UPG110B UPG110P 2-8 GHz WIDE-BAND AMPLIFIER GAIN vs. FREQUENCY AND TEMPERATURE FEATURES • WIDE-BAND: 2 to 8 GHz 20 • HIGH GAIN: 15 dB at f = 2 to 8 GHz 15 • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω • HERMETICALLY SEALED PACKAGE ASSURES HIGH RELIABILITY Gain, GP (dB) • MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GHz T = -25˚C T = +25˚C 10 T = +75˚C 5 0 -5 -10 DESCRIPTION 0 2 4 6 8 10 Frequency, f (GHz) The UPG110B is a GaAs monolithic integrated circuit designed for use as a wide-band amplifier from 2 GHz to 8 GHz. The device is most suitable for the gain stage of microwave communication systems where high gain characteristics are required. The UPG110 is available in a 4 pin flat package and in chip form. ELECTRICAL CHARACTERISTICS1 (TA = 25 ± 3°C, ZS = ZL = 50 Ω, VDD = +8 V, f = 2.0 to 8.0 GHz) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS UPG110B/P FA/CHIP UNITS MIN TYP MAX IDD Supply Current mA 65 135 180 12 15 GP Power Gain dB ∆GL Gain Flatness dB RLIN Input Return Loss dB 6 10 Output Return Loss dB 7 10 ISOL Isolation dB 30 40 P1dB Output Power at 1 dB Compression Point dBm 10 14 SSB Third Order Intercept Point dBm RLOUT IP3 ±1.5 25 Note: 1. When handling the device, a ground strap should be used to prevent electric static discharge (ESD) that can damage the IC. California Eastern Laboratories UPG110B, UPG110P ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS EQUIVALENT CIRCUIT VDD Drain Voltage V +10 VIN Input Voltage V -5 to +0.6 PIN Input Power dBm +10 PT Total Power Dissipation W 1.5 RL1 TC Case Temperature °C -65 to +125 LL1 TSTG °C Storage Temperature VDD R1 -65 to +175 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. L1 RG1 OUT C3 C2 C1 CRF LL3 L3 L2 RG3 RG2 C4 RS1 CS LG1 R2 LL2 RF1 LIN IN RF2 RL2 TYPICAL PERFORMANCE CURVES (TA = 25°C) OUTPUT POWER vs. INPUT POWER AND FREQUENCY 20 0 Output Power, POUT (dBm) Input Return Loss, RLIN (dB) Output Retun Loss, RLOUT (dB) INPUT/OUTPUT RETURN LOSS vs. FREQUENCY RLIN -10 -20 RLOUT -30 0 1 2 3 4 5 6 7 8 9 10 0 f = 2 GHz f = 5 GHz f = 8 GHz 10 -20 -10 0 10 Input Power, PIN (dBm) Frequency, f (GHz) OUTPUT POWER vs. INPUT POWER AND GAIN CONTROL ISOLATION vs. FREQUENCY 0 20 Output Power, POUT (dBm) Isolation, ISOL (dB) -20 -40 -60 -80 0 1 2 3 4 5 6 7 Frequency, f (GHz) 8 9 10 10 0 dB 0 -3.1 dB VG = 0 V VG = -0.3 V VG = -0.5 V VG = -0.7 V VG = -0.9 V -5.3 dB -7.9 dB -10 -11.7 dB -10 0 IDD = 130 mA IDD = 110 mA IDD = 99 mA IDD = 91 mA IDD = 83 mA 10 Input Power, PIN (dBm) Note: Gain control can be achieved by applying a negative voltage (VG) to the input pin. UPG110B, UPG110P TYPICAL SCATTERING PARAMETERS UPG110B VDD = 8V, IDD = 135 mA FREQUENCY S11 GHZ 0.05 0.10 0.20 0.40 0.60 0.80 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 MAG 0.375 0.249 0.146 0.103 0.074 0.047 0.013 0.131 0.230 0.310 0.361 0.415 0.437 0.433 0.385 0.321 0.298 0.382 0.475 0.548 0.554 0.460 0.585 0.771 0.769 S21 ANG -78 -101 -134 -164 -178 171 125 -68 -91 -113 -132 -150 -173 165 129 87 40 -4 -36 -57 -73 -76 -57 -71 -82 MAG 1.075 2.899 4.321 5.421 5.860 6.068 5.176 4.863 4.579 4.179 3.879 3.749 3.845 3.946 4.104 4.233 4.354 3.848 3.553 3.334 3.290 3.530 3.178 1.665 0.871 S12 ANG 14 -50 -123 -177 151 119 92 53 5 -40 -81 -120 -159 158 114 67 14 -35 -80 -125 -173 132 70 9 -28 MAG 0.001 0.001 0.001 0.002 0.003 0.006 0.008 0.006 0.006 0.007 0.008 0.009 0.010 0.012 0.014 0.016 0.015 0.015 0.015 0.017 0.022 0.032 0.047 0.057 0.086 S22 ANG -171 143 133 97 88 64 38 0 -16 -31 -45 -60 -74 -89 -110 -134 -164 -171 177 164 153 141 116 83 53 MAG 0.967 0.862 0.648 0.384 0.224 0.182 0.338 0.103 0.074 0.161 0.189 0.180 0.177 0.207 0.282 0.364 0.357 0.294 0.251 0.222 0.216 0.175 0.269 0.512 0.558 ANG -26 -51 -85 -132 -157 -126 -152 127 -96 -120 -137 -144 -142 -136 -141 -160 167 143 104 51 -1 -21 9 -23 -50 K S21 25.7 41.6 65.8 38.9 26.7 13.3 10.7 16.7 17.2 15.1 13.6 11.9 10.2 8.2 6.7 5.7 6.0 6.7 6.7 5.8 4.5 3.4 2.2 2.0 2.3 dB 0.6 9.2 12.7 14.7 15.4 15.7 14.3 13.7 13.2 12.4 11.8 11.5 11.7 11.9 12.3 12.5 12.8 11.7 11.0 10.5 10.3 11.0 10.0 4.4 -1.2 OUTLINE DIMENSIONS (Units in mm) UPG110P (CHIP) UPG110B PACKAGE OUTLINE FA VDD 39 pF LEAD 1 & 3 0.6 ± 0.06 LESS THAN 300 µm 200 to 500 µm 50 to 100 µm 4.5 MAX GND 5 VDD 3 1.1 mm 2 4.6 MAX 500 to 1000 µm 200 to 500 µm IN 4 4.1 MIN +0.2 0.7 -0.1 OUT 4.1 MIN 1 LEAD 2 & 4 0.4 ± 0.06 1.48 MAX 0.1 ± 0.06 1. VDD 2. In 3. Non Connection 4. Out Case: GND EXCLUSIVE NORTH AMERICAN AGENT FOR 1 GND 2 GND 3 GND 1.3 mm 4 GND LESS THAN 200 µm Bonding Pad Size: 200 µm x 200 µm RECOMMENDED CHIP ASSEMBLY CONDITIONS DIE ATTACHMENT Atmosphere: N2 gas Temperature: 320± 5°C AuSn Preform: UPG100P, 101P, 103P 0.5 x 0.5 x 0.05 (mm), 1 pc UPG102P 1.2 x 1.2 x 0.05 (mm), 1 pc *The hard solder such as AuSi or AuGe which has higher melting point than AuSn should not be used. Base Material: CuW, Cu, KV (Other material should not be used) Epoxy Die Attach is not recommended. BONDING Machine: TCB (USB is not recommended) Wire: 30 µm diameter Au wire Temperature: 260 ± 10°C Strength: 44 ± 5g Atmosphere: N2 gas RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -10/97 DATA SUBJECT TO CHANGE WITHOUT NOTICE