MICROSEMI APTDF30H601G

APTDF30H601G
Fast Diode Full Bridge
Power Module
3
VRRM = 600V
IC = 30A @ Tc = 90°C
4
Application
5
1
•
•
•
•
6
2
Features
CR1
CR3
CR2
7
CR4
8
Uninterruptible Power Supply (UPS)
Induction heating
Welding equipment
High speed rectifiers
•
•
•
•
•
•
•
9 10
Ultra fast recovery times
Soft recovery characteristics
High blocking voltage
High current
Low leakage current
Very low stray inductance
High level of integration
Benefits
•
•
•
•
•
•
•
Outstanding performance at high frequency
operation
Low losses
Low noise switching
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
All multiple inputs and outputs must be shorted together
3/4 ; 5/6 ; 7/8 ; 1/2 ; 9/10
Symbol
VR
VRRM
Parameter
Maximum DC reverse Voltage
Maximum Peak Repetitive Reverse Voltage
IF(AV)
Maximum Average Forward
Current
IFSM
Non-Repetitive Forward Surge Current
Duty cycle = 50%
8.3ms
Max ratings
Unit
600
V
TC = 25°C
42
TC = 90°C
TJ = 45°C
30
A
250
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-4
APTDF30H601G – Rev 1 September, 2008
Absolute maximum ratings
APTDF30H601G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
VF
Diode Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance
Test Conditions
IF = 30A
IF = 60A
Tj = 125°C
IF = 30A
Tj = 25°C
VR = 600V
Tj = 125°C
Min
Typ
1.8
2.2
1.5
Max
2.2
V
250
500
VR = 200V
Unit
36
µA
pF
Dynamic Characteristics
Symbol Characteristic
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Test Conditions
IF = 30A
VR = 400V
di/dt = 200A/µs
IF = 30A
VR = 400V
di/dt=1000A/µs
Min
Typ
Tj = 25°C
25
Tj = 125°C
160
Tj = 25°C
Tj = 125°C
35
480
Tj = 25°C
3
Tj = 125°C
6
Tj = 125°C
Max
Unit
ns
nC
A
85
ns
920
nC
20
A
Thermal and package characteristics
Characteristic
Junction to Case Thermal Resistance
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
-40
-40
-40
2.5
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
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M4
Typ
Max
1.2
175
125
100
4.7
80
Unit
°C/W
V
°C
N.m
g
2-4
APTDF30H601G – Rev 1 September, 2008
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
APTDF30H601G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.4
1.2
0.9
1
0.7
0.8
0.5
0.6
0.3
0.4
0.1
0.05
0.2
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
Trr vs. Current Rate of Charge
175
trr, Reverse Recovery Time (ns)
100
80
TJ=125°C
60
40
20
TJ=25°C
0
0.0
0.5
1.0
1.5
2.0
2.5
TJ=125°C
VR=400V
150
125
60 A
100
30 A
75
15 A
50
3.0
0
200
60 A
1.0
30 A
15 A
0.5
0.0
0
200
400
600
800
600
1000 1200
1000 1200
30
TJ=125°C
VR=400V
25
60 A
20
15
30 A
15 A
10
5
0
0
200
-diF/dt (A/µs)
400
600
800
1000 1200
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
Max. Average Forward Current vs. Case Temp.
50
200
Duty Cycle = 0.5
TJ=175°C
175
40
150
IF(AV) (A)
C, Capacitance (pF)
800
IRRM vs. Current Rate of Charge
IRRM, Reverse Recovery Current (A)
QRR, Reverse Recovery Charge (µC)
QRR vs. Current Rate Charge
1.5
TJ=125°C
VR=400V
400
-diF/dt (A/µs)
VF, Anode to Cathode Voltage (V)
125
100
75
50
30
20
10
25
0
0
1
10
100
1000
VR, Reverse Voltage (V)
25
50
75
100
125
150
175
Case Temperature (°C)
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3-4
APTDF30H601G – Rev 1 September, 2008
IF, Forward Current (A)
120
APTDF30H601G
SP1 Package outline (dimensions in mm)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
4-4
APTDF30H601G – Rev 1 September, 2008
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com