APTDF100H601G Fast Diode Full Bridge Power Module 3 4 Application CR1 1 • • • • 2 Features CR3 5 6 CR2 7 VRRM = 600V IC = 100A* @ Tc = 80°C CR4 8 Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers • • • • • • • 9 10 Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance High level of integration Benefits • • • • • • • Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant All multiple inputs and outputs must be shorted together 3/4 ; 5/6 ; 7/8 ; 1/2 ; 9/10 Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage IF(AV) Maximum Average Forward Current IFSM Non-Repetitive Forward Surge Current Duty cycle = 50% 8.3ms Max ratings Unit 600 V TC = 25°C 135 * TC = 80°C TC = 45°C 100 * A 500 * Specification of diode device but output current must be limited to 75A to not exceed a delta of temperature greater than 30°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APTDF100H601G – Rev 0 Symbol VR VRRM August, 2007 Absolute maximum ratings APTDF100H601G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Test Conditions IF = 100A IF = 200A IF = 100A Tj = 125°C Tj = 25°C VR = 600V Tj = 125°C Min Typ 1.6 2.0 1.3 Max 2.0 V 250 500 VR = 200V Unit 190 µA pF Dynamic Characteristics Symbol Characteristic trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Test Conditions IF = 100A VR = 400V di/dt = 200A/µs IF = 100A VR = 400V di/dt=1000A/µs Min Typ Tj = 25°C 160 Tj = 125°C 220 Tj = 25°C Tj = 125°C 290 1530 Tj = 25°C 5 Tj = 125°C 13 Tj = 125°C Max Unit ns nC A 100 ns 2890 nC 44 A Thermal and package characteristics Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 2.5 To heatsink M4 Max 0.55 175 125 100 4.7 80 Unit °C/W V °C N.m g August, 2007 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ www.microsemi.com 2-4 APTDF100H601G – Rev 0 Symbol RthJC VISOL TJ TSTG TC Torque Wt APTDF100H601G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.9 0.5 0.7 0.4 0.5 0.3 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 250 200 TJ=125°C 150 TJ=25°C 100 50 0 0.0 0.5 1.0 1.5 2.0 250 100 A 200 150 50 A 100 50 2.5 0 200 QRR vs. Current Rate Charge 200 A TJ=125°C VR=400V 3 100 A 50 A 2 1 0 0 200 400 600 800 1000 1200 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) VF, Anode to Cathode Voltage (V) 4 400 600 800 -diF/dt (A/µs) 1000 1200 IRRM vs. Current Rate of Charge 60 200 A TJ=125°C VR=400V 50 100 A 40 50 A 30 20 10 0 0 200 400 -diF/dt (A/µs) 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage Max. Average Forward Current vs. Case Temp. 150 1400 1200 Duty Cycle = 0.5 TJ=175°C 125 800 600 100 August, 2007 1000 IF(AV) (A) C, Capacitance (pF) TJ=125°C VR=400V 200 A 75 50 400 25 200 0 0 1 10 100 1000 VR, Reverse Voltage (V) 25 50 75 100 125 150 175 Case Temperature (°C) www.microsemi.com 3-4 APTDF100H601G – Rev 0 IF, Forward Current (A) Trr vs. Current Rate of Charge 300 300 APTDF100H601G SP1 Package outline (dimensions in mm) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APTDF100H601G – Rev 0 August, 2007 See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com