TI SNJ54ABT16245WD

OBSOLETE
54ABT16245
www.ti.com
SNOS038C – AUGUST 1998 – REVISED APRIL 2013
54ABT16245 16-Bit Transceiver with TRI-STATE Outputs
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FEATURES
DESCRIPTION
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The 'ABT16245 contains sixteen non-inverting
bidirectional buffers with TRI-STATE outputs and is
intended for bus oriented applications. The device is
byte controlled. Each byte has separate control inputs
which can be shorted together for full 16-bit
operation. The T/R inputs determine the direction of
data flow through the device. The OE inputs disable
both the A and B ports by placing them in a high
impedance state.
1
2
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Bidirectional Non-Inverting Buffers
Separate Control Logic for Each Byte
16-bit Version of the 'ABT245
A and B Output Sink Capability of 48 mA,
Source Capability of 24 mA
Ensured Latchup Protection
High Impedance Glitch Free Bus Loading
During Entire Power Up and Power Down
Cycle
Non-Destructive Hot Insertion Capability
Standard Microcircuit Drawing (SMD) 59629317501
Logic Symbol
PIN DESCRIPTIONS
Pin Names
Description
OEn
Output Enable Input (Active Low)
T/Rn
Transmit/Receive Input
A0–A15
Side A Inputs/Outputs
B0–B15
Side B Inputs/Outputs
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 1998–2013, Texas Instruments Incorporated
OBSOLETE
54ABT16245
SNOS038C – AUGUST 1998 – REVISED APRIL 2013
www.ti.com
Connection Diagram
Pin Assignment for CFP
See Package Number WD
FUNCTIONAL DESCRIPTION
The 'ABT16245 contains sixteen non-inverting bidirectional buffers with TRI-STATE outputs. The device is byte
controlled with each byte functioning identically, but independent of the other. The control pins can be shorted
together to obtain full 16-bit operation.
TRUTH TABLE (1)
Inputs
(1)
Outputs
OE1
T/R1
L
L
Bus B0–B7 Data to Bus A0–A 7
L
H
Bus A0–A7 Data to Bus B0–B 7
H
X
HIGH-Z State on A0–A7, B0–B 7
H = High Voltage Level
L = Low Voltage Level
X = Immaterial
Z = High Impedance
Inputs
OE2
2
Outputs
T/R2
L
L
Bus B8–B15 Data to Bus A8–A 15
L
H
Bus A8–A15 Data to Bus B8–B 15
H
X
HIGH-Z State on A8–A15, B8–B 15
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Figure 1. Logic Diagram
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
(1) (2)
−65°C to +150°C
Storage Temperature
−55°C to +125°C
Ambient Temperature under Bias
Junction Temperature under Bias
−55°C to +175°C
Ceramic
−0.5V to +7.0V
VCC Pin Potential to ground Pin
Input Voltage
(3)
−0.5V to +7.0V
Input Current
(3)
−30 mA to +5.0 mA
Voltage Applied to Any Output
−0.5V to 5.5V
in the Disabled or Power-off State
−0.5V to VCC
in the HIGH State
Current Applied to Output
in LOW State (Max)
twice the rated IOL (mA)
−500 mA
DC Latchup Source Current
Over Voltage Latchup (I/O)
(1)
10V
Absolute maximum ratings are values beyond which the device may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
Either voltage limit or current limit is sufficient to protect inputs.
(2)
(3)
RECOMMENDED OPERATING CONDITIONS
Free Air Ambient Temperature
Military
−55°C to +125°C
Supply Voltage
Military
+4.5V to +5.5V
Minimum Input Edge Rate
(ΔV/Δt)
Data Input
50 mV/ns
Enable Input
20 mV/ns
DC Electrical Characteristics
Symbol
Parameter
ABT16245
Min
Typ
Units
VCC
Conditions
Max
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
0.8
V
VCD
Input Clamp Diode Voltage
−1.2
V
Min
IIN = −18 mA (OEn, T/Rn)
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
IIH
Input HIGH Current
IBVI
Input HIGH Current
Breakdown Test
IBVIT
2.0
V
Recognized HIGH Signal
Recognized LOW Signal
54ABT
2.5
V
Min
IOH = −3 mA (An, Bn)
54ABT
2.0
V
Min
IOH = −24 mA (An, Bn)
0.55
V
Min
IOL = 48 mA (An, Bn)
5
μA
Max
VIN = 2.7V (OEn, T/Rn)
54ABT
5
VIN = VCC (OEn, T/Rn)
7
μA
Max
VIN = 7.0V (OEn, T/Rn)
Input HIGH Current
Breakdown Test (I/O)
100
μA
Max
VIN = 5.5V (An, Bn)
IIL
Input LOW Current
−5
μA
Max
VIN = 0.5V (OEn, T/Rn)
VID
Input Leakage Test
IIH + I
Output Leakage Current
Output Leakage Current
−5
4.75
4
IID = 1.9 μA (OEn, T/Rn)All Other Pins
Grounded
V
0.0
50
μA
0−
5.5V
VOUT = 2.7V (An, Bn); OE = 2.0V
−50
μA
0−
5.5V
VOUT = 0.5V (An, Bn); OE = 2.0V
OZL
(1)
(1)
VIN = 0.0V (OEn, T/Rn)
OZH
IIL + I
(1)
Ensured, but not tested.
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SNOS038C – AUGUST 1998 – REVISED APRIL 2013
DC Electrical Characteristics (continued)
Symbol
Parameter
ABT16245
Min
Typ
Units
VCC
Conditions
−275
mA
Max
VOUT = 0.0V (An, Bn)
50
μA
Max
VOUT = V CC (An, Bn)
100
μA
0.0
VOUT = 5.50V (An, Bn);
All Others GND
Max
−100
IOS
Output Short-Circuit Current
ICEX
Output High Leakage Current
IZZ
Bus Drainage Test
ICCH
Power Supply Current
100
μA
Max
All Outputs HIGH
ICCL
Power Supply Current
60
mA
Max
All Outputs LOW
ICCZ
Power Supply Current
100
μA
Max
OEn = VCC, T/Rn = GND or VCC
All others at VCC or GND
ICCT
Additional ICC/Input
Outputs Enabled
2.5
mA
Max
Outputs TRISTATE
2.5
mA
Outputs TRISTATE
50
μA
VI = V CC − 2.1V
OEn, T/ Rn VI = VCC − 2.1V
Data Input VI = VCC − 2.1V
All others at VCC or GND
No Load
0.1
mA/M
Hz
Max
Outputs Open
OEn = GND, T/Rn = GND or VCC
One Bit Toggling, 50% Duty Cycle
ICCD
Dynamic ICC
AC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
54ABT
Units
Fig.
No.
ns
See Figure 23
ns
See Figure 22
ns
See Figure 22
TA =
−55°C to +125°C
VCC = 4.5V–5.5V
CL = 50 pF
Min
Max
0.5
4.5
tPHL
Propagation
Delay Data
to Outputs
0.5
5.2
tPZH
Output Enable
0.8
6.4
tPZL
Time
0.9
6.9
tPHZ
Output Disable
1.3
6.9
tPLZ
Time
1.0
6.9
tPLH
CAPACITANCE
Typ
Units
CIN
Symbol
Input Capacitance
5
pF
VCC = 0.0V (OEn, T/Rn)
CI/O (1)
Output Capacitance
11
pF
VCC = 5.0V (An, Bn)
(1)
Parameter
Conditions, TA = 25°C
CI/O is measured at frequency f = 1 MHz, per MIL-STD-883B, Method 3012.
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TYPICAL CHARACTERISTICS
6
tPLH vs Temperature (TA)
CL = 50 pF, 1 Output Switching
tPHL vs Temperature (TA)
CL = 50 pF, 1 Output Switching
Figure 2.
Figure 3.
tPLH vs Load Capacitance
1 Output Switching, TA = 25°C
tPHL vs Load Capacitance
1 Output Switching, TA = 25°C
Figure 4.
Figure 5.
tPLH vs Load Capacitance
16 Outputs Switching, TA = 25°C
tPHL vs Load Capacitance
16 Outputs Switching, TA = 25°C
Figure 6.
Figure 7.
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TYPICAL CHARACTERISTICS (continued)
tPZL vs Temperature (TA)
CL = 50 pF, 1 Output Switching
tPLZ vs Temperature (TA)
CL = 50 pF, 1 Output Switching
Figure 8.
Figure 9.
tPZH vs Temperature (TA)
CL = 50 pF, 1 Output Switching
tPHZ vs Temperature (TA)
CL = 50 pF, 1 Output Switching
Figure 10.
Figure 11.
tPZH vs Temperature (TA)
CL = 50 pF, 16 Outputs Switching
tPHZ vs Temperature (TA)
CL = 50 pF, 16 Outputs Switching
Figure 12.
Figure 13.
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TYPICAL CHARACTERISTICS (continued)
8
tPZL vs Temperature (TA)
CL = 50 pF, 16 Outputs Switching
tPLZ vs Temperature (TA)
CL = 50 pF, 16 Outputs Switching
Figure 14.
Figure 15.
tPZL vs Load Capacitance
16 Outputs Switching TA = 25°C
tPZH vs Load Capacitance
16 Outputs Switching TA = 25°C
Figure 16.
Figure 17.
tPLH vs Number Output Switching
VCC = 5.0V, TA = 25°C, CL = 50 pF
tPHL vs Number Output Switching
VCC = 5.0V, TA = 25°C, CL = 50 pF
Figure 18.
Figure 19.
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SNOS038C – AUGUST 1998 – REVISED APRIL 2013
TYPICAL CHARACTERISTICS (continued)
ICC vs Frequency
Average, TA = 25°C, VCC = 5.5V
All Outputs Unloaded/Unterminated;
16 Outputs Switching In-Phase at 50% Duty Cycle
Figure 20.
AC LOADING
*Includes jig and probe capacitance
Standard AC Test Load
Figure 21. Input Pulse Requirements
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Table 1. Test Input Signal Requirements
Amplitude
3.0V
Rep. Rate
tw
tr
tf
1 MHz
500 ns
2.5 ns
2.5 ns
Figure 22. TRI-STATE Output HIGH
and LOW Enable and Disable Times
Figure 23. Propagation Delay Waveforms for
Inverting and Non-Inverting Functions
10
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SNOS038C – AUGUST 1998 – REVISED APRIL 2013
REVISION HISTORY
Changes from Revision B (April 2013) to Revision C
•
Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 10
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