MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> ARY M63820FP/KP MIN RELI on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION The M63820FP/KP 8-channel sinkdriver, consists of 16 NPN transistors connected to from eight high current gain driver pairs. FEATURES ● High breakdown voltage (BV CEO ≥ 50V) ● High-current driving (IC(max) = 500mA) ● With clamping diodes ● 3V micro computer series compatible input ● Wide operating temperature range (Ta = –40 to +85°C) APPLICATION Output for 3 voltage microcomputer series and interface with high voltage system. Relay and small printer driver, LED, or incandescent display digit driver. PIN CONFIGURATION NC 1 20 NC IN1 2 19 O1 IN2 3 18 O2 IN3 4 17 O3 IN4 5 16 O4 IN5 6 15 O5 IN6 7 14 O6 IN7 8 13 O7 IN8 9 12 O8 GND 10 11 COM INPUT OUTPUT 20P2N-A(FP) Package type 20P2E-A(KP) COMMON NC : No connection CIRCUIT DIAGRAM FUNCTION The M63820FP/KP is transistor-array of high active level eight units type which can do direct drive of 3 voltage microcomputer series. A resistor of 1.05kΩ is connected between the input pin. A clamp diode for inductive load transient suppression is connected for the output pin (collector) and COM pin (pin11). All emitters of the output transistor are connected to GND (pin10). The outputs are capable of driving 500mA and are rated for operation with output voltage up to 50V. COM OUTPUT 1.05K INPUT 7.2K 3K GND The eight circuits share the COM and GND The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI IF VR Pd Topr Tstg (Unless otherwise noted, Ta = –40 ~ +85°C) Parameter Collector-emitter voltage Collector current Conditions Output, H Current per circuit output, L Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25°C, when mounted on board Ratings –0.5 ~ +50 500 –0.5 ~ +10 500 50 1.10(GP)/0.68(KP) –40 ~ +85 –55 ~ +125 Unit V mA V mA V W °C °C Sep. 2001 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> ARY MIN RELI M63820FP/KP on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS Symbol VO (Unless otherwise noted, Ta = –40 ~ +85°C) Limits Parameter typ — max 50 Duty Cycle FP : no more than 4% KP : no more than 2% 0 — 400 Duty Cycle FP : no more than 15% KP : no more than 6% 0 — 200 2.7 — — 10 V 0.6 V Output voltage Collector current (Current per 1 circuit when 8 circuits are coming on simultaneously) IC VIH VIL 0 ELECTRICAL CHARACTERISTICS Symbol V (BR) CEO VCE(sat) II VF IR hFE min 50 — — — — — — 1000 typ — 1.2 1.0 0.9 1.5 1.4 — 2500 Unit max — 1.6 1.3 1.1 2.4 2.0 100 — V V mA V µA — (Unless otherwise noted, Ta = 25°C) Parameter Limits Test conditions Turn-on time Turn-off time toff Limits Test conditions Collector-emitter breakdown voltage ICEO = 100µA II = 500µA, IC = 350mA Collector-emitter saturation voltage II = 350µA, IC = 200mA II = 250µA, IC = 100mA Input current VI = 3V Clamping diode forward volltage IF = 350mA Clamping diode reverse current VR = 50V DC amplification factor VCE = 2V, IC = 350mA Symbol ton (Unless otherwise noted, Ta = 25°C) Parameter SWITCHING CHARACTERISTICS V mA IC ≤ 400mA “H” input voltage “L” input voltage Unit min 0 CL = 15pF (note 1) min — typ 15 max — — 350 — Unit ns ns TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT VO 50% Measured device 50% INPUT RL OPEN OUTPUT PG OUTPUT 50Ω CL 50% ton 50% toff (1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω VI = 0 ~ 3V (2)Input-output conditions : RL = 25Ω, Vo = 10V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Sep. 2001