 3. Source 4. Fin (Drain) 0 to 0.25 0.5±0.1 0.76±0.12 2.3 0.5 ±0.1 0.76 ±0.1 2.3 TYP. No Plating 0.51 MIN. 4.0 MIN. No Plating 9.3 TYP. 1.14 MAX. 16.1 TYP. 3 1.8 ±0.2 2 0.5±0.1 4 0.8 4.0 MIN. 1 2.3±0.1 1.0 TYP. 6.5±0.2 5.1 TYP. 4.3 MIN. 4 6.1±0.2 10.4 MAX. (9.8 TYP.) Mold Area 0.7 TYP. 6.6 ±0.2 5.3 TYP. 4.3 MIN. 1.0 EQUIVALENT CIRCUIT Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Data Sheet D17077EJ3V0DS 7 2SK3918 • The information in this document is current as of January, 2005. The information is subject to change without notice. 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