DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3991 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3991 is N-channel MOS FET device that PART NUMBER PACKAGE 2SK3991 TO-251 (MP-3) 2SK3991-ZK TO-252 (MP-3ZK) features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance (TO-251) RDS(on)1 = 13.0 mΩ MAX. (VGS = 10 V, ID = 15 A) • Low C iss: C iss = 830 pF TYP. • 5 V drive available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 25 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±30 A ID(pulse) ±120 A Total Power Dissipation (TC = 25°C) PT1 21 W Total Power Dissipation PT2 1.0 W Channel Temperature Tch 150 °C Drain Current (pulse) Note1 Tstg −55 to +150 °C Single Avalanche Current Note2 IAS 15 A Single Avalanche Energy Note2 EAS 22.5 mJ Storage Temperature (TO-252) Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17434EJ2V0DS00 (2nd edition) Date Published February 2005 NS CP(K) Printed in Japan The mark ★ shows major revised points. 2005 2SK3991 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 25 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA VGS(off) VDS = 10 V, ID = 1 mA 2.0 2.5 3.0 V | yfs | VDS = 10 V, ID = 7.5 A 5 10 RDS(on)1 VGS = 10 V, ID = 15 A 10.3 13.0 mΩ RDS(on)2 VGS = 5.0 V, ID = 15 A 17.4 30.2 mΩ Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note S Input Capacitance Ciss VDS = 10 V 830 pF Output Capacitance Coss VGS = 0 V 200 pF Reverse Transfer Capacitance Crss f = 1 MHz 140 pF Turn-on Delay Time td(on) VDD = 12.5 V, ID = 15 A 10 ns tr VGS = 10 V 9 ns td(off) RG = 10 Ω 26 ns 10 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 20 V 17 nC Gate to Source Charge QGS VGS = 10 V 3 nC QGD ID = 30 A 6 nC Gate to Drain Charge Body Diode Forward Voltage Note VF(S-D) IF = 30 A, VGS = 0 V 0.99 V Reverse Recovery Time trr IF = 30 A, VGS = 0 V 23 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 14 nC Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS ID VDS τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 RL VDD Data Sheet D17434EJ2V0DS td(on) ton tf toff 2SK3991 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 25 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 20 15 10 5 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 TC - Case Temperature - °C TC - Case Temperature - °C ★ FORWARD BIAS SAFE OPERATING AREA 1000 ID(pulse) = 120 A PW = 100 µs 10 RDS(on) Limited (at VGS = 10 V) Power Dissipation Limited 1 1 ms 10 ms TC = 25°C Single pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V ★ TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A ID(DC) = 30 A 100 Rth(ch-A) = 125°C/W 100 10 Rth(ch-C) = 5.95°C/W 1 0.1 Single pulse 0.01 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D17434EJ2V0DS 3 2SK3991 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 150 1000 ID - Drain Current - A ID - Drain Current - A Pulsed VGS = 10 V 100 50 5.0 V 100 Tch = −55°C −25°C 25°C 75°C 125°C 150°C 10 1 0.1 0 VDS = 10 V Pulsed 0.01 0 1 2 3 4 5 0 1 VDS - Drain to Source Voltage - V 4 3 2 1 0 25 75 125 | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V VDS = 10 V ID = 1 mA -25 Tch = −55°C −25°C 25°C 75°C 125°C 150°C 10 1 0.1 0.1 1 25 20 VGS = 5.0 V 10 V 5 0 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ Pulsed 10 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 Pulsed 40 30 20 ID = 15 A 10 0 0 5 10 15 VGS - Gate to Source Voltage - V ID - Drain Current - A 4 10 ID - Drain Current - A 30 1 6 VDS = 10 V Pulsed 175 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10 5 100 Tch - Channel Temperature - °C 15 4 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 6 -75 3 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 5 2 Data Sheet D17434EJ2V0DS 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 50 10000 ID = 15 A Pulsed 30 VGS = 5.0 V 20 10 10 V -25 25 75 125 Ciss Coss 100 Crss VGS = 0 V f = 1 MHz 10 0.01 0 -75 1000 175 SWITCHING CHARACTERISTICS 10 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 24 td(off) tf td(on) 10 tr VDD = 12.5 V VGS = 10 V RG = 10 Ω VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 1 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C 1 12 ID = 30 A VDD = 20 V 12.5 V 5V 20 16 10 8 12 6 VGS 8 4 4 2 VDS 0 0.1 1 10 100 0 0 5 ID - Drain Current - A 10 15 20 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 0.1 VGS - Gate to Source Voltage - V 40 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3991 100 VGS = 10 V 10 0V 1 0.1 10 di/dt = 100 A/µs VGS = 0 Pulsed 1 0.01 0 0.5 1 1.5 1 10 100 IF - Diode Forward Current - A VF(S-D) - Source to Drain Voltage - V Data Sheet D17434EJ2V0DS 5 2SK3991 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 120 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 IAS = 15 A 10 EAS = 22.5 mJ VDD = 12.5 V RG = 25 Ω VGS = 20 → 0 V Starting Tch = 25°C 1 0.01 80 60 40 20 0 0.1 1 10 L - Inductive Load - mH 6 VDD = 12.5 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 15 A 100 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C Data Sheet D17434EJ2V0DS 2SK3991 PACKAGE DRAWINGS (Unit: mm) 1) TO-251 (MP-3) 2) TO-252 (MP-3ZK) 2.3 ±0.1 0.5 ±0.1 6.1 ±0.2 1 2 1.14 MAX. 1.02 TYP. 2.3 TYP. 3 No Plating 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1. Gate 2. Drain 3. Source 4. Fin (Drain) 0 to 0.25 0.5±0.1 0.76±0.12 2.3 0.5 ±0.1 0.76 ±0.1 2.3 TYP. No Plating 0.51 MIN. 4.0 MIN. No Plating 9.3 TYP. 1.14 MAX. 16.1 TYP. 3 1.8 ±0.2 2 0.5±0.1 4 0.8 4.0 MIN. 1 2.3±0.1 1.0 TYP. 6.5±0.2 5.1 TYP. 4.3 MIN. 4 6.1±0.2 10.4 MAX. (9.8 TYP.) Mold Area 0.7 TYP. 6.6 ±0.2 5.3 TYP. 4.3 MIN. 1.0 EQUIVALENT CIRCUIT Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Data Sheet D17434EJ2V0DS 7 2SK3991 • The information in this document is current as of February, 2005. The information is subject to change without notice. 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