3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER FEATURES UPC2762T UPC2763T GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 27 mA • 7 dBm P1dB TYPICAL AT 1.9 GHz 24 • LOW VOLTAGE: 3 Volts 22 • WIDE BANDWIDTH: 2.9 GHz at -3 dB (UPC2762T) 20 UPC2763T Gain, GS (dB) • HIGH GAIN: 20 dB at 1.9 GHz (UPC2763T) • SUPER SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE 18 16 14 UPC2762T 12 DESCRIPTION 10 The UPC2762T and UPC2763T are Silicon Monolithic integrated circuits which are manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. These amplifiers were designed for 900 MHz and 1.9 GHz receivers in cellular, cordless telephone and PCN applications. Operating on a 3 volt supply these ICs are ideally suited for hand-held, portable designs. 8 100 300 1000 3000 Frequency, f (MHz) NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25°C, ZL = ZS = 50Ω, VCC = 3.0 V) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS UPC2762T T06 UNITS MIN UPC2763T T06 TYP MAX 27 35 11 11.5 13 14.5 16 17.5 MIN TYP MAX 27 35 20 19.5 23 22.5 ICC Circuit Current (no signal) mA GS Small Signal Gain, dB dB fU1 Upper Limit Operating Frequency (The gain at fu is 3 dB down from the gain at 0.1 GHz) GHz 2.7 2.9 2.0 2.4 P1dB Output Power at 1 dB Compression Point, f = 900 MHz f = 1900 MHz dBm dBm +5.5 +4.5 +8 +7 +7 +4 +9.5 +6.5 PSAT Saturated Output Power, f = 900 MHz f = 1900 MHz dBm dBm 9 8.5 6.5 7 NF f = 900 MHz f = 1900 MHz 16 16.5 11 8 Noise Figure, f = 900 MHz f = 1900 MHz dB dB Input Return Loss, f = 900 MHz f = 1900 MHz dB dB 6 5.5 9 8.5 8 9 11 12 Output Return Loss, f = 900 MHz f = 1900 MHz dB dB 8 9 11 12 5 6 8 9 ISOL Isolation, f = 900 MHz f = 1900 MHz dB dB 22 20 27 25 25 24 30 29 OIP3 SSB Output Third Order Intercept Point f = 900, 902 MHz RLIN RLOUT f = 1900, 1902 MHz RTH (J-A) Thermal Resistance (Junction to Ambient) Free Air Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB Note: 1.The gain at fU is 3 dB down from the gain at 100 MHz. dBm dBm °C/W °C/W 8 8.5 +12 +9 5.5 5.5 7.0 7.0 +17 +11 620 230 620 230 California Eastern Laboratories UPC2762T, UPC2763T ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS VCC RECOMMENDED OPERATING CONDITIONS UNITS RATINGS SYMBOLS PARAMETERS V 3.6 VCC Supply Voltage V 2.7 3 3.3 TOP Operating Temperature °C -40 25 85 Supply Voltage ICC Total Supply Current mA 70 PIN Input Power dBm +10 PT Total Power Dissipation2 mW 280 TOP Operating Temperature °C -40 to +85 TSTG Storage Temperature °C -55 to +150 UNITS MIN TYP MAX TEST CIRCUIT VCC 1000 pF Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB (TA = 85°C). L = 300 nH 6 50 Ω IN 50 Ω 4 1 OUT 1000 pF 1000 pF 2, 3, 5 TYPICAL PERFORMANCE CURVES (TA = 25°C) UPC2762T/63T SUPPLY CURRENT vs. OPERATING TEMPERATURE UPC2762T/63T SUPPLY CURRENT vs. SUPPLY VOLTAGE 50 50 40 Supply Current, ICC (mA) 30 20 10 40 30 20 10 0 0 0 2 1 3 -60 4 Supply Voltage, VCC (V) 0 20 60 40 80 100 UPC2763T NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE 20 24 18 GS 12 10 10 VCC = 3.3 V 8 8 GS VCC = 3.3 V 20 Gain, GS (dB) VCC = 2.7 V Noise Figure, NF (dB) 22 VCC = 3.3 V VCC = 3.0 V 16 Gain, GS (dB) -20 Operating Temperature, TOP (°C) UPC2762T NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE 14 -40 VCC = 3.0 V 18 VCC = 2.7 V 16 14 7 VCC = 3.3 V 12 6 NF NF 6 6 VCC = 3.0 V VCC = 2.7 V 4 4 2 2 0.1 0.3 1.0 Frequency, f (GHz) 3.0 10 5 VCC = 3.0 V VCC = 2.7 V 4 8 6 0.1 0.3 1.0 Frequency, f (GHz) 3 3.0 Noise Figure, NF (dB) Supply Current, ICC (mA) VCC = 3.0 V UPC2762T, UPC2763T TYPICAL PERFORMANCE CURVES (TA = 25°C) UPC2763T GAIN vs. FREQUENCY AND TEMPERATURE UPC2762T GAIN vs. FREQUENCY AND TEMPERATURE 24 18 TA = -40˚C TA = +85˚C 22 16 20 Gain, GS (dB) Gain, GS (dB) TA = +85˚ C 14 12 TA = +25˚ C TA = -40˚ C TA = +25˚ C TA = +25˚C 18 TA = +25˚C TA = -40˚C TA = +85˚C 16 14 12 TA = -40˚ C 10 10 8 VCC = 3.0V VCC = 3.0V 8 0.1 0.3 1.0 6 0.1 3.0 0.3 1.0 Frequency, f (GHz) UPC2762T INPUT AND OUTPUT RETURN LOSS vs. FREQUENCY UPC2763T INPUT AND OUTPUT RETURN LOSS vs. FREQUENCY 0 0 VCC = 3.0V VCC = 3.0V RLout RLin -10 Return Loss (dB) Return Loss (dB) -10 RLout -20 RLin -20 -30 -30 -40 -40 0.1 0.3 1.0 3.0 0.1 0.3 1.0 3.0 Frequency, f (GHz) Frequency, f (GHz) UPC2762T ISOLATION vs. FREQUENCY UPC2763T ISOLATION vs. FREQUENCY 10 0 VCC = 3.0V VCC = 3.0V 0 -10 Isolation, ISOL (dB) Isolation, ISOL (dB) 3.0 Frequency, f (GHz) -10 -20 -30 -20 -30 -40 -50 -40 0.1 0.3 1.0 Frequency, f (GHz) 3.0 0.1 0.3 1.0 Frequency, f (GHz) 3.0 UPC2762T, UPC2763T TYPICAL PERFORMANCE CURVES (TA = 25°C) UPC2762T OUTPUT POWER vs. INPUT POWER UPC2763T OUTPUT POWER vs. INPUT POWER 15 15 VCC = 3.3V VCC = 3.3V f = 900 MHZ Output Power, POUT (dBm) Output Power, POUT (dBm) f = 900 MHZ 10 VCC = 3.0V 5 VCC = 2.7V 0 -5 -10 10 VCC = 3.0V 5 VCC = 2.7V 0 -5 -10 -25 -20 -15 -10 -5 0 -25 Input Power, PIN (dBm) -5 0 15 Pin = +3 dBm Saturated Output Power, PSAT (dBm) Saturated Output Power, PSAT (dBm) -10 UPC2763T SATURATED OUTPUT POWER vs. FREQUENCY AND VOLTAGE 13 VCC = 3.3V 11 VCC = 3.0V 9 VCC = 2.7V 7 5 Pin = -3 dBm 13 VCC = 3.3V 11 VCC = 3.0V 9 VCC = 2.7V 7 5 3 3 0.1 0.3 1.0 0.1 3.0 0.3 1.0 3.0 Frequency, f (GHz) Frequency, f (GHz) UPC2762T SATURATED OUTPUT POWER vs. FREQUENCY AND TEMPERATURE UPC2763T SATURATED OUTPUT POWER vs. FREQUENCY AND TEMPERATURE 13 15 Pin = +3 dBm TA = +25˚ C Saturated Output Power, PSAT (dBm) Saturated Output Power, PSAT (dBm) -15 Input Power, PIN (dBm) UPC2762T SATURATED OUTPUT POWER vs. FREQUENCY AND VOLTAGE 11 -20 TA = +85˚ C 9 TA = -40˚ C 7 5 3 Pin = -3 dBm 13 TA = +85˚ C 11 TA = -40˚ C TA = +25˚ C 9 7 5 3 0.1 0.3 1.0 Frequency, f (GHz) 3.0 0.1 0.3 1.0 Frequency, f (GHz) 3.0 UPC2762T, UPC2763T TYPICAL SCATTERING PARAMETERS (TA = 25°C) UPC2762T S11 vs. FREQUENCY (VCC = 3.0 V) 0.1 GHz 0.9 GHz UPC2762T S22 vs. FREQUENCY (VCC = 3.0 V) 1.9 GHz 0.1 GHz 1.9 GHz 0.9 GHz UPC2763T S11 vs. FREQUENCY (VCC = 3.0 V) UPC2763T S22 vs. FREQUENCY (VCC = 3.0 V) 0.1 GHz 0.1 GHz 0.9 GHz 1.9 GHz 1.9 GHz 0.9 GHz UPC2762T, UPC2763T OUTLINE DIMENSIONS (Units in mm) LEAD CONNECTIONS 3 +0.2 1.5 -0.1 2 3 0.95 4 1.9±0.2 2 0.95 5 1 +0.2 1.1 -0.1 6 C1Z +0.2 2.8 -0.3 2.9±0.2 (Bottom View) (Top View) PACKAGE OUTLINE T06 1 1. 2.. 3. 4. 5. 6. -0.05 0.3 +0.10 INPUT GND GND OUTPUT GND VCC 4 4 3 5 5 2 6 6 1 Note: Package Marking C1Z: UPC2762T C2A: UPC2763T 0.13±0.1 0.8 0 to 0.1 Note: All dimensions are typical unless otherwise specified. EQUIVALENT CIRCUIT RECOMMENDED P.C.B. LAYOUT (Units in mm) VCC 3.10 OUT 3 4 IN 2 0.95 5 1 6 0.5 MIN 1.0 MIN 1.0 MIN ORDERING INFORMATION PART NUMBER QTY UPC2762T-E3 UPC2763T-E3 3K/Reel 3K/Reel Note: Embossed Tape, 8 mm wide. EXCLUSIVE AGENT FOR NEC Corporation RF & MICROWAVE SEMICONDUCTOR PRODUCTS - U.S. & CANADA CALIFORNIA EASTERN LABORATORIES, INC · DATA SUBJECT TO CHANGE WITHOUT NOTICE Headquarters · 4590 Patrick Henry Drive · Santa Clara, CA 95054-1817 · (408) 988-3500 · Telex 34-6393/FAX (408) 988-0279