APTDF100H170G Diode Full Bridge Power Module VRRM = 1700V IC = 100A @ Tc = 55°C Application + AC1 • • • • AC2 Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features • • • • • • - • Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Benefits - Absolute maximum ratings Symbol VR VRRM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage IF(A V) Maximum Average Forward Current IF(RMS) IFSM RMS Forward Current Non-Repetitive Forward Surge Current Duty cycle = 50% Max ratings Unit 1700 V Tc = 25°C 120 Tc = 55°C 100 125 300 Tj = 25°C A June, 2006 + • • • • • • AC1 Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-3 APTDF100H170G – Rev 1 • AC2 APTDF100H170G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions VF Diode Forward Voltage IF = 100A IRM Maximum Reverse Leakage Current VR = 1700V Dynamic Characteristics Symbol Characteristic trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Min Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Test Conditions IF = 100A VR = 900V di/dt = 1000A/µs Min 572 Tj = 125°C 704 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 20 35 70 100 Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 3500 -40 -40 -40 2.5 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink Typ Tj = 25°C Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Typ 2.2 2.1 M5 Typ Max 2.5 Unit V 250 500 µA Max Unit ns µC A Max 0.35 150 125 100 4.7 160 Unit °C/W V °C N.m g ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : www.microsemi.com 2-3 APTDF100H170G – Rev 1 June, 2006 SP4 Package outline (dimensions in mm) APTDF100H170G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.4 0.35 0.9 0.3 0.7 0.25 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage 800 TJ=25°C 200 150 TJ=125°C 100 50 TJ=25°C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t rr , Reverse Recovery Time (ns) I F, Forward Current (A) 10 Trr vs. Current Rate of Charge 250 TJ=125°C V R=900V 700 600 500 200 A 400 100 A 300 50 A 200 0 1000 2000 3000 4000 5000 6000 V F, Anode to Cathode Voltage (V) -diF/dt (A/µs) IRRM vs. Current Rate of Charge QRR vs. Current Rate Charge 80 TJ=125°C VR =900V 70 200 A 100 A 60 50 50 A 40 30 20 0 1000 2000 3000 4000 5000 6000 I RRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) 1 400 TJ=125°C VR =900V 350 100 A 200 A 300 50 A 250 200 150 100 50 0 1000 2000 3000 4000 5000 6000 -di F/dt (A/µs) -di F/dt (A/µs) Max. Average Forward Current vs. Case Temp. 150 Duty Cycle = 0.5 TJ=150°C 100 75 50 June, 2006 I F(AV) (A) 125 25 0 0 25 50 75 100 125 150 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 3-3 APTDF100H170G – Rev 1 Case Temperature (ºC)