CD4002M/CD4002C Dual 4-Input NOR Gate CD4012M/CD4012C Dual 4-Input NAND Gate General Description Features These NOR and NAND gates are monolithic complementary MOS (CMOS) integrated circuits. The N- and P-channel enhancement mode transistors provide a symmetrical circuit with output swings essentially equal to the supply voltage. This results in high noise immunity over a wide supply voltage range. No DC power other than that caused by leakage current is consumed during static conditions. All inputs are protected against static discharge and latching conditions. Y Y Y Wide supply voltage range Low power High noise immunity 3.0V to 15V 10 nW (typ.) 0.45 VDD (typ.) Applications Y Y Y Y Automotive Data terminals Instrumentation Medical Electronics Y Y Y Y Alarm system Industrial controls Remote metering Computers Connection Diagrams CD4012 Dual-In-Line Package CD4002 Dual-In-Line Package TL/F/5940 – 1 Top View TL/F/5940 – 2 Top View Order Number CD4002 or CD4012 C1995 National Semiconductor Corporation TL/F/5940 RRD-B30M105/Printed in U. S. A. CD4002M/CD4002C Dual 4-Input NOR Gate CD4012M/CD4012C Dual 4-Input NAND Gate March 1988 Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Voltage at Any Pin Operating Temperature Range CD4002M, CD4012M CD4002C, CD4012C Storage Temperature Range (TS) Power Dissipation (PD) Dual-In-Line Small Outline Operating Range (VDD) VSS b0.3V to VDD a 0.3V b 55§ C to a 125§ C b 40§ C to a 85§ C b 65§ C to a 150§ C 700 mW 500 mW VSS a 3.0V to VSS a 15V Lead Temperature (TL) (Soldering, 10 seconds) 260§ C DC Electrical Characteristics CD4002M, CD4012M Limits Symbol Parameter b 55§ C Conditions Min Max a 25§ C Min Typ a 125§ C Max Min Units Max IDD Quiescent Device Current VDD e 5.0V VDD e 10V 0.05 0.1 0.001 0.05 0.001 0.1 3.0 6 mA mA PD Quiescent Device VDD e 5.0V Dissipation/Package VDD e 10V 0.25 1.0 0.005 0.25 0.01 1.0 15 60 mW mW VOL Output Voltage Low Level 0.05 0.05 0.05 0.05 V V VOH Output Voltage High Level VDD e 5.0V, VI e VDD, IO e 0A VDD e 10V, VI e VDD, IO e 0A VDD e 5.0V, VI e VSS, IO e 0A VDD e 10V, VI e VSS, IO e 0A 0 0 4.95 9.95 4.95 9.95 5.0 10 4.95 9.95 V V VNL Noise Immunity (All Inputs) VDD e 5.0V, VO e 3.6V, IO e 0A VDD e 10V, VO e 7.2V, IO e 0A 1.5 3.0 1.5 3.0 2.25 4.5 1.4 2.9 V V VNH Noise Immunity (All Inputs) VDD e 5.0V, VO e 0.95V, IO e 0A VDD e 10V, VO e 2.9V, IO e 0A 1.4 2.9 1.5 3.0 2.25 4.5 1.5 3.0 V V IDN Output Drive Current N-Channel (4002) (Note 2) VDD e 5.0V, VO e 0.4V, VI e VDD VDD e 10V, VO e 0.5V, VI e VDD 0.5 1.1 0.40 0.9 1.0 2.5 0.28 0.65 mA mA IDP Output Drive Current P-Channel (4002) (Note 2) VDD e 5.0V, VO e 2.5V, VI e VSS VDD e 10V, VO e 9.5V, VI e VSS b 0.62 b 0.62 b 0.5 b 0.5 b 2.0 b 1.0 b 0.35 b 0.35 mA mA IDN Output Drive Current N-Channel (4012) (Note 2) VDD e 5.0V, VO e 0.4V, VI e VDD VDD e 10V, VO e 0.5V, VI e VDD 0.31 0.63 0.25 0.5 0.5 0.6 0.175 0.35 mA mA IDP Output Drive Current P-Channel (4012) (Note 2) VDD e 5.0V, VO e 2.5V, VI e VSS VDD e 10V, VO e 9.5V, VI e VSS b 0.31 b 0.75 b 0.25 b 0.6 b 0.5 b 1.2 b 0.175 b 0.4 mA mA II Input Current 10 0.05 0.05 pA Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’ they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device operation. Note 2: IDN and IDP are tested one output at a time. 2 DC Electrical Characteristics CD4002C, CD4012C Limits Symbol Parameter b 55§ C Conditions Min Max a 25§ C Min a 85§ C Typ Max Min Units Max IDD Quiescent Device Current VDD e 5.0V VDD e 10V 0.5 5.0 0.005 0.005 0.5 5.0 15 30 mA mA PD Quiescent Device VDD e 5.0V Dissipation/Package VDD e 10V 2.5 50 0.025 0.05 2.5 50 75 300 mW mW VOL Output Voltage Low Level 0.05 0.05 0 0 0.05 0.05 0.05 0.05 V V VOH Output Voltage High Level VNL Noise Immunity (All Inputs) VNH Noise Immunity (All Inputs) IDN VDD e 5.0V, VI e VDD, IO e 0A VDD e 10V, VI e VDD, IO e 0A VDD e 5.0V, VI e VSS, IO e 0A VDD e 10V, VI e VSS, IO e 0A 4.95 9.95 4.95 9.95 5.0 10 4.95 9.95 V V VDD e 5.0V, VO t 3.6V, IO e 0A VDD e 10V, VO t 7.2V, IO e 0A VDD e 5.0V, VO s 0.95V, IO e 0A VDD e 10V, VO s 2.9V, IO e 0A 1.5 3.0 1.5 3.0 2.25 4.5 1.4 2.9 V V 1.4 2.9 1.5 3.0 2.25 4.5 1.5 3.0 V V Output Drive Current N-Channel (4002) (Note 2) VDD e 5.0V, VO e 0.4V, VI e VDD VDD e 10V, VO e 0.5V, VI e VDD 0.35 0.72 0.3 0.6 1.0 2.5 0.24 0.48 mA mA IDN Output Drive Current N-Channel (4012) (Note 2) VDD e 5.0V, VO e 0.4V, VI e VDD VDD e 10V, VO e 0.5V, VI e VDD 0.145 0.3 0.12 0.25 0.5 0.6 0.095 0.2 mA mA IDP Output Drive Current P-Channel (4002) (Note 2) VDD e 5.0V, VO e 2.5V, VI e VSS VDD e 10V, VO e 9.5V, VI e VSS b 0.35 b 0.3 b 0.3 b 0.25 b 2.0 b 1.0 b 0.24 b 0.2 mA mA IDP Output Drive Current P-Channel (4012) (Note 2) VDD e 5.0V, VO e 2.5V, VI e VSS VDD e 10V, VO e 9.5V, VI e VSS b 0.145 b 0.35 b 0.12 b 0.3 b 0.5 b 1.2 b 0.095 b 0.24 mA mA II Input Current 10 pA Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’ they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device operation. Note 2: IDN and IDP are tested one output at a time. 3 AC Electrical Characteristics* TA e 25§ C, CL e 15 pF, and input rise and fall times e 20 ns. Typical temperature coefficient for all values of VDD e 0.3%/§ C. Symbol Parameter Conditions tPHL Propagation Delay Time High to Low Level tPLH Min Typ Max Units VDD e 5.0V VDD e 10V 35 25 50 40 ns ns Propagation Delay Time Low to High Level VDD e 5.0V VDD e 10V 35 25 50 40 ns ns tTHL Transition Time High to Low Level VDD e 5.0V VDD e 10V 65 35 175 75 ns ns tTLH Transition Time Low to High Level VDD e 5.0V VDD e 10V 65 35 125 70 ns ns CIN Input Capacitance Any Input 5.0 tPHL Propagation Delay Time High to Low Level VDD e 5.0V VDD e 10V 35 25 120 65 ns ns TPLH Propagation Delay Time Low to High Level VDD e 5.0V VDD e 10V 35 25 80 55 ns ns tTHL Transition Time High to Low Level VDD e 5.0V VDD e 10V 65 35 300 125 ns ns tTLH Transition Time Low to High Level VDD e 5.0V VDD e 10V 65 35 200 115 ns ns CIN Input Capacitance Any Input 5.0 CD4002M pF CD4002C pF *AC Parameters are guaranteed by DC correlated testing. AC Electrical Characteristics* TA e 25§ C, CL e 15 pF, and input rise and fall times e 20 ns. Typical temperature coefficient for all values of VDD e 0.3%/§ C. Symbol Parameter Conditions tPHL Propagation Delay Time High to Low Level tPLH Min Typ Max Units VDD e 5.0V VDD e 10V 50 25 75 40 ns ns Propagation Delay Time Low to High Level VDD e 5.0V VDD e 10V 50 25 75 40 ns ns tTHL Transition Time High to Low Level VDD e 5.0V VDD e 10V 75 50 125 75 ns ns tTLH Transition Time Low to High Level VDD e 5.0V VDD e 10V 75 40 100 60 ns ns CIN Input Capacitance Any Input 5.0 tPHL Propagation Delay Time High to Low Level VDD e 5.0V VDD e 10V 50 25 100 50 ns ns TPLH Propagation Delay Time Low to High Level VDD e 5.0V VDD e 10V 50 25 100 50 ns ns tTHL Transition Time High to Low Level VDD e 5.0V VDD e 10V 75 50 150 100 ns ns tTLH Transition Time Low to High Level VDD e 5.0V VDD e 10V 75 40 125 75 ns ns CIN Input Capacitance Any Input 5.0 CD4012M pF CD4012C pF *AC Parameters are guaranteed by DC correlated testing. Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’ they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device operation. 4 Physical Dimensions inches (millimeters) Ceramic Dual-In-Line Package (J) Order Number CD4002MJ, CD4002CJ, CD4012MJ or CD4012CJ NS Package Number J14A 5 CD4002M/CD4002C Dual 4-Input NOR Gate CD4012M/CD4012C Dual 4-Input NAND Gate Physical Dimensions inches (millimeters) (Continued) Molded Dual-In-Line Package (N) Order Number CD4002MN, CD4002CN, CD4012MN or CD4012CN NS Package Number N14A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. 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