NTE2077 Integrated Circuit 6−Stage Darlington Transistor Array w/Clamp Diode Description: The NTE2077is a six−circuit Darlington transistor array with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high−current driving with extremely low input−current supply. Features: • • • • • • High breakdown voltage (BVCEO ≥ 40V) High−current driving (IC(max) = 150mA) With clamping diodes Driving available with PMOS IC output of 8V to 18V Wide input voltage range (VI = −40V to +40V) Wide operating temperature range (TA = −20° to +75°C) Absolute Maximum Ratings: (TA = −20° to +75°C unless otherwise specified) Collector−Emitter Voltage (Output, H), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5V to +40V Collector Current, IC (Current per Circuit Output, L) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Input Voltage, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40V to 40V Clamp Diode Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Clamp Diode Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Power Dissipation (TA = +25°C, when mounted on board), PD . . . . . . . . . . . . . . . . . . . . . . . . . . 1.47W Operating Ambient Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −20° to +75°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +125°C Recommended Operational Conditions: (TA = −20° to +75°C, unless otherwise specified) Parameter Symbol Output Voltage VO Collector Current per Channel IC Test Conditions Percent Duty Cycle Less than 50% Min Typ Max Unit 0 − 40 V 0 − 150 mA “H” Input Voltage VIH 7 − 35 V “L” Input Voltage VIL 0 − 1 V Electrical Characteristics: (TA = −20° to +75°C, unless otherwise specified) Parameter Symbol Test Conditions Min Typ 40 − − V VI = 7V, IC = 150mA − 1.1 1.7 V VI = 7V, IC = 100mA − 1.0 1.4 V VI = 18V − 0.9 1.8 mA VI = 35V − 1.9 5.0 mA Collector−Emitter Breakdown Voltage V(BR)CEO ICER = 100μA Collector−Emitter Saturation Voltage VCE(sat) ( ) Input Current Il Max Unit Input Reverse Current IIR VI = −35V − − −20 μA Clamping Diode Forward Voltage VF IF = −150mA − 1.15 1.6 V Clamping Diode Reverse Current IR VR = 40V − − 100 μA 800 2500 − DC Amplification Factor hFE VCE = 4V, IC = 150mA, TA = +25°C Switching Characteristics: (TA = +25° unless otherwise specified) Parameter Symbol Turn−On Time ton Turn−Off Time toff Test Conditions CL = 15pF (Note 1) Min Typ Max Unit − 35 − ns − 300 − ns Note 1. Pulse generator (PG) characteristics: PRR = 1kHz, tw = 10μs, tr = 6ns, ZO = 50Ω, VP = 7Vp−p Pin Connection Diagram Input 1 1 14 Output 1 Input 2 2 13 Output 2 Input 3 3 12 Output 3 Input 4 4 11 Output 4 Input 5 5 10 Output 5 Input 6 6 9 Output 6 GND 7 8 Common 14 8 1 7 .785 (19.95) Max .300 (7.62) .200 (5.08) Max .100 (2.45) .600 (15.24) .099 (2.5) Min