DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3507 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3507 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, PART NUMBER PACKAGE 2SK3507-ZK TO-252 (MP-3ZK) designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V drive available • Low on-state resistance RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 11 A) • Low gate charge QG = 8.5 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 22 A) • Built-in G-S protection diode • Surface mount package available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±16 V Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) Total Power Dissipation Note2 ID(DC) ±22 A ID(pulse) ±45 A PT1 20 W PT2 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Single Avalanche Current Note3 IAS 10 A Single Avalanche Energy Note3 EAS 10 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on glass epoxy board of 1 inch x 1 inch x 1.6 mm 3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D15387EJ1V0DS00 (1st edition) Date Published December 2003 NS CP(K) Printed in Japan 2001 2SK3507 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±16 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.5 V | yfs | VDS = 4.0 V, ID = 11 A 6 RDS(on)1 VGS = 10 V, ID = 11 A 28 45 mΩ RDS(on)2 VGS = 4.5 V, ID = 11 A 46 76 mΩ Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note S Input Capacitance Ciss VDS = 10 V 360 pF Output Capacitance Coss VGS = 0 V 125 pF Reverse Transfer Capacitance Crss f = 1 MHz 65 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 11 A 6.6 ns tr VGS = 10 V 3.6 ns td(off) RG = 10 Ω 16 ns 5.3 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 24 V 8.5 nC Gate to Source Charge QGS VGS = 10 V 2 nC QGD ID = 22 A 2.1 nC VF(S-D) IF = 22 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 22 A, VGS = 0 V 31 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 26 nC Gate to Drain Charge Body Diode Forward Voltage Note Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% IAS VDS ID VDS τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 BVDSS RL VDD Data Sheet D15387EJ1V0DS td(on) ton tf toff 2SK3507 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 30 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 20 10 0 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 ID(pulse) PW = 10 µs 10 RDS(on) Limited (at VGS = 10 V) 100 µs DC Power Dissipation Limited 1 ms 1 10 ms TC = 25°C Single pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A ID(DC) Rth(ch-A) = 83.3°C/W 100 10 Rth(ch-C) = 6.25°C/W 1 0.1 Single pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 PW - Pulse Width - s Data Sheet D15387EJ1V0DS 10 100 1000 3 2SK3507 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 60 100 VGS = 10 V ID - Drain Current - A ID - Drain Current - A 50 40 7V 30 20 4.5 V 10 TA = −55°C 25°C 75°C 150°C 1 0.1 10 VDS = 10 V Pulsed Pulsed 0.01 0 0 1 2 3 4 5 0 6 VDS = 10 V ID = 1 mA 2 1.5 1 0.5 0 RDS(on) - Drain to Source On-state Resistance - mΩ 50 100 150 5 100 TA = −55°C 25°C 75°C 150°C 10 1 VDS = 4.0 V Pulsed 0.1 0.01 0.1 1 10 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 140 Pulsed 120 100 80 VGS = 4.5 V 7V 10 V 60 40 20 0 0.1 1 10 100 120 ID = 11 A Pulsed 100 80 60 40 20 ID - Drain Current - A 4 4 Tch - Channel Temperature - °C RDS(on) - Drain to Source On-state Resistance - mΩ VGS(off) - Gate Cut-off Voltage - V 3 0 3 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -50 2 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V 2.5 1 0 0 5 10 15 VGS - Gate to Source Voltage - V Data Sheet D15387EJ1V0DS 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 80 ID = 11 A Pulsed Ciss, Coss, Crss - Capacitance - pF VGS = 4.5 V 60 7V 40 10 V 20 1000 Ciss 100 0 50 100 Coss Crss 10 0.01 0 -50 VGS = 0 V f = 1 MHz 150 0.1 SWITCHING CHARACTERISTICS 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 12 30 VDD = 15 V VGS = 10 V RG = 10 Ω 100 td(off) tf 10 td(on) tr VDS - Drain to Source Voltage - V 1000 td(on), tr, td(off), tf - Switching Time - ns 10 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C VDS = 24 V 15 V 6V 25 20 10 8 15 6 VGS 4 10 5 2 VDS ID = 22 A 0 0 1 0.1 1 10 0 100 1 2 3 4 5 6 7 ID - Drain Current - A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100 1000 trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 1 VGS = 10 V 10 0V 1 0.1 8 9 di/dt = 100 A/µs VGS = 0 V 100 10 Pulsed 0.01 1 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V 0.1 1 10 100 IF - Diode Forward Current - A Data Sheet D15387EJ1V0DS 5 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3507 2SK3507 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 10 120 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 IAS = 10 A EAS = 10 mJ 1 VDD = 15 V RG = 25 Ω VGS = 20 → 0 V Starting Tch = 25°C 0.1 0.01 80 60 40 20 0 0.1 1 10 L - Inductive Load - mH 6 VDD = 15 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 10 A 100 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C Data Sheet D15387EJ1V0DS 2SK3507 PACKAGE DRAWING (Unit: mm) TO-252 (MP-3ZK) 2.3±0.1 1.0±0.3 6.5±0.2 5.1±0.3 4.3 MIN. 0.5±0.1 No Plating 3 1.14 MAX. 0.51 MIN. 2 0.8 1 6.1±0.2 10.3 MAX. (9.7 TYP.) 4.0 MIN. 4 No Plating 0.03 to 0.25 0.5±0.1 0.77±0.1 2.3 2.3 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1.0 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D15387EJ1V0DS 7 2SK3507 • The information in this document is current as of December, 2003. The information is subject to change without notice. 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