2N3798 2N3799 2N3798A 2N3799A SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3798, 2N3799 series devices are silicon PNP epitaxial planar transistors designed for low noise amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) 2N3798 2N3798A SYMBOL 2N3799 2N3799A Collector-Base Voltage VCBO 60 90 Collector-Emitter Voltage VCEO 60 90 Emitter-Base Voltage VEBO 5.0 Continuous Collector Current IC 50 Power Dissipation PD 360 Power Dissipation (TC=25°C) PD 1.2 Operating and Storage Junction Temperature TJ, Tstg -65 to +200 Thermal Resistance JA 0.49 Thermal Resistance JC 150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=50V 10 ICBO VCB=50V, TA=150°C 10 IEBO VEB=4.0V 20 BVCBO IC=10μA (2N3798, 2N3799) 60 BVCBO IC=10μA (2N3798A, 2N3799A) 90 BVCEO IC=10mA (2N3798, 2N3799) 60 BVCEO IC=10mA (2N3798A, 2N3799A) 90 BVEBO IE=10μA 5.0 VCE(SAT) IC=100μA, IB=10μA 0.20 VCE(SAT) IC=1.0mA, IB=100μA 0.25 VBE(SAT) IC=100μA, IB=10μA 0.70 VBE(SAT) IC=1.0mA, IB=100μA 0.80 VBE(ON) VCE=5.0V, IC=100μA 0.70 2N3798 2N3799 2N3798A 2N3799A MIN MAX MIN MAX hFE VCE=5.0V, IC=1.0μA 75 hFE VCE=5.0V, IC=10μA 100 225 hFE VCE=5.0V, IC=100μA 150 300 hFE VCE=5.0V, IC=100μA, TA=-55°C 75 150 hFE VCE=5.0V, IC=500μA 150 450 300 900 hFE VCE=5.0V, IC=1.0mA 150 300 hFE VCE=5.0V, IC=10mA 125 250 - UNITS V V V mA mW W °C °C/mW °C/W UNITS nA μA nA V V V V V V V V V V R1 (22-September 2014) 2N3798 2N3799 2N3798A 2N3799A SILICON PNP TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) 2N3798 2N3799 2N3798A 2N3799A SYMBOL TEST CONDITIONS MIN TYP MAX MIN TYP MAX fT VCE=5.0V, IC=500μA, f=30MHz 30 30 fT* VCE=5.0V, IC=1.0mA, f=100MHz 80 80 Cob* VCB=5.0V, IE=0, f=100kHz 5.0 5.0 Cib* VEB=0.5V, IC=0, f=100kHz 15 15 hie VCE=10V, IC=1.0mA, f=1.0kHz 3.0 15 10 40 hre VCE=10V, IC=1.0mA, f=1.0kHz 25 25 hfe VCE=10V, IC=1.0mA, f=1.0kHz 150 600 300 900 hoe VCE=10V, IC=1.0mA, f=1.0kHz 5.0 60 5.0 60 NF VCE=10V, IC=100μA, RG=3.0kΩ, f=100Hz, BW=20Hz 4.0 7.0 2.5 4.0 NF VCE=10V, IC=100μA, RG=3.0kΩ, f=1.0kHz, BW=200Hz 1.5 3.0 0.8 1.5 NF VCE=10V, IC=100μA, RG=3.0kΩ, f=10kHz, BW=2.0kHz 1.0 2.5 0.8 1.5 NF VCE=10V, IC=100μA, RG=3.0kΩ, Broadband BW=10Hz to 15.7kHz 2.5 3.5 1.5 2.5 UNITS MHz MHz pF pF kΩ x10-4 μS dB dB dB dB * Limits not in accordance with JEDEC registered values. TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (22-September 2014) w w w. c e n t r a l s e m i . c o m