DATA SHEET MOS INTEGRATED CIRCUIT µPD16876 SINGLE Pch HIGH-SIDE SWITCH FOR USB DESCRIPTION The µPD16876 is a power switch IC with an overcurrent limiter that is used for the power bus of a Universal Serial Bus (USB). This product has one Pch power MOSFET circuits, which has a low-on resistance (100 mΩ TYP.), in its switching block. This product boasts an operating current consumption of as low as 100 µA (MAX.). In addition, the IC is also equipped with an overcurrent detector that is essential for a host/hub controller conforming to the USB Standard, so that the IC can report an overcurrent to the controller. Moreover, a thermal shutdown circuit and an undervoltage lockout circuit are also provided as the protection circuits of the IC. This product has one channel of power switch, control input pin, and flag output pin to simultaneously control one USB port with a single IC. FEATURES • One P-ch power MOSFET circuit • Overcurrent detector that outputs active-low control signal from detection report pin • Overcurrent limiter to prevent system voltage drop • Thermal shutdown circuit • Undervoltage lockout circuit • This control circuit can be turned on and off independently of the others by a control pin. • 8-pin SOP package ORDERING INFORMATION Part Number Package µPD16876G 8-pin SOP (5.72 mm (225)) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. S14288EJ1V0DS00 (1st edition) Date Published April 2001 N CP(K) Printed in Japan © 2001 µPD16876 BLOCK DIAGRAM IN (Input) 5 7 OUT (Output) IN (Input) 6 8 OUT (Output) Reference voltage LATCH (Input) 1 Gate control FLG (Flag output) 3 Overcurrent detection block Overvoltage lockout circuit Thermal shutdown circuit 4 2 GND CTL (Control Input) NOTES ON CORRECT USE • No internal resistor is connected to input pins LATCH (pin 1) and CTL (pin 2). When using the µPD16876, therefore, be sure to set the voltage level of these input pins to “H” or “L”. • Plural terminal (IN, OUT) is not only 1 terminal and connect all terminals. 2 Data Sheet S14288EJ1V0DS µPD16876 PIN CONFIGURATION (Top View) LATCH 1 8 OUT CTL 2 7 OUT FLG 3 6 IN GND 4 5 IN 8-pin SOP PIN DESCRIPTION Pin No. Pin Name Pin Function 1 LATCH 2 CTL Control input: Active-low, TTL input 3 FLG Detection flag (output): Active-low, Nch open-drain 4 GND Ground 5/6 IN 7/8 OUT Select LATCH function. “H” is effective LATCH function. Power input: Source of MOSFET for output. Power supply to internal circuitry of IC Switch output: Drain of MOSFET for output. Usually, connected to load. TRUTH TABLE (H: High level, L: Low level, ON: Output on, OFF: Output off, X: H or L) CTL (In) FLG (Out) OUT (Out) L H ON Normal operation H H OFF Switch OFF/Stand by mode L L ON Overcurrent detection X L OFF Thermal shutdown circuit operation X L OFF Undervoltage lockout circuit operation LATCH H (LATCH mode) L (non LATCH mode) Operation mode Operation mode After overcurrent detection circuit operates, output is latched. After overcurrent detection circuit operates, output is operated limited current function. Data Sheet S14288EJ1V0DS 3 µPD16876 ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified, TA = 25°°C) Parameter Symbol Conditions Ratings Unit Input voltage VIN −0.3 to +6 V Flag voltage VFLG −0.3 to +6 V Flag current IFLG 50 mA Output voltage VOUT VIN+0.3 V Output current IOUT +0.5 (VIN = VCTL = 5 V) −0.1 (VIN = 0 V, VOUT = 5 V) A DC Pulse width ≤ Single 100 µs pulse −0.3 to +6 V PD 300 mW TA −40 to +85 °C +150 °C −55 to +150 °C Control input VCTL Total power dissipation Operating temperature range Note +3 Junction temperature TCH MAX Storage temperature Tstg Note This product has an internal thermal shutdown circuit (operating temperature: 150°C or higher TYP.) RECOMMENDED OPERATING RANGE (Unless otherwise specified, TA = 25°°C) Parameter Symbol MIN. TYP. MAX. Unit Input voltage VIN +3 +5.5 V Operating temperature range TA 0 +70 °C 4 Data Sheet S14288EJ1V0DS µPD16876 ELECTRICAL SPECIFICATIONS DC Characteristics (Unless otherwise specified, VIN = +5 V, TA = +25°°C) Parameter Current consumption Symbol IDD Conditions MIN. TYP. MAX. Unit 1 5 µA VCTL = 0 V, OUT: open 80 µA 1.0 V VCTL = VIN, OUT: Open Input voltage, low VIL CTL pin Input voltage, high VIH CTL pin LATCH input voltage, low VIL LATCH pin LATCH input voltage, high VIH LATCH pin Control input current ICTL VCTL = 0 V 0.01 1 µA VCTL = VIN 0.01 1 µA TA = 0 to +70°C, IOUT = 500 mA 100 140 mΩ 200 mΩ 10 µA 1.25 A 1.25 A Output MOSFET on-resistance RON 2.0 V 1.5 3.5 V VIN = 3 to 5 V, TA = 0 to 70°C IOUT = 500 mA Output leakage current IO LEAK Overcurrent detector threshold ITH TA = 0 to +70°C 0.6 VIN = 3 to 5 V, TA = 0 to 70°C 0.5 V 0.9 Flag output resistance RON F IL = 10 mA 10 25 Ω Flag leakage current IO LEAK F VFLAG = 5 V 0.01 1 µA Undervoltage lockout circuit operating voltage VUVLO VIN: When rising 2.2 2.5 2.8 V VIN: When falling 2.0 2.3 2.6 V Hysteresis width 0.05 0.25 V AC Characteristics (Unless otherwise specified, VIN = +5 V, TA = +25°°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit 2.5 5 8 ms 10 µs Output transition rise time (ON) tRISE RL = 10 Ω per output Output transition fall time (OFF) tFALL RL = 10 Ω per output Overcurrent detection delay time tOVER Overcurrent detection output rise time tSRISE RL = 10 Ω per output 2.5 Minimum CTL high time tCTL CTL : L→H→L 20 CTL → FLG Delay time tC-F Delay Over Current Detect CTL1 → FLG4 µs 20 Data Sheet S14288EJ1V0DS 5 8 ms µs 10 µs 5 µPD16876 POINTS OF MEASUREMENT Output Transition Rise Time (ON)/Output Transition Fall Time (OFF) CTL pin: H→L/L→H 5 V/3.3 V CTL 90% 0V tRISE 5V tFALL 90% 90% VOUT 10% 0V Overcurrent Detection Delay Time/Minimum CTL High Time (LATCH = “L”) ITH IOUT VOUT tOVER tSRISE (Internal time) FLG 90% tCTL CTL 10% 6 Data Sheet S14288EJ1V0DS 10% µPD16876 Overcurrent Detection Delay Time/Minimum CTL High Time (LATCH = “H”) ITH IOUT VOUT tOVER tSRISE (Internal time) FLG 90% tCTL CTL 10% 10% FUNCTIONAL DESCRIPTION REFERENCE TABLE Function Overcurrent detection Characteristics Reference Value (TYP.) Refer to: Overcurrent detection Threshold 0.9 A p.8 1. Overcurrent detection Overcurrent detection delay time 20 µs p.8 1. Overcurrent detection p.11 On Detection of Overcurrent Slow-start repeat time 5 ms p.11 On Detection of Overcurrent Under voltage lockout circuit (UVLO) UVLO operating voltage VDD L→H 2.5 V VDD H→L 2.3 V Operation when power is turned on/off Output rise time tRISE 5 ms Output fall time tFALL 1 µs Thermal shutdown circuit Thermal shutdown circuit operating temperature 150°C or higher Data Sheet S14288EJ1V0DS p.8 2. Under Voltage Lockout Circuit (UVLO) p.9 3. Behavior When Power Is Turned ON/OFF p.12 When Thermal Shutdown Circuit Operates 7 µPD16876 DESCRIPTION OF FUNCTIONS 1. Overcurrent Detection This IC detects an overcurrent in a range of 0.6 to 1.25 A (0.9 A TYP.) (the USB Standard defines that an overcurrent is 0.5 A MAX.). When the IC detects an overcurrent, the FLG pin goes low (active) and reports the result of detection to the control IC. At this time, the switch is kept ON and the current limiter is activated. In this way, an overcurrent status that lasts for a long time can be prevented. By deasserted the CTL pin inactive by the control IC, the switch is turned OFF and the FLG pin goes back high. Therefore, the CTL signal must be deasserted inactive as soon as the controller IC has detected that the FLG pin has gone low, to avoid overheating this IC. Once the switch has been turned OFF, it turns back ON again only when the CTL signal is asserted active while the FLG pin is high. To prevent an inrush current being detected by mistake, a deadband time (overcurrent detection delay time) is set to elapse before the overcurrent detector is activated. The duration of this deadband time is 20 µs TYP. While the overcurrent limiter is activated, the power consumption of the device may abruptly increase. As a result, the junction temperature may also rise. Make sure that the CTL signal is deasserted inactive and that the switch is turned OFF before the absolute maximum rating is exceeded. 2. Undervoltage Lockout Circuit (UVLO) This circuit prevents malfunctioning of the switch due to fluctuation in supply voltage. When power is turned on (2.5 V or less TYP.) or off (2.3 V or less TYP.), the OUT and FLG pins have the following status: OUT: OFF FLG: “L” (= 0 V) 5V Output voltage 2.3 V 2.5 V 5V Input voltage The above figure does not show the actual waveform. For the related characteristic waveform, refer to Major Characteristic Curves. 8 Data Sheet S14288EJ1V0DS µPD16876 3. Behavior When Power Is Turned ON/OFF This IC performs a soft-start operation on power application. This is to prevent an overcurrent from flowing through the IC on power application while the high-capacity capacitor connected to the output pin is charged. Power ON: Soft start (2.5 to 8 ms) Power OFF: No control (10 µs MAX.) 5V Vin 0V 2.5 ms MIN. 8 ms MAX. 10 µ s MAX. 5V Vout 0V The above figure does not show the actual waveform. For the related characteristic waveform, refer to Major Characteristic Curves. 4. Output Latch Functional Change LATCH = “H”: This IC has the control terminal (LATCH terminal) which latches the output current limitation after over current detection. An output latch function is explained below. The output switch is turned off irrespective of the state of a CTL terminal after over current detection. Again, in order to make a switch into an ON state, it is necessary that a CTL terminal is setting to Low level. This function can be used, when you want to make a CTL terminal “L” fixation and to always consider as an ON state, or when a USB controller to switch-ON/OFF control is unnecessary. LATCH = “L”: A current limitation circuit operates after over current detection. A limitation function is continued until the over current is eliminated. After current detection, when abnormal condition is eliminated, output returns to an ON state. This function serves as specification which suited USB specification. Data Sheet S14288EJ1V0DS 9 µPD16876 OPERATION SEQUENCE Power ON/OFF 5V IN (Input) GND 5V OUT (Output) GND 5V Flg (Output) GND 5V 5V CTL (Input) GND Overcurrent detection threshold Iout If the CTL signal is asserted active after power has been turned ON, OUT executes the soft-start operation (output transition time: 8 ms MAX.). In addition, FLG output is fixed to “L” if the supply voltage is lower than the operating voltage of the undervoltage lockout circuit (UVLO) on power application. If all the CTL pins are inactive when power is supplied, the IC enters the standby status (IDD = 5 µA MAX.). When Control Signals Are Input 5V IN (Input) GND 5V OUT (Output) FLG (Output) CTL (Input) 10 GND 5V GND 5V GND Data Sheet S14288EJ1V0DS µPD16876 On Detection of Overcurrent 5V IN (input) 5V FLG (output) GND 5V CTL (input) OUT (output) GND GND 5V GND LATCH = "L" Iout Overcurrent detection threshold Inrush current 5V OUT (output) Slow start period Output is short-circuited Slow start period Output is short-circuited GND LATCH = "H" Iout Overcurrent detection threshold Inrush current If an overcurrent is detected after the overcurrent detection delay time of 20 µs, the IC executes a slow-start operation (output rise time: 5 ms TYP.) again. If an overcurrent is detected while the IC is executing the slow-start operation again, it is assumed that the output is short-circuited and the FLG pin goes low. When the CTL signal is deasserted inactive, OUT is turned OFF and FLG goes high. If the CTL signal is asserted active, OUT is turned back ON unless the undervoltage lockout circuit or thermal shutdown circuit is activated. When LATCH = “H”, output is turned off at the timing of FLG = “L”. Data Sheet S14288EJ1V0DS 11 µPD16876 When Thermal Shutdown Circuit Operates 5V IN (Input) Standby status Non-standby status GND 5V OUT (Output) FLG (Output) GND 5V GND 5V CTL (Input) Tch GND Thermal shutdown circuit operating temperature (falling) Thermal shutdown circuit operating temperature (rising) While the thermal shutdown circuit is activated, the output pins are in the OFF status. However, the IC does not enter the standby status even if all the CLT pins are deasserted inactive at the same time. The thermal shutdown circuit is not activated even if the junction temperature exceeds 150°C TYP. while the IC is in the standby mode (when CTL1 and CTL2 pins are inactive). TEST CIRCUIT 5V 10 kΩ 10 Ω LATCH OUT CTL OUT FLG IN GND IN 1 µF µ PD16876 12 Data Sheet S14288EJ1V0DS µPD16876 MAJOR CHARACTERISTIC CURVES (Unless otherwise specified, TA = 25°°C, VIN = 5 V) Total Power Dissipation PT vs. Ambient Temperature TA Total consumption PT (mW) 400 300 200 100 0 −40 0 40 80 120 160 200 Ambient temperature TA (°C) Output On-Resistance RON vs. Supply Voltage VIN Output on-resistance RON (mΩ) Output on-resistance RON (mΩ) Output On-Resistance RON vs. Ambient Temperature TA 140 120 100 80 60 40 20 0 −20 0 20 40 60 80 250 TA = 25°C 200 150 100 50 0 2.0 3.0 120 100 80 60 40 20 0 20 40 60 60 40 20 4.0 0.06 0.04 0.02 60 Ambient temperature TA (°C) 80 Current consumption in standby mode ( µ A) Current consumption in standby mode ( µ A) 0.08 40 4.5 5.0 5.5 6.0 6.5 Supply voltage (V) Current Consumption (Standby) IDD vs. Ambient Temperature TA 20 7.0 80 0 3.5 80 0.10 0 6.0 100 Ambient temperature TA (°C) 0.00 −20 5.0 Current Consumption IDD vs. Supply Voltage VIN Current consumption ( µ A) Current consumption ( µ A) Current Consumption IDD vs. Ambient Temperature TA 140 0 −20 4.0 Supply voltage (V) Ambient temperature TA (°C) Current Consumption (Standby) IDD vs. Supply Voltage VIN 0.10 0.08 0.06 0.04 0.02 0.00 3.5 Data Sheet S14288EJ1V0DS 4.0 4.5 5.0 5.5 6.0 6.5 Supply voltage (V) 13 µPD16876 MAJOR CHARACTERISTIC CURVES (Unless otherwise specified, TA = 25°°C, VIN = 5 V) Input Voltage VI vs. Ambient Temperature TA Input Voltage VI vs. Supply Voltage VIN 1.70 1.70 Input voltage, low VIL (V) Input voltage, high VIH (V) Input voltage, low VIL (V) Input voltage, high VIH (V) 1.80 VIH 1.60 VIL 1.50 1.40 1.30 −20 0 20 40 60 1.65 1.60 1.55 1.50 3.5 80 VIH VIL 4.0 4.5 Ambient temperature TA (°C) 1.2 1.0 0.8 0.6 0.4 0.2 0 20 40 60 80 1.0 0.8 0.6 0.4 0.2 0.0 3.5 4.0 4.5 Undervoltage lockout circuit operating voltage VUVLO (V) 14 Voltage (V) Voltage (V) Output voltage 4 2 1 0 2 3 4 0 Undervoltage Lockout Circuit Operating Voltage Characteristics 50 40 UVLO (L H) 30 20 UVLO (H L) 20 40 0.4 Time ( µ s) Time ( µ s) 0 Output voltage 3 0 00 −20 6.5 5 1 10 6.0 6 3 1 5.5 Output Fall Delay Time Characteristics 4 0 5.0 Supply voltage (V) Input voltage 2 6.5 1.2 Output Rise Delay Time Characteristics 5 6.0 1.4 Ambient temperature TA (°C) 6 5.5 Overcurrent Threshold ITH vs. Supply Voltage VIN Overcurrent detection value (A) Overcurrent detection value (A) Overcurrent Threshold ITH vs. Ambient Temperature TA 1.4 0.0 −20 5.0 Supply voltage (V) 60 80 Ambient temperature TA (°C) Data Sheet S14288EJ1V0DS 0.8 1.2 µPD16876 APPLICATION CIRCUIT 5V VBUS D+ D+ D– D– 10 kΩ GND LATCH OUT Over Current Enable CTL OUT FLG IN GND IN µ PD16876 150 µ F 1µF USB Controller The application circuits and their parameters are for references only and are not intended for use in actual designin’s. Data Sheet S14288EJ1V0DS 15 µPD16876 PACKAGE DRAWING 8-Pin Plastic SOP (5.72 mm (225)) (Unit: mm) 16 5 5.37 MAX. 6.0±0.3 4 4.4 0.15 +0.10 −0.05 1.44 1 0.05 MIN. 1.8 MAX 8 0.78 MAX 0.5±0.2 1.27 0.40 +0.10 −0.05 0.12 M Data Sheet S14288EJ1V0DS 0.8 0.10 µPD16876 RECOMMENDED SOLDERING CONDITIONS The µPD16876 should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended, contact your NEC sales representative. Surface Mount Type For the details of the recommended soldering conditions, refer to the document Semiconductor Device Mounting Technology Manual (C10535E). µPD16876G Soldering Method Recommended Condition Symbol Soldering Conditions Infrared reflow Package peak temperature: 235°C, Time: 30 sec. Max. (at 210°C or higher), Count: two times, Exposure limit: Not limitedNote IR35-00-2 VPS Package peak temperature: 215°C, Time: 40 sec. Max. (at 200°C or higher), Count: two times, Exposure limit: Not limitedNote VP15-00-2 Wave soldering Solder bath temperature: 260°C Max., Time: 10 sec. Max., Count: once, Exposure limit: not limitedNote WS60-00-1 Partial heating Pin temperature: 300°C Max., Time: 3 sec. Max., Exposure limit: not limitedNote Note After opening the dry pack, store it at 25°C or less and 65% RH or less for the allowable storage period. Cautions Do not use different soldering methods together (except for partial heating). REFERENCE Quality Grades on NEC semiconductor Devices C11531E Semiconductor Device Mounting Technology Manual C10535E NEC Semiconductor Device Reliability/Quality Control System C10983E Semiconductor Selection Guide X13769E Data Sheet S14288EJ1V0DS 17 µPD16876 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to V DD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function. 18 Data Sheet S14288EJ1V0DS µPD16876 Regional Information Some information contained in this document may vary from country to country. Before using any NEC product in your application, pIease contact the NEC office in your country to obtain a list of authorized representatives and distributors. They will verify: • Device availability • Ordering information • Product release schedule • Availability of related technical literature • Development environment specifications (for example, specifications for third-party tools and components, host computers, power plugs, AC supply voltages, and so forth) • Network requirements In addition, trademarks, registered trademarks, export restrictions, and other legal issues may also vary from country to country. NEC Electronics Inc. (U.S.) NEC Electronics (Germany) GmbH NEC Electronics Hong Kong Ltd. Santa Clara, California Tel: 408-588-6000 800-366-9782 Fax: 408-588-6130 800-729-9288 Benelux Office Eindhoven, The Netherlands Tel: 040-2445845 Fax: 040-2444580 Hong Kong Tel: 2886-9318 Fax: 2886-9022/9044 NEC Electronics Hong Kong Ltd. Velizy-Villacoublay, France Tel: 01-3067-5800 Fax: 01-3067-5899 Seoul Branch Seoul, Korea Tel: 02-528-0303 Fax: 02-528-4411 NEC Electronics (France) S.A. NEC Electronics Singapore Pte. Ltd. Milton Keynes, UK Tel: 01908-691-133 Fax: 01908-670-290 Madrid Office Madrid, Spain Tel: 091-504-2787 Fax: 091-504-2860 Novena Square, Singapore Tel: 253-8311 Fax: 250-3583 NEC Electronics Italiana s.r.l. NEC Electronics (Germany) GmbH Milano, Italy Tel: 02-66 75 41 Fax: 02-66 75 42 99 Scandinavia Office Taeby, Sweden Tel: 08-63 80 820 Fax: 08-63 80 388 NEC Electronics (France) S.A. NEC Electronics (Germany) GmbH Duesseldorf, Germany Tel: 0211-65 03 02 Fax: 0211-65 03 490 NEC Electronics (UK) Ltd. NEC Electronics Taiwan Ltd. Taipei, Taiwan Tel: 02-2719-2377 Fax: 02-2719-5951 NEC do Brasil S.A. Electron Devices Division Guarulhos-SP, Brasil Tel: 11-6462-6810 Fax: 11-6462-6829 J01.2 Data Sheet S14288EJ1V0DS 19 µPD16876 • The information in this document is current as of March, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4